Dong-Ming Yeh

National Taiwan University

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C. C. Yang

University of Science and Technology of China

Chi‐Feng Huang

Institute of Physics, Academia Sinica

Wen-Yu Shiao

National Taiwan University

Wei‐Fang Su

National Taiwan University

Horng-Shyang Chen

National Taiwan University

Chih-Feng Lu

National Taiwan University

I.-S. Liu

University of California, Santa Barbara

Chi-Feng Huang

National Yang Ming Chiao Tung University

Jun‐Yu Huang

Changchun University of Science and Technology

Jian‐Jang Huang

National Taiwan University

Cooperative Institutions

National Taiwan University

National Chung Cheng University

National Yang Ming Chiao Tung University

National Cheng Kung University

Institute of Physics, Academia Sinica

University of Science and Technology of China

National Applied Research Laboratories

Wuhan University of Technology

Institute of Electronics

Centers for Disease Control and Prevention

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Light-emitting devices fabricated with CdSe nano-crystals coated on an InGaN/GaN quantum-well structure for polychromatic generation

Dong-Ming Yeh Chih‐Feng Lu Chi-Feng Huang Tsung-Yi Tang Horng-Shyang Chen

By coating CdSe nano-crystals on an InGaN/GaN quantum well structure, polychromatic LEDs emitting blue and red lights have been implemented. The blue photons emitted by the quantum well structure are absorbed by the CdSe nano-crystals for emitting red light. By fabricating holes on the quantum well structure for filling up the nano-crystal solution, the red emission efficiency can be improved.

Wide-bandgap semiconductor

Quantum Efficiency

Crystal (programming language)

10.1109/leos.2005.1547976

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Phosphor-free white-light light-emitting diodes based on InGaN/GaN quantum wells

Asia Optical Fiber Communication and Optoelectronics Conference (2007)

Chi‐Feng Huang Chih-Feng Lu Dong-Ming Yeh Yung‐Sheng Chen Wen-Yu Shiao

Two approaches for fabricating white-light light-emitting diodes are discussed, including the stacking of various InGaN/GaN quantum wells for mixing into white light and the use of ll-VI nano-crystals for converting short-wavelength photons into long-wavelength light.

Wide-bandgap semiconductor

Indium gallium nitride

10.1109/aoe.2007.4410804

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White light generation with CdSe-ZnS nanocrystals coated on an InGaN-GaN quantum-well blue/Green two-wavelength light-emitting diode

IEEE Photonics Technology Letters (2006)

Horng-Shyang Chen Dong-Ming Yeh Chih-Feng Lu Chi‐Feng Huang Wen-Yu Shiao

We grew and processed a blue/green two-wavelength light-emitting diode (LED) based on the mixture of two kinds of quantum wells (QW) in epitaxial growth. The X-ray diffraction and photoluminescence measurements indicated that the crystalline structure and the basic optical property of individual kinds of QW are not significantly changed in the mixed growth. The relative electroluminescence (EL) intensity of the two colors depends on the injection current level, which controls the hole concentration distribution among the QWs. At low injection levels, the top green-emitting QW dominates in EL. As the injection current increases, the blue-emitting QWs beneath become dominating. We also coated CdSe-ZnS nanocrystals on the top of the two-wavelength LED for converting blue photons into red light. With the coating of such nanocrystals, the device emits blue, green, and red lights for white light generation.

Green-light

Blueshift

Indium gallium nitride

10.1109/lpt.2006.877551

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Combination of Nitride Semiconductor Nanostructures and Nano-photonics for Efficient Solid-state Lighting

International Nano-Optoelectronics Workshop (2007)

C. C. Yang Chi‐Feng Huang Cheng‐Yen Chen Dong-Ming Yeh Tsung-Yi Tang

Nitride nanostructures and nano-photonics, including an MOCVD prestrained InGaN/GaN quantum well growth technique for orange and white LED fabrication and surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement, are reported.

Semiconductor nanostructures

Wide-bandgap semiconductor

Solid-State Lighting

Quantum Efficiency

10.1109/inow.2007.4302882

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Phosphor-free all-semiconductor white-light light-emitting devices

Chi‐Feng Huang Dong-Ming Yeh Chih-Feng Lu Horng-Shyang Chen Tsung-Yi Tang

Phosphor-free all-semiconductor white-light devices are fabricated by coating CdSe/ZnS nano-crystals on blue/green two-wavelength LEDs for converting blue photons into red light. The LEDs are implemented by stacking two different types of InGan/GaN quantum wells.

Green-light

Wide-bandgap semiconductor

Indium gallium nitride

10.1109/cleo.2006.4628177

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