Yijian Zhou

Tan Kah Kee Innovation Laboratory

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Guojiao Xiang

Henan University of Science and Technology

Yang Zhao

Henan University of Science and Technology

Hui Wang

Henan University of Science and Technology

Wenbo Peng

Xi'an Jiaotong University

Jingjie Li

Beijing University of Technology

Qun Yan

Fuzhou University

Hongyuan Fu

Beijing University of Chemical Technology

Jinming Zhang

Beijing National Laboratory for Molecular Sciences

Jie Sun

Tan Kah Kee Innovation Laboratory

Tianxi Yang

University of British Columbia

Cooperative Institutions

Henan University of Science and Technology

Fuzhou University

Chinese Academy of Sciences

Tan Kah Kee Innovation Laboratory

Shanghai Jiao Tong University

Fudan University

University of Chinese Academy of Sciences

Xi'an Jiaotong University

Zhejiang University

South China University of Technology

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Het recentste Nieuwe Modieuze Frame van Glazen voor Mensen, het Semi Randloze Frame van Glazen, de Glazen van de Slijtage van het Oog2O Films

Feifan Yang Yibang Fan Jingjie Li Hongyuan Fu Guojiao Xiang

Source

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Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN

Optics Letters (2024)

Kui Pan Kaixin Zhang Yang Li Qiwei Li Yijian Zhou

A key challenge in realizing ultrahigh-resolution displays is the efficient preparation of ultrasmall-sized (USS) light-emitting diodes (LEDs). Today, GaN-based LEDs are mainly prepared through dry etching processes. However, it is difficult to achieve efficient and controllable etching of USS LED with high aspect ratios, and LED sidewalls will appear after etching, which will have a negative impact on the device itself. Herein, a method for preparing USS LED based on GaN epitaxial wafers is reported (on two types of wafers, i.e., with p-GaN fully activated and unactivated). F

10.1364/ol.528884

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Size and temperature effects on optoelectronic properties of Micro-LED arrays for display applications

Displays (2024)

Yijian Zhou Tianxi Yang Jin Li Yuchen Lu Yang Li

10.1016/j.displa.2024.102841

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Thermal optimization of defected Cu2O photon-absorbing layer and the steady p-Cu2O/n-Si photovoltaic application

Vacuum (2022)

Feifan Yang Wenbo Peng Yijian Zhou Rong Li Guojiao Xiang

Leakage (economics)

Electron Mobility

10.1016/j.vacuum.2022.110876

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Effects of Oxygen Flow Rates on the Physical Characteristics of Magnetron Sputtered Single-Phase Polycrystalline Cu2O Films

Materials Research (2020)

Feifan Yang Yibang Fan Jingjie Li Hongyuan Fu Guojiao Xiang

The single-phase polycrystalline copper oxide (Cu2O) films were prepared on sapphire substrates by radio frequency (RF) magnetron sputtering technology which was characterized by low cost and high efficiency. The influences of oxygen flow rate on physical characteristics of the prepared films were investigated. The XRD results showed that the single-phase Cu2O film exhibited a (110) preferred orientation through the analysis of texture coefficient. The AFM images exhibited that the prepared Cu2O film had the highest surface roughness with a distinctive quadrangular surface morphology. The optical transmittance of the single-phase Cu2O film was under 35% and the band gap energy was calculated to be 2.30 eV, the absorption spectra included the peak wavelength of solar radiation and the high absorptivity made it to be a suitable absorbing material. The Hall measurement indicated that all the samples exhibited p-type conductivity. The resistivity, mobility and carrier concentration of the single-phase Cu2O film was 4625 Ω·cm, 1.87 cm2/v·s and 7.227×1014 cm−3, respectively.

Cavity magnetron

Molar absorptivity

Texture (cosmology)

10.1590/1980-5373-mr-2020-0275

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Reduced hardening of nanocrystalline nickel under multiaxial indentation loading

Journal of materials research/Pratt's guide to venture capital sources (2015)

Bill Tsz Fai Tang Yijian Zhou Thomas Zabev I. Brooks U. Erb

Nanocrystalline material

Indentation

Hardening (computing)

10.1557/jmr.2015.321

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Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs

Optics Communications (2024)

Yang Li Kaixin Zhang Tianxi Yang Junyang Nie Qiwei Li

Aspect ratio (aeronautics)

10.1016/j.optcom.2024.131332

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Preparation of AlN thin film and the impacts of AlN buffer layer on the carrier transport properties of p-NiO/n-InN heterojunction by magnetron sputtering

Materials Science in Semiconductor Processing (2021)

Wenbo Peng Yijian Zhou Guojiao Xiang Yue Liu Jiahui Zhang

Non-blocking I/O

Nanorod

10.1016/j.mssp.2021.106417

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Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions

Vacuum (2023)

Jinming Zhang Wenbo Peng Yijian Zhou Guojiao Xiang Yue Liu

Indium nitride

Non-blocking I/O

Crystal (programming language)

10.1016/j.vacuum.2023.112805

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Vacuum-Deposited Perovskite Cspbbr3 Thin-Films for Temperature-Stable Si Based Pure-Green All-Inorganic Light-Emitting Diodes

SSRN Electronic Journal (2022)

Guojiao Xiang Yijian Zhou Wenbo Peng Jinming Zhang Yue Liu

Metal halide perovskite light-emitting diodes (PeLEDs) are excellent candidates in the field of lighting and display due to their outstanding optical-electrical properties. However, the solution-processed technology of perovskite films and the organic electron/hole transport layers of PeLEDs make the operational stability of devices is still challenging. Herein, we successfully prepared highly luminescent CsPbBr3 perovskite films via vacuum-deposited method and then fabricated all-inorganic PeLEDs with the heterostructure of p-NiO/CsPbBr3/n-Si. Our device exhibits pure-green emission with a wavelength of 527 nm, a narrow full width at half-maximum of 18 nm, and a maximum luminance of 51933 cd/m2, representing one of the best brightness pure-green PeLEDs. Most importantly, the PeLEDs exhibited great thermal stability with a heat resistance up to 80℃. The electroluminescence peak position of the PeLEDs remains consistent when the ambient temperature increasing from 40℃ to 110℃. Moreover, the all-inorganic PeLEDs can maintain their good luminescence performance after seven thermal cycling tests (30℃ to 100℃). This work not only demonstrated a facile strategy to prepare high-quality pure-green CsPbBr3 perovskite films, but also provided an important all-inorganic device structure for highly thermal stability of PeLED.

Green-light

10.2139/ssrn.4268851

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