We present results of intensity and line broadening investigations of spontaneous emission from atoms excited in a copper hollow-cathode discharge. These measurements indicate a group of electrons exists in the discharge with a density of ≲1014 e−/cm3 and an effective electron temperature of 0.1 to 0.2 eV. The temperatures of atomic species present in the He-Cu discharge have been measured. Finally, the Lorentz width of spontaneous emission from Cu II laser transitions is observed to be a large fraction of the Doppler width and is consistent with the observed homogeneouslike operation of the copper ion laser.
When using simulations to determine electrode geometry and energy deposition patterns for TURP devices, a dominating factor for consideration is the tissue resection rate of the proposed system. While it is well understood that the vaporization of biological tissue is the mechanism of tissue division, previous models have been unable to match experimental results for a given applied power. Whether modeled as direct tissue/electrode contact or through the spatial transform of arcing, the predicted division rate was significantly lower than that observed though experiment. For the present study, heating rate was again used to determine the vaporization rate during the resection. This model assumes that in order for the wire loop to advance not all of the tissue in front of the electrode must be vaporized but the centerline of the advance must have sufficient energy deposited to divide the tissue. Integrating the volumetric energy deposition rate along this centerline in front of the advancing electrode provides a comparison to the required vaporization energy density resulting in a predicted time necessary for reaching the tissue division threshold. Using the simulation results for a standard TURP electrode and various power settings, five cases were compared to experimental results using in vitro bovine prostate tissue. Each tested at three cutting rates, evaluating the ability to advance through the tissue. The simulation predicted tissue division rates in good agreement with those seen via experiment, although the predicted values biased slightly higher suggesting that further mathematical model refinements are necessary.
The hollow cathode cylindrical magnetron is demonstrated to be capable of depositing uniform coatings on heavy metal fluoride fibers while maintaining the fiber temperature below 150°C. Pure metal coatings were deposited at typically 3000 Å/min, while oxynitride coatings were deposited at roughly 300 Å/min. We also demonstrated the hermeticity of AlN coatings for periods of several hundred hours even when immersed in water.
• Hemorrhage is the most serious side effect of heparin sodium use. Under several circumstances, one may need to administer heparin to patients who have had recent peripheral vascular operations. Avoiding an inordinate number of hemorrhagic complications is mandatory after such operations. Side effects appear to be minimized by administering heparin by continuous intravenous (IV) infusion. Nineteen patients with recent peripheral vascular operations were given heparin by continuous IV infusion. A known hemorrhagic complication developed in only one. The degree of hemorrhage was mild and did not necessitate cessation of treatment with heparin. None of the patients whose mean activated partial thromboplastin times were in the therapeutic range experienced thrombotic complications while receiving heparin. (Arch Surg1981;116:1077-1081)
Key Takeaways Water distribution and wastewater systems are vulnerable to physical attacks and cyberattacks. Security is critical for remote telemetry units (RTUs) because they can be a target for malicious service disruptions. Changes to present‐day RTU designs to improve effectiveness, situational awareness, and response times should minimize potential exploitation.
A pulsed ArF laser is used to photochemically deposit thin films of silicon dioxide on silicon substrates. As the substrate temperature was increased during film deposition, the etch rate, dielectric constant, flatband voltage shift, and hydrogen bonding of the SiO2 film decreased while the refractive index, resistivity, and breakdown voltage increased. The etch rate and infrared absorbance of bonded hydrogen incorporated in the SiO2 film also decreased when surface photons impinged on the growing films or when a post-deposition anneal was performed.
