S. Brision

Centre de Nanosciences et de Nanotechnologies

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Bertrand Szelag

CEA LETI

Daivid Fowler

CEA LETI

Christophe Kopp

CEA LETI

Quentin Wilmart

Université Grenoble Alpes

Stéphane Malhouitre

CEA LETI

A. Myko

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Stéphane Bernabé

Institut polytechnique de Grenoble

B. Blampey

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Jean-Marc Fédéli

Université Grenoble Alpes

Dries Van Thourhout

Ghent University Hospital

Cooperative Institutions

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

CEA LETI

CEA Grenoble

Université Grenoble Alpes

Institut polytechnique de Grenoble

Centre National de la Recherche Scientifique

STMicroelectronics (France)

Direction de la Recherche Technologique

III V Lab

Université Paris-Sud

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

European HELIOS project: Silicon photonic photodetector integration

Laurent Vivien Johann Osmond Delphine Marris‐Morini P. Crozat Éric Cassan

We report recent experimental results of two kinds of photodetectors developed in the framework of the European project HELIOS: InAlAs-InGaAs metal-semiconductor-metal photodetectors and germanium photodetectors.

10.1109/group4.2009.5338308

Cite

Citations (9)

Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2010)

Badhise Ben Bakir Nicolas Olivier Ph. Grosse S. Messaoudène S. Brision

We report the first Silicon/III-V evanescent laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100nm-thick SiO₂ layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain, and the bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBR), and a surface-grating coupler. The supermode of this hybrid structure is controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the devices, almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side mode suppression ratio is as high as 20dB, and the fiber-coupled output power is ~7mW.

Waveguide

Transverse mode

10.1117/12.858889

Cite

Citations (14)

SiN Integrated Photonics Platform for Near-Infrared Range Applications

Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (2018)

Nicola A. Tyler Daivid Fowler S. Malhouitre S. Brision Olivier Lemonnier

10.7567/ssdm.2018.h-4-02

Cite

Citations (0)

High efficiency diffractive grating couplers for interfacing a single mode optical fiber with a nanophotonic silicon-on-insulator waveguide circuit

Applied Physics Letters (2008)

Günther Roelkens Diedrik Vermeulen Dries Van Thourhout Roel Baets S. Brision

High efficiency diffractive grating structures to interface a single mode optical fiber and a nanophotonic integrated circuit fabricated on silicon-on-insulator are presented. The diffractive grating structures are designed to be inherently very directional by adding a silicon overlay before grating definition. 55% coupling efficiency at a wavelength of 1.53μm is experimentally demonstrated on devices fabricated using standard complementary metal-oxide semiconductor technology. By optimizing the grating parameters, we theoretically show that 80% grating coupling efficiency can be obtained for a uniform grating structure.

Nanophotonics

Waveguide

Diffraction efficiency

10.1063/1.2905260

Cite

Citations (166)

Advanced Si photonics platform for high-speed and energy-efficient optical transceivers for datacom

Quentin Wilmart Thomas S. Mang Daivid Fowler S. Brision Karen Ribaud

A mature silicon photonics platform including various materials for a wide range of functionalities is needed to achieve high-speed and energy-efficient transceivers for Datacom. We present the latest developments of our 200mm silicon photonics platform including new devices in silicon nitride along with active devices. In particular, we demonstrate a high performance SiN Echelle Grating CWDM (de-)multiplexer obtained with advanced photolithography tools, hybrid Si-SiN polarization splitter rotator, SiN edge coupler and low-loss, low-crosstalk Si-SiN and SiN-SiN crossings.

Transceiver

10.1117/12.2543748

Cite

Citations (4)

Ultra-low power 256 channels optical phased-array based on low-doped carrier-depletion modulators

Louise-Eugénie Bataille Cyrille Barrera Sylvain Guerber S. Monfray Philippe Grosse

We report a 256 channels 1D optical phased-array (OPA) based on plasma-dispersion effect. This system exhibits ultra-low power consumption (~1mW) revealing the potential of carrier-depletion scheme at low doping dose for solid-state LiDARs applications.

Phased-array optics

Ultra low power

10.1364/cleo_si.2023.sf1p.2

Cite

Citations (1)

10 Gb/s Integrated Tunable Hybrid III-V/Si Laser and Silicon Mach-Zehnder Modulator

G.-H. Duan Christophe Jany A. Le Liepvre J.-G. Provost D. Maké

We demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Extinction ratio

Electro-optic modulator

Modulation (music)

10.1364/eceoc.2012.tu.4.e.2

Cite

Citations (31)

Novel cost effective butt-coupled PIN germanium photodetector integrated in a 200mm silicon photonic platform

Bertrand Szelag Léopold Virot Stéphane Malhouitre B. Blampey S. Brision

Silicon photonics is becoming a technology of choice for optical communications. Compatibility with cmos manufacturing process is one key of success since it allows taking advantage of the production capacities of foundries; i.e. big volume and low cost manufacturability [1]. Germanium is the ideal candidate to build the integrated high performance photodiodes needed for receiver circuits [2]. Meanwhile, pure Ge epitaxy is not common in cmos processes and its integration within a silicon platform is not straightforward. In particular, germanium is very sensitive to wet etch processes. Post Ge-epitaxy dopant activation is also difficult due to thermal budget limitations. In this work, we propose a novel photodetector architecture which is integrated in a silicon photonic platform in a cost effective and robust manner.

Photodiode

10.1109/group4.2016.7739095

Cite

Citations (2)

Heterogeneous and multi-level integration on mature 25Gb/s silicon photonic platform

Stéphane Malhouitre Bertrand Szelag S. Brision Quentin Wilmart Daivid Fowler

A Full 25GB/S silicon photonics platform is described in this paper, and new technological challenges that aim to improve this platform, such as multiple silicon levels, silicon nitride levels, edge coupling processing or integration of heterogeneous materials to enable tunable integrated lasers, are discussed.

Hybrid silicon laser

Integration platform

Microphotonics

10.1109/icsj.2017.8240122

Cite

Citations (3)

Progresses in 300mm DUV photolithography for the development of advanced silicon photonic devices

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2015)

Charles Baudot Bertrand Szelag N. Allouti Corinne Comboroure Sébastien Bérard-Bergery

In this paper we report on advances in DUV dry photolithography both for etching and implantation of silicon photonic devices. We explain why silicon patterning is a critical building block in silicon photonics and what are the challenges related to that process. Furthermore, it also occurs that some silicon photonic devices need implantation lithographic conditions which are also specific to the technology. For that purpose, we developed a dedicated DUV 193nm implantation lithography to address that need.

Dry etching

Computational lithography

Hybrid silicon laser

10.1117/12.2085800

Cite

Citations (1)