G. Kaindl

Freie Universität Berlin

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M. Domke

Freie Universität Berlin

C. Laubschat

TU Dresden

E. Weschke

Helmholtz-Zentrum Berlin für Materialien und Energie

K. Starke

Laser Zentrum Hannover

Zhiwei Hu

Max Planck Institute for Chemical Physics of Solids

G. Wortmann

Paderborn University

R. Püttner

Freie Universität Berlin

M. Prietsch

Freie Universität Berlin

A. Bauer

Technical University of Munich

C. Schüßler-Langeheine

Helmholtz-Zentrum Berlin für Materialien und Energie

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Freie Universität Berlin

148

Lawrence Berkeley National Laboratory

Centre National de la Recherche Scientifique

University of California, Berkeley

Max Planck Society

Fritz Haber Institute of the Max Planck Society

Leibniz Institute for Solid State and Materials Research

Leibniz Institute for Neurobiology

The University of Tokyo

TU Dresden

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Finite-Size Effect on Magnetic Ordering Temperatures in Long-Period Antiferromagnets: Holmium Thin Films

Physical Review Letters (2004)

E. Weschke Holger Ott E. Schierle C. Schüßler-Langeheine D. V. Vyalikh

The thickness dependence of the helical antiferromagnetic ordering temperature T(N) was studied for thin Ho metal films by resonant magnetic soft x-ray and neutron diffraction. In contrast with the Curie temperature of ferromagnets, T(N) was found to decrease with film thickness d according to [T(N)(infinity)-T(N)(d)]/T(N)(d) proportional variant (d-d(0))(-lambda(')), where lambda(') is a phenomenological exponent and d(0) is of the order of the bulk magnetic period L(b). These observations are reproduced by mean-field calculations that suggest a linear relationship between d(0) and L(b) in long-period antiferromagnets.

Holmium

Exponent

10.1103/physrevlett.93.157204

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Citations (90)

Resonant magnetic X-ray scattering from ultrathin Ho–metal films down to a few atomic layers

Journal of Electron Spectroscopy and Related Phenomena (2001)

C. Schüßler-Langeheine E. Weschke A. Yu. Grigoriev Holger Ott Robert J. Meier

Magnetic structure

10.1016/s0368-2048(00)00318-2

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Citations (25)

Spin-dependent surface band structure of hcpCo(101¯0)

Physical review. B, Condensed matter (1999)

Sven Bode K. Starke G. Kaindl

We report on a detailed analysis of the unoccupied spin-dependent surface band structure of hcp-Co$(10\overline{1}0)$ using inverse photoemission with longitudinally spin-polarized electrons. At the boundary of the surface Brillouin zone $\overline{Y}$, an $n=1$ image-potential state is observed, which is split by 0.6 eV into an antisymmetric ${n=1}^{\ensuremath{-}}$ and a symmetric ${n=1}^{+}$ state, reflecting the high corrugation in front of the ``open'' hcp $(10\overline{1}0)$ surface. The upper ${n=1}^{+}$ state is nearly dispersionless in contrast to earlier predictions. Majority and minority crystal-induced surface bands, exchange split by 0.5 eV due to appreciable $\mathrm{sd}$ hybridization at the ${L}_{1}$ point of the unoccupied hcp Co band structure, exhibit almost equal effective masses.

Brillouin zone

Antisymmetric relation

10.1103/physrevb.60.2946

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Citations (3)

X-ray absorption near-edge structure at the LI–III thresholds of Pr, Nd, Sm, and Dy compounds with unusual valences

Journal of Alloys and Compounds (1997)

Zhiwei Hu G. Kaindl Gerd Meyer

XANES

Electronegativity

Divalent

Absorption edge

10.1016/s0925-8388(96)02473-5

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Citations (55)

Unreliability of the autocorrelation function as evidence for Ericson fluctuations

Physical Review A (2011)

Yuhai Jiang R. Püttner Dominique Delande M. Martins G. Kaindl

In a recent combined experimental and theoretical paper for the total photoionization cross section of helium up to the single-ionization threshold ${I}_{13}$, we had shown that Ericson fluctuations were absent, although the Ericson regime had already been reached. In the present paper, we study the autocorrelation functions of the total photoionization cross section below ${I}_{9}\text{--}{I}_{13}$ and find that these are essentially identical to that of an artificial spectrum with Ericson fluctuations. Consequently, we have to conclude that the autocorrelation function alone---although its Lorentzian-like shape for small displacements $\ensuremath{\varepsilon}$ has been used by some authors---is a necessary but is not a sufficient proof for the existence of Ericson fluctuations. In the present case of He, the absence of Ericson fluctuations is a consequence of a strong hierarchy between the transitions belonging to different series with approximate quantum numbers that still exist in this region; this causes the spectra to be dominated by the principal series.

10.1103/physreva.84.023402

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Citations (2)

Initial stages of MgO/Si and Si/MgO interface formation

Surface Science (1992)

A. M. Shikin G. V. Prudnikova V. K. Adamchuk С. Л. Молодцов A. Gutiérrez

Auger electron spectroscopy

10.1016/0039-6028(92)91393-p

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Citations (4)

Valence electron distribution in La Li Cu O

Zhiwei Hu Chandan Mazumdar G. Kaindl D. Reinen

The distribution of valence electrons between transition metals TM and oxygen has been studied via X-ray absorption .

Source

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High Resolution Photoabsorption Near the Sulfur L{sub 2,3} Thresholds: H{sub 2}S and D{sub 2}S

Eric Hudson D. A. Shirley M. Domke G. Remmers G. Kaindl

Source

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Citations (0)

An UHV-spectrometer for conversion electron Mossbauer spectroscopy

Hyperfine Interactions (1981)

M. Domke B. Kyvelos G. Kaindl

Electron spectrometer

10.1007/bf01022065

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Citations (17)

Surface photovoltage at Cs/GaAs(110): Photoemission experiments and theoretical modeling

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (1991)

and R. S. Bauer M. Prietsch С. Л. Молодцов C. Laubschat G. Kaindl

The effects of a surface photovoltage on band bending were investigated with photoemission for interfaces of thin Cs films with p-type GaAs(110) as a function of substrate dopant concentration n and temperature T. Theoretical calculations, which consider recombination by both thermionic emission and tunneling, were found to be in excellent agreement with experimental data. As a result, surface photovoltages are found to contribute only for low dopant concentrations and at low temperatures, with limits depending on the Schottky-barrier height, ΦB : n<1×1018/cm3 and T<280 K for ΦB=0.7 eV, and n<1.5×1018/cm3 and T<390 K for ΦB=1.0 eV. At high coverages (Θ>2.5 ML), the surface photovoltage is strongly reduced due to edge-leakage currents. Finally, general predictions for the occurrence and magnitude of a surface photovoltage will be given, and recent data will be critically reviewed.

Surface Photovoltage

Thermionic emission

Band bending

10.1116/1.585747

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Citations (15)