S. Dubail

AXON Neuroscience (Slovakia)

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J. Meier

Philipps University of Marburg

U. Kroll

University of Kassel

D. Fischer

Von Ardenne (Germany)

A. Shah

Lurie Children's Hospital

H. Keppner

HES-SO University of Applied Sciences and Arts Western Switzerland

R. Platz

University of Neuchâtel

P. Torres

Instituto Geográfico Nacional

Thierry Douillard

Matériaux Ingénierie et Science

J. A. Anna Selvan

Princeton University

Cyril Langlois

Institut National des Sciences Appliquées de Lyon

Cooperative Institutions

University of Neuchâtel

École Polytechnique Fédérale de Lausanne

Centre National de la Recherche Scientifique

Matériaux Ingénierie et Science

Université Claude Bernard Lyon 1

Institut National des Sciences Appliquées de Lyon

Swiss Center for Electronics and Microtechnology (Switzerland)

Forschungszentrum Jülich

Oerlikon (Switzerland)

Université Paris Sciences et Lettres

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Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-GD technique

Solar Energy Materials and Solar Cells (2001)

J. Meier E. Vallat‐Sauvain S. Dubail U. Kroll J. Dubail

Microcrystalline

Open-circuit voltage

Tandem

10.1016/s0927-0248(00)00160-4

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Citations (124)

The “Micromorph” cell: a new way to high-efficiency-low-temperature crystalline silicon thin-film cell manufacturing?

AIP conference proceedings (1997)

H. Keppner U. Kroll P. Torres J. Meier R. Platz

Hydrogenated microcrystalline Silicon (μc-Si:H) produced by the VHF-GD (Very High Frequency Glow Discharge) process can be considered to be a new base material for thin-film crystalline silicon solar cells. The most striking feature of such cells, in contrast to conventional amorphous silicon technology, is their stability under light-soaking. With respect to crystalline silicon technology, their most striking advantage is their low process temperature (220 °C). The so called “micromorph” cell contains such a μc-Si:H based cell as bottom cell, whereas the top-cell consists of amorphous silicon. A stable efficiency of 10.7% (confirmed by ISE Freiburg) is reported in this paper. At present, all solar cell concepts based on thin-film crystalline silicon have a common problem to overcome: namely, too long manufacturing times. In order to help in solving this problem for the particular case of plasma-deposited μc-Si:H, results on combined argon/hydrogen dilution of the feedgas (silane) are presented. It is shown that rates as high as 9.4 Å/s can be obtained: furthermore, a first solar cell deposited with 8.7 Å/s resulted in an efficiency of 3.1%.

Nanocrystalline silicon

Microcrystalline

10.1063/1.52847

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Citations (4)

Recent progress in micromorph solar cells

Journal of Non-Crystalline Solids (1998)

J. Meier S. Dubail J. Cuperus U. Kroll R. Platz

Microcrystalline

Microcrystalline silicon

Tandem

Open-circuit voltage

Nanocrystalline silicon

10.1016/s0022-3093(98)00352-4

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Citations (109)

The "Micromorph" Solar Cells: a New Way to High Efficiency Thin Film Silicon Solar Cells

J. Meier S. Dubail D. Fischer J. A. Anna Selvan N. Pellaton Vaucher

Note: IMT-NE Number: 207 Reference PV-LAB-CONF-1995-004 Record created on 2009-02-10, modified on 2017-05-10

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Citations (9)

CHORD: When Ion or Electron Channeling meets Crystal Orientation Mapping

HAL (Le Centre pour la Communication Scientifique Directe) (2019)

Cyril Langlois Clément Lafond Thierry Douillard Sophie Cazottes S. Dubail

Chord (peer-to-peer)

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Citations (0)

The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon

D. Fischer S. Dubail J. A. Anna Selvan N. Pellaton Vaucher R. Platz

Progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (/spl mu/c-Si:H), as well as on combined a-Si:H//spl mu/c-Si:H stacked "micromorph" solar cells is reported. /spl mu/c-Si:H p-i-n cells with a thickness of 3.6 /spl mu/m, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mA/cm/sup 2/, and a stable efficiency of 7.7%. a-Si:H//spl mu/c-Si:H tandem cells with 13% initial, and with 10% degraded state efficiency are also demonstrated. In addition, methods to further increase the efficiency of combined a-Si:H//spl mu/c-Si:H solar cells are discussed. This includes the introduction of a ZnO reflector layer between a-Si:H and /spl mu/c-Si:H component cells, a new concept of which first experimental results are given.

Microcrystalline

10.1109/pvsc.1996.564311

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Citations (82)

Procede et systeme pour la generation d'un profil d'intensites theorique d'un materiau monocristallin d'orientation cristalline connue

HAL (Le Centre pour la Communication Scientifique Directe) (2017)

Cyril Langlois Thierry Douillard S. Dubail

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High Efficiency p-i-n Solar Cells with Deposited by the Hot-Wire Technique

Photovoltaic Specialists Conference (1997)

Y. Ziegler S. Dubail Ch. Hof U. Kroll Abdul Hakim Shah

Note: IMT-NE Number: 262 Reference PV-LAB-CONF-1997-024 Record created on 2009-02-10, modified on 2017-05-10

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High frequency p-i-n solar cells with [intrinsic] layer deposited by hot-wire technique

Y. Ziegler S. Dubail C. Hof U. Kroll Akash Shah

More stable amorphous silicon (a-Si:H) material obtained with the Hot-Wire technique requires high substrate temperatures (T{sub sub} > 300 C) and low gas pressures (p{sub dep} {approx} 10{sup {minus}2} mbar). The second condition implies that heat transfer between the heater and the substrate is mainly dominated by thermal radiation; therefore, T{sub sub} is strongly affected by the emissivity {epsilon}{sub surf} of the growth surface. Here, it will be shown experimentally that {epsilon}{sub surf} depends on the thickness of the growing a-Si:H layer; a significant variation in {epsilon}{sub surf} during the deposition of the first 3000{angstrom} has been observed. With the help of a new heating concept, the authors integrated an intrinsic layer deposited at constant T{sub sub} = 270 C into a p-i-n solar cells with initial efficiency of 8.7%.

Deposition

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Angular resolution expected from iCHORD orientation maps through a revisited ion channeling model

Ultramicroscopy (2019)

Cyril Langlois Thierry Douillard S. Dubail Clément Lafond Sophie Cazottes

Sample (material)

Characterization

10.1016/j.ultramic.2019.03.007

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Citations (1)