David S. Albin

National Renewable Energy Laboratory

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Helio Moutinho

National Renewable Energy Laboratory

R. G. Dhere

National Renewable Energy Laboratory

Mowafak Al‐Jassim

National Renewable Energy Laboratory

R. Noufi

National Renewable Energy Laboratory

Wyatt K. Metzger

National Renewable Energy Laboratory

Darius Kuciauskas

National Renewable Energy Laboratory

John R. Tuttle

Carilion Clinic

Dean H. Levi

National Renewable Energy Laboratory

Matthew O. Reese

National Renewable Energy Laboratory

Marco Nardone

National Renewable Energy Laboratory

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National Renewable Energy Laboratory

168

Colorado School of Mines

National Technical Information Service

First Solar (United States)

Office of Scientific and Technical Information

Colorado State University

Arizona State University

University of Toledo

Bowling Green State University

University of Colorado Boulder

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Metastable electrical characteristics of polycrystalline thin-film photovoltaic modules upon exposure and stabilization

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2011)

Chris Deline Joseph A. del Cueto David S. Albin S. Rummel

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65°C; exposed in the dark under forward bias at 65°C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Metastability

10.1117/12.893813

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Citations (3)

Numerical Analysis of Time Resolved Photoluminescence for Alumina/Cd(Se,Te) Double Heterostructures

Jordan R. Fox Darius Kuciauskas David S. Albin Marco Nardone

Al 2 O 3 has demonstrated excellent Cd(Se,Te) surface passivation. In this work, recombination mechanisms were investigated by comparing simulations of time resolved photoluminescence (TRPL) to PL decay data (320 ns effective lifetime) for Al 2 O 3 /Cd(Se,Te)/Al 2 O 3 double heterostructures. Models were employed to investigate the effects of bulk and surface recombination, electric fields, mobility, and doping by simulating intensity-dependent single- (1PE) and two-photon excitation (2PE) TRPL. 2PE simulations replicate decay behavior while 1PE simulations require attention to charge redistribution. Various coupled mechanisms cannot be distinguished from PL decay data alone. Complementary measurements are required to constrain the model parameters and isolate mechanisms.

Passivation

10.1109/pvsc43889.2021.9518978

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Electrical properties of CdTe/CdS AND CdTe/SnO2 solar cells studied with scanning kelvin probe microscopy

Helio Moutinho R. G. Dhere Chun‐Sheng Jiang David S. Albin Mowafak Al‐Jassim

We measured the distribution of the electric potential and electric field on cross sections of working CdTe/CdS solar cells using SKPM. We analyzed the cells biased at different voltages (reverse and forward bias) and were able to identify different regions inside the devices. On standard cells, the main potential drop was around the CdTe/CdS junction and there was some drop inside the CdTe. As we increased the reverse bias, the region of the CdTe with the potential drop became wider, showing the expansion of the depletion region. The maximum of the electric field, which locates the p-n junction, occurred at the apparent CdTe/CdS interface. However, there was a sharp peak in the electric field at this location, which was correlated to an interdiffusion layer between CdTe and CdS. Results for cells without the CdS film were similar, but the strong electric field at the junction was not present. In this case, the maximum of the electric field was located at the CdTe/SnO ₂ junction.

Cadmium telluride photovoltaics

Biasing

Depletion region

Voltage drop

Open-circuit voltage

10.1109/pvsc.2010.5616694

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Citations (1)

A Comparative Study of CdS Thin Films Grown by Chemical-Bath Deposition and Close-Spaced Sublimation

MRS Proceedings (2001)

Helio Moutinho David S. Albin Y. Yan R. G. Dhere Craig L. Perkins

Sublimation

Cadmium sulfide

10.1557/proc-668-h7.4

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Citations (2)

高圧Bridgman法を用いたCdTe合成と結晶成長【JST・京大機械翻訳】

Journal of Crystal Growth (2020)

K Al-Hamdi Tawfeeq W McPherson Seth K Swain Santosh Jennings Joshah N Duenow Joel

Cadmium telluride photovoltaics

Source

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Citations (0)

Metastability and Degradation of CdTe Solar Cells Investigated by nm-Scale Electrical Potential Imaging

2022 IEEE 49th Photovoltaics Specialists Conference (PVSC) (2022)

Chun‐Sheng Jiang David S. Albin Marco Nardone Kassidy H. Howard Adam Danielson

Metastability

Degradation

Cadmium telluride photovoltaics

10.1109/pvsc48317.2022.9938872

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Citations (1)

The effect of high-resistance SnO[sub 2] on CdS/CdTe device performance

AIP conference proceedings (1999)

X. Li R. Ribelin Yoxa Mahathongdy David S. Albin Ramesh Dhere

In this paper, we have studied the effect of high-resistance SnO2 buffer layers, deposited by low-pressure chemical-vapor deposition, on CdS/CdTe device performance. Our results indicate that when CdS/CdTe devices have a very thin layer of CdS or no CdS at all, the i-SnO2 buffer layer helps to increase device efficiency. When the CdS layer is thicker than 600 Å, the device performance is dominated by CdS thickness, not the i-SnO2 layer. If a very thin CdS layer is to be used to enhance device performance, we conclude that a better SnO2 buffer layer is needed.

Cadmium telluride photovoltaics

Buffer (optical fiber)

Deposition

10.1063/1.57900

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Citations (24)

Metastable electrical characteristics of polycrystalline thin-film photovoltaic modules upon exposure and stabilization

Journal of Photonics for Energy (2012)

Chris Deline Joseph A. del Cueto David S. Albin Steven Rummel

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light soaked at 65°C; exposed in the dark under forward bias at 65°C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark-bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Cadmium telluride photovoltaics

Biasing

10.1117/1.jpe.2.022001

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Citations (17)

Imaging, microscopic analysis, and modeling of a CdTe module degraded by heat and light

Solar Energy Materials and Solar Cells (2018)

Steve Johnston David S. Albin Peter Hacke Steven P. Harvey Helio Moutinho

Cadmium telluride photovoltaics

Thermography

Light intensity

Degradation

10.1016/j.solmat.2017.12.021

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Citations (13)

Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures

physica status solidi (RRL) - Rapid Research Letters (2019)

Darius Kuciauskas John Moseley Patrik Ščajev David S. Albin

CdTe‐based photovoltaics is a rapidly developing energy technology with one of the lowest levelized costs of electricity. But nonradiative Shockley–Read–Hall (SRH) recombination limits the efficiency of CdTe solar cells. Partial mitigation of bulk and grain‐boundary SRH recombination was achieved by alloying CdTe with Se, and CdSe x Te 1− x absorbers are used in high‐efficiency solar cells. Recently, interface recombination was significantly reduced with alumina passivation, but other properties of Al 2 O 3 /CdSe x Te 1− x /Al 2 O 3 heterostructures have not yet been investigated. Herein, further progress in understanding and developing polycrystalline heterostructures with x = 0.2 is reported. It is shown that external photoluminescence quantum yield is increased to 0.2%, quasi‐Fermi‐level splitting to 950 mV, minority carrier lifetimes to 750 ns, and mobility to 100 cm 2 Vs −1 . Such polycrystalline CdSe x Te 1− x electronic characteristics match or exceed CdTe single‐crystal properties. The resulting charge‐carrier diffusion length of ≈14 μm is several times greater than the absorber thickness in test structures and in typical CdTe solar cells. Herein, with passivation and absorbers, polycrystalline CdSeTe solar cell open‐circuit voltage is increased from the current 76% of the Shockley–Queisser limit to 82%, or close to 1 V is reported.

Cadmium telluride photovoltaics

Passivation

Carrier lifetime

Charge carrier

10.1002/pssr.201900606

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Citations (30)