Tsung-Yi Tang

National Taiwan University

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C. C. Yang

University of Science and Technology of China

Chi‐Feng Huang

Institute of Physics, Academia Sinica

Jeng-Jie Huang

China Earthquake Administration

Yen-Cheng Lu

Feng Chia University

Wen-Yu Shiao

National Taipei University of Technology

Kun‐Ching Shen

Fuzhou University

Dong-Ming Yeh

National Taiwan University

Cheng‐Yen Chen

National Yang Ming Chiao Tung University

Kung‐Jen Ma

Chung Hua University

Hsiang‐Chen Wang

National Chung Cheng University

Cooperative Institutions

National Taiwan University

Institute of Electronics

National Yang Ming Chiao Tung University

National Tsing Hua University

National Chung Cheng University

National Cheng Kung University

National Defense University

Taipei Veterans General Hospital

National Sun Yat-sen University

Institute of Physics, Academia Sinica

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Coalescence overgrowth of GaN nanocolumns

International Nano-Optoelectronics Workshop (2008)

Tsung-Yi Tang Wen-Yu Shiao Yung‐Sheng Chen Kent L. Averett John D. Albrecht

Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.

Coalescence (physics)

Crystal (programming language)

10.1109/inow.2008.4634477

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Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?

2007 Conference on Lasers and Electro-Optics (CLEO) (2007)

C. C. Yang Chi‐Feng Huang Dong-Ming Yeh Cheng-Yen Chen Chih-Feng Lu

We report some recent developments in all-semiconductor multi-color and white-light light-emitting diodes. The potential of the development of phosphor-free all-InGaN/GaN quantum-well white-light light-emitting diode will be evaluated.

Indium gallium nitride

Wide-bandgap semiconductor

10.1109/cleo.2007.4453761

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Enhanced photoluminescence excitation in surface plasmon coupling with an InGaN∕GaN quantum well

Applied Physics Letters (2007)

Yen-Cheng Lu Cheng‐Yen Chen Kun‐Ching Shen Dong-Ming Yeh Tsung-Yi Tang

The authors report the observation of the enhancement of photoluminescence excitation through the couplings of an InGaN∕GaN quantum well (QW) with localized surface plasmons (LSPs) and surface plasmon polaritons (SPPs), which are generated on a Ag nanostructure deposited on the SiN-coated QW epitaxial sample. At the wavelengths corresponding to the LSP modes, the excitation light is first absorbed by the LSPs. The LSP energy is then transferred into the QW such that the effective QW absorption is enhanced. Meanwhile, the application of the LSP local field to the QW may increase its absorption coefficient. Then, the coupling of the relaxed carriers with the SPPs enhances light emission that becomes stronger as temperature increases because of the increased carrier momentum.

Localized surface plasmon

Photoluminescence excitation

Wide-bandgap semiconductor

10.1063/1.2805034

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Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures

Tsung-Yi Tang Chih-Chung Teng Shih-Chun Lin En-Chiang Lin Meng‐Ku Chen

Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains.

10.1109/cleopr.2003.1277164

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Comparison of nanostructure characteristics of ZnO grown on GaN and sapphire

Journal of Applied Physics (2006)

Wen-Yu Shiao Chun-Yung Chi Shu-Cheng Chin Chi‐Feng Huang Tsung-Yi Tang

The immature developments of p-type ZnO and ZnO-related ternary or quaternary compound and the small lattice mismatch between ZnO and GaN stimulate interest in the hybrid growth of ZnO and GaN. In this research, we compared the nanostructures and optical properties of two ZnO thin-film samples grown under the same conditions but on different underlying materials (sapphire and GaN). With the high growth temperature of 450°C, both samples show domain structures. However, in contrast to the sample of ZnO on sapphire, the sample of ZnO on GaN starts with smaller domains (a few tens of nanometers in width) of almost vertical boundaries at the interface and evolves into larger domains (around 100nm in width). The 30° twist of the basal plane in ZnO with respect to its underlying sapphire does not occur in the sample of ZnO on GaN. Within a domain of ZnO on sapphire, misfit and threading dislocations can be periodically observed along the interface with the separation of about 8nm. The transition of the lattice structure across the interface between ZnO and GaN was quite smooth, indicating the high heterojunction quality in this sample. The x-ray diffraction results showed that the crystalline quality of ZnO on GaN is slightly better than that of ZnO on sapphire. However, based on the thermal quenching behavior of integrated photoluminescence intensity, we estimated that the optical quality of the two samples is about the same.

Wide-bandgap semiconductor

10.1063/1.2174121

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X-ray diffraction study on an InGaN∕GaN quantum-well structure of prestrained growth

Journal of Applied Physics (2007)

Wen-Yu Shiao Chi‐Feng Huang Tsung-Yi Tang Jeng‐Jie Huang Yen-Cheng Lu

We compare the x-ray diffraction (XRD) results of two InGaN∕GaN quantum-well (QW) structures to observe the effects of prestrained growth by depositing a low-indium QW before the growth of five high-indium QWs. From the results of reciprocal space mapping, we observe the fully strained condition in the QWs of the control sample. However, in the sample of prestrained growth, the average strain is partially relaxed. By using an XRD fitting algorithm for calibrating QW parameters, we obtain reasonable values for the compositions and thicknesses of the QWs in both samples. In particular, by assuming a nonuniform strain relaxation distribution among the five high-indium QWs in the prestrained sample, we obtain reasonable composition variations among the QWs. The high-indium QW closest to the low-indium one is most strain-relaxed and has the highest indium incorporation, leading to the longest-wavelength emission. The observed red shift with increasing electron penetration depth in the cathodo-luminescence spectra of the prestrained sample is consistent with the distributions of calibrated strain relaxation and indium composition. The results of high-resolution transmission electron microscopy and effective band gap calculation also agree with the above conclusions.

Stress relaxation

10.1063/1.2736860

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Control of the color contrast of a polychromatic light-emitting device with CdSe-ZnS nano-crystals on an InGaN-GaN quantum-well structure

IEEE Photonics Technology Letters (2006)

Dong-Ming Yeh Chi‐Feng Huang Horng-Shyang Chen Tsung-Yi Tang Chih-Feng Lu

Blue-red polychromatic light-emitting devices are fabricated by attaching red-emitting CdSe-ZnS nano-crystals on a blue-emitting InGaN-GaN multiple-quantum-well (MQW) structure. To improve the red/blue intensity contrast, holes of different diameters are fabricated for increasing the direct contact area between the MQW active regions and CdSe-ZnS nano-crystals. By comparing the devices of 10-, 50-, 60-, and 70-mum hole diameters, and a reference device of no hole, it is found that the hole diameter of 60 mum represents an optimized condition from the viewpoint of maintaining high quantum efficiency. However, the device of 10-mum holes has the highest red/blue intensity ratio, which corresponds to a 36% increase. This result is attributed to its largest side-wall area in the holes among various samples

Contrast ratio

Blueshift

Quantum Efficiency

10.1109/lpt.2006.870056

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Spiral Deposition with Alternating Indium Composition in Growing an InGaN Nanoneedle with the Vapor-Liquid-Solid Growth Mode

Journal of Nanomaterials (2012)

Wen-Ming Chang Che‐Hao Liao Chih‐Yen Chen Chieh Hsieh Tsung-Yi Tang

The spiral deposition of InGaN with a quasiperiodical distribution of indium content along the growth direction for forming InGaN nanoneedles (NNs) with the vapor‐liquid‐solid (VLS) growth mode is demonstrated. The VLS growth is implemented by using Au nanoparticles (NPs) as the catalyst in metalorganic chemical vapor deposition. The Au NPs on a GaN template are generated through pulsed laser irradiation. The observation of spiral deposition is based on the analyses of the scanning results in the high angle annular dark field and energy dispersive X‐ray measurements of transmission electron microscopy. In the measurements, the composition variations along and perpendicular to the growth direction (the c ‐axis) are illustrated. The alternating indium content along the growth direction is attributed to a quasiperiodically pulsed behavior of indium supersaturation process in the melted Au NP at the top of an InGaN NN. The spiral deposition of InGaN is due to the formation of an NN at the location of an Au NP with a screw‐type dislocation beneath in the GaN template, at which the growth of a quasi‐one‐dimensional structure can be easily initiated.

Nanoneedle

Deposition

10.1155/2012/653195

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Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN∕GaN quantum wells

Applied Physics Letters (2007)

Chi‐Feng Huang Chih-Feng Lu Tsung-Yi Tang Jeng-Jie Huang C. C. Yang

The authors grew a white-light InGaN∕GaN quantum-well (QW) light-emitting diode epitaxial structure with its electroluminescence spectrum close to the ideal condition in the Commission International de l’Eclairage chromaticity based on the prestrained metal-organic chemical vapor deposition technique. The prestrained growth leads to the efficient yellow emission from three InGaN∕GaN QWs of increased indium incorporation. The color mixing for white light is implemented by adding a blue-emitting QW at the top of the yellow-emitting QWs. The blueshifts of the blue and yellow spectral peaks of the generated electroluminescence spectra are only 1.67 and 8nm, respectively, when the injection current increases from 10to70mA. Such small blueshifts imply that the piezoelectric fields in their QWs are significantly weaker than those previously reported.

Chromaticity

Wide-bandgap semiconductor

10.1063/1.2723197

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Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing

Journal of Applied Physics (2004)

Shih‐Wei Feng Tsung-Yi Tang Yen-Cheng Lu Shi-Jiun Liu En‐Chiang Lin

We study thermal annealing effects on the size and composition variations of indium-aggregated clusters in two InGaN thin films with photoluminescence (PL) in the yellow and red ranges. The methods of investigation include optical measurement, nanoscale material analysis, and theoretical calculation. Such a study is important for determining the relation between the band gap and the average indium content of InGaN. In one of the samples, the major part of the PL spectrum is shifted from the yellow band into the blue range upon thermal annealing. In the other sample, after thermal annealing, a broad spectrum covering the whole visible range is observed. Cathodo-luminescence (CL) spectra show that the spectral changes occur essentially in the photons emitted from the shallow layers of the InGaN films. Photon emission spectra from the deeper layers are essentially unaffected by thermal annealing. The spectral changes upon thermal annealing are mainly attributed to the general trend of cluster size reduction. This interpretation is supported by the CL, x-ray diffraction, and high-resolution transmission electron microscopy results. To obtain a basic physics picture behind the spectral blue shift upon thermal annealing in the yellow emission sample, we theoretically study the quantum-confinement effects of InGaN clusters based on a quantum box model. The theoretical results can generally explain the large blue shift of PL spectral peak position.

Blueshift

10.1063/1.1703828

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Citations (39)