Nanoporous anodic aluminium oxide (AAO) films with a large-range tunable interpore distance (Dint) and unique microstructures have been fabricated by high voltage anodization (140–400 V) in 0.3 M oxalic acid electrolyte. The influences of anodization conditions (e.g., anodization voltage (Ua) and current density (ia)) on the microstructures of AAO films have been investigated in detail. Experimental results show that there is a linear relationship between Ua and Dint under relatively low Ua. With the increase of Ua, the influences of ia and dehydration of aluminium hydroxide on the Dint may not be ignored, thus resulting in a nonlinear relationship between Ua and Dint. When the anodization is performed at an excessively high Ua of 400 V, an interesting competitive growth of nanochannels inside the AAO film tends to occur, thus forming an AAO film with unique nano/micro morphology at the barrier layer side.
The rigid solid-solid contact at the interface between the solid electrolyte and electrodes in full-solid-state lithium-ion batteries (ASSBs) presents a considerable challenge to lithium ion transport. To address this, we propose using Li-concentrated succinonitrile (Li-SN45) as an efficient bilateral interface modifier in ASSBs. This material boasts exceptional ionic conductivity of 3.38 mS cm
Alumina nanotubes (ANTs) with unique fusiform morphologies were synthesized via a simple electrochemical route; the fluctuation of the electronic current density during the anodization process is considered to be the main reason for the formation of such new alumina nanostructures.
Quasi-two-dimensional (Q-2D) perovskites featured with multidimensional quantum wells (QWs) have been the main candidates for optoelectronic applications. However, excessive low-dimensional perovskites are unfavorable to the device efficiency due to the phonon-exciton interaction and the inclusion of insulating large organic cations. Herein, the formation of low-dimensional QWs is suppressed by removing the organic cation 1-naphthylmethylamine iodide (NMAI) through ultrahigh vacuum (UHV) annealing. Perovskite light-emitting diode (PLED) devices based on films annealed with optimized UHV conditions show a higher external quantum efficiency (EQE) of 13.0% and wall-plug efficiency of 11.1% compared to otherwise identical devices with films annealed in a glovebox.
Light-emitting diodes (LEDs) based on solution-processed metal halide perovskites have shown great application potential in energy-efficient lighting and displays. Multiple-quantum-well (MQW) perovskites simultaneously possess high photoluminescence quantum efficiency and good film morphology and stability, making it attractive for high-performance perovskite LEDs. Here, merits of MQW perovskites and the progress in MQW perovskite LEDs are reviewed. Challenges and future directions of perovskite LEDs are also discussed.
Abstract Black phase CsPbI 3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ- CsPbI 3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI 3 device applications.