High-quality ZnO films were grown on as well as Si substrates, and their structural and optical properties were compared. Larger average grain size of ZnO was obtained on . Further, differences in Raman spectroscopy were observed; the redshift of the E2 peak was less in , and its noise-to-signal ratio was also greatly reduced. In addition, the photoluminescence emission measurement shows a narrow peak with peak width, the mechanism of which was discussed correspondingly.
A silicidation process was suggested by investigating the solid-state reaction of the and Ni(Pt,Ti)/oxide/Si systems. The Ni ternary alloy was found to be able to both greatly push upward the nucleation temperature of high-resistivity phase, making use of the stabilizing effect of Pt, and tremendously alleviate the oxide sensitivity concerns during NiSi phase formation, utilizing the ability of Ti to react with oxide, possibly coupled with the catalytic effect of Pt, while not seriously impairing the silicidation process. Further, the phase-formation sequence during alloy silicidation and the variation of the film-layer structures and elemental diffusion with annealing temperatures were closely examined in order to reveal the possible physical and chemical mechanisms of both systems. Finally, the technological significance of this silicidation process was pointed out.
Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2 /TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented
To improve the properties of film (that is, thermal stability and morphological stability), Pt is added into the system. With the purposed growth of an oxide interlayer between Ni and Si, a previously unnoticeable catalysis effect of Pt was found, by which Ni can react with the oxide interlayer during anneal, thereafter facilitating Ni to diffuse into Si substrate and form phase.
Within a sub 90 nm technology node of IC manufacturing,NiSi is a potential contact material on source/drain and gate regions of a transistor.NiSi formation with addition of minor Pt was studied.The reaction sequence was investigated from Ni-rich to Si-rich phases.It was found that after adding Pt into the system,the transition temperature of Ni2Si-to-NiSi was pulled up from 300 to 350 ℃; the transition temperature of NiSi-to-NiSi2 up from 640 to 775 ℃;while,the onset temperature of film agglomeration was delayed to 750 ℃.
Germanium (Ge) metal-oxide-semiconductor-field-effect transistors (MOSFETs) have higher carrier mobilities than Si. We have studied the growth of high quality single-crystal germanium on insulator (GOI) using rapid liquid-phase epitaxial growth and defect-necking techniques. Stable single-crystal Ge growth was seen at a temperature of , below the melting point of Ge. At and above the Ge melting temperature, we found Ge segregating into balls. Defect-free crystals were grown from the semisolid state of Ge. The defect-necking technique was improved with an underlying insulator undercut to minimize dislocation or stacking faults. Up to long crystal-on-insulators were grown. Strain analysis of grown Ge was studied using Raman spectroscopy, and grown films were found to have tensile strain.
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