A. Trampert

Paul Drude Institute for Solid State Electronics

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E. Tournié

Centre National de la Recherche Scientifique

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А. Н. Баранов

Université de Montpellier

Biswarup Satpati

Saha Institute of Nuclear Physics

E. Luna

Forschungsverbund Berlin

N. Deguffroy

Institut d'Électronique et des Systèmes

Jean‐Baptiste Rodriguez

Institut d'Électronique et des Systèmes

J. Herfort

Forschungsverbund Berlin

P. J. van Veldhoven

Eindhoven University of Technology

Y. Barbarin

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

R. Nötzel

South China Normal University

Cooperative Institutions

Centre National de la Recherche Scientifique

Université de Montpellier

Eindhoven University of Technology

Istituto Nanoscienze

University of Salento

Institut d'Électronique et des Systèmes

Universidad Politécnica de Madrid

ITMO University

Paul Drude Institute for Solid State Electronics

Laboratoire COBRA

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Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

Applied Physics Letters (2010)

E. Luna Biswarup Satpati Jean‐Baptiste Rodriguez А. Н. Баранов E. Tournié

The unique properties of the noncommon-atom InAs/GaSb short-period-superlattices (SPSL) strongly depend on the interface structure. These interfaces are characterized using transmission electron microscopy (TEM). The compositional sharpness is obtained from the comparison of the experimental contrast in g002 two-beam dark-field TEM images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions. The interfacial intermixing, defined by the chemical width, is obtained for SPSL with different periods and layer thicknesses, even in the extreme case of nominally less than 3 ML thick InAs layers. Nominal 1 ML InSb layers intentionally inserted are also identified.

10.1063/1.3291666

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Citations (49)

Type II transition in InSb-based nanostructures for midinfrared applications

Journal of Applied Physics (2008)

Romuald Intartaglia Gabriele Rainò Vittorianna Tasco Fabio Della Sala R. Cingolani

We present a study of the structural and optical properties of a heterostructure emitting in the midinfrared. The structure consists of monolayerlike InSb quantum wells inserted in an InAs∕GaSb superlattice (SL) matrix. X-ray diffraction and transmission electron microscopy analyses show a high structural quality of the structure. A strong emission line with a peak energy near 0.30eV (3.5μm) is observed from the monolayerlike InSb. In order to identify the physical origin of this transition, excitation density and temperature dependent photoluminescence experiments have been performed on samples with different nominal InSb thicknesses and SL designs. The experimental results suggest a type II band alignment, with electrons localized in the conduction miniband of the InAs∕GaSb SL matrix and holes localized in the monolayerlike InSb. This assignment is supported by the shift of InSb layer emission to lower energies when the SL design is changed, and by tight-binding calculations.

10.1063/1.2938063

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Citations (9)

Real structure of lattice matched GaAs–Fe3Si core–shell nanowires

Journal of Crystal Growth (2014)

B. Jenichen Maria Hilse J. Herfort A. Trampert

Vapor–liquid–solid method

Faceting

10.1016/j.jcrysgro.2014.10.017

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Citations (6)

On the growth conditions of 3–5 μm well-doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by transmission electron microscopy

Infrared Physics & Technology (2003)

E. Luna Andrés Felipe Guzmán A. Trampert J. L. Sánchez-Rojas E. Calleja

Active layer

10.1016/s1350-4495(03)00160-9

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Citations (3)

Interface analysis of InAs/GaSb superlattice grown by MBE

Journal of Crystal Growth (2006)

Biswarup Satpati Jean‐Baptiste Rodriguez A. Trampert E. Tournié A. Joullié

10.1016/j.jcrysgro.2006.11.284

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Citations (50)

1.55-μm range InAs/InP (100) quantum dot telecom devices

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2007)

R. Nötzel S. Anantathanasarn P. J. van Veldhoven Y. Barbarin E.A.J.M. Bente

Lasing and sharp line emission in the 1.55-μm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved through the insertion of ultra-thin (1-2 monolayers) GaAs interlayers underneath the InAs QDs. To increase the active volume widely-stacked QD layers are identically reproduced. Closely-stacked QDs reveal unpolarized emission from the cleaved side due to vertical electronic coupling which is important for polarization insensitive semiconductor optical amplifiers. Fabry-Perot narrow ridge-waveguide lasers implementing five layers of widely-stacked QDs as gain medium operate in continuous wave mode at room temperature with low threshold current, low transparency current density of 6 A/cm² per QD layer, and low loss of 4.2 cm^-1, which are accompanied by a 80 nm wide gain spectrum. Device performance does not suffer from sidewall recombination in deeply-etched QD lasers which possess similar threshold currents as shallowly-etched ones and do not deteriorate with time. This allows the fabrication of mono-mode and compact devices with small bending radii, as demonstrated by the operation of a QD ring laser with 40-GHz free spectral range. Micro-PL of single QDs exhibits sharp exciton-biexciton emission around 1.55 μm persisting to temperatures above 70 K; the prerequisite for single photon sources working at liquid nitrogen temperature for fiber-based quantum information and cryptography systems.

10.1117/12.731341

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Epitaxie par jets moléculaires de boîtes quantiques InSb

HAL (Le Centre pour la Communication Scientifique Directe) (2008)

N. Deguffroy А. Н. Баранов E. Tournié B. Satpati E. Luna

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EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal properties

HAL (Le Centre pour la Communication Scientifique Directe) (2008)

A. N. Titkov A. V. Ankudinov М. С. Дунаевский Konstantin Ladutenko V. P. Evtikvhiev

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