Eicke R. Weber

Research Field

Low-intensity laser illumination has been found to induce recrystallization of amorphous layers in ion-implanted silicon wafers. With the conditions used here, the temperature rise is much lower than that usually required for annealing of amorphous silicon. Therefore, this is an observation of recombination-induced nonthermal recrystallization of amorphous silicon layers.

Recrystallization (geology)

Nanocrystalline silicon

10.1103/physrevb.44.13116

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Citations (6)

The thermal stability of iron precipitates in silicon after internal gettering

Physica B Condensed Matter (2003)

Peng Zhang Hele Väinölä A. A. Istratov Eicke R. Weber

Getter

Atmospheric temperature range

10.1016/j.physb.2003.09.205

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Citations (6)

A New Approach to Grow Strain-Free GaAs on Si

MRS Proceedings (1990)

Hyunchul Sohn Eicke R. Weber Jay K. Tu Shyh Wang

Strain (injury)

Tensile strain

10.1557/proc-202-609

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Citations (1)

Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (1995)

Eicke R. Weber Scott A. McHugo H. Hieslmair

Getter

10.4028/www.scientific.net/ssp.47-48.165

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Citations (13)

From molecular aggregates to organic solar cells

Elsevier eBooks (2011)

Uli Würfel Michael Thorwart Eicke R. Weber

Audience measurement

Source

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Citations (0)

Impact of iron contamination in multicrystalline silicon solarcells: origins, chemical states, and device impacts

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2004)

Tonio Buonassisi Matthias Heuer A. A. Istratov Matthew A. Marcus Ralf Jonczyk

Source

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Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (2003)

Hele Väinölä Peng Zhang Antti Haarahiltunen A. A. Istratov Eicke R. Weber

Getter

10.4028/www.scientific.net/ssp.95-96.581

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Citations (1)

Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon

Materials science forum (1997)

Scott A. McHugo A. C. Thompson Masayuki Imaizumi H. Hieslmair Eicke R. Weber

The authors have performed studies on multicrystalline silicon used for solar cells in the as-grown state and after a series of processing and gettering steps. The principal goal of this work is to determine the rate limiting step for metal impurity gettering from multicrystalline silicon with an emphasis on the release of impurities from structural defects. Synchrotron-based x-ray fluorescence mapping was used to monitor the release process. Copper and nickel impurities were found to reside primarily at dislocations in the as-grown state of the material. Short annealing treatments rapidly dissolved the impurity agglomerates. Based on these results and modeling of the dissolution process, copper and nickel is in the form of small agglomerates (< 10 nm) clustered together over micron-scale regions in the as-grown material. Aluminum gettering further disintegrated the agglomerates to below the sensitivity of the system, 2--5 nm in radii. No significant barrier to release of copper or nickel from dislocations was observed.

Getter

Agglomerate

10.4028/www.scientific.net/msf.258-263.1795

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Citations (1)

Helmut Alexander – A Life for Science – Alive in Science

Journal of Physics Conference Series (2011)

W. Schröter H. Gottschalk Eicke R. Weber

Helmut Alexander was one of the four initiators of the "International Symposium on Dislocations in Tetrahedrally Coordinated Semiconductors" (Hünfeld 1978). This conference was the beginning of a conference series which got its new name EDS (Extended Defects in Semiconductors) first in 1980. He who gave his name to the "Helmut Alexander Award" of the EDS conference died on the third of December, 2009. The international advisory committee of EDS honoured his scientific work in 2002 recognizing him by instituting an award for the best poster presentation for a young scientist at the running conference session. The authors try to review his life with some of his scientific highlights.

Presentation (obstetrics)

10.1088/1742-6596/281/1/012001

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Citations (0)

Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire

MRS Proceedings (1997)

Joachim Krüger Sudhir G.S.Dorina Corlatan Yonah Cho Viihwan Kim

Stress relaxation

10.1557/proc-482-447

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Citations (17)