Takuto Shirai

Sophia University

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Double capped InAs Quantum Dots with strain compensation layer grown on InP/Si substrate

Takuto Shirai Xu Han Takahiro Ishizaki Koki Tsushima Masaki Matsuura

We have grown InAs quantum dots on InP and directly bonded InP/Si substrate using MOVPE where the strain of GaInAsP second cap layer were changed. We have investigated the density, size and optical characteristics dependent on difference of lattice mismatch of strain compensation layer.

Strain (injury)

Indium phosphide

10.1109/oecc48412.2020.9273520

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Strain dependence of GaInAsP / GaInAsP MQW laser diode on wafer bonded InP/Si substrate

The Japan Society of Applied Physics (2021)

Kouji Agata Takahiro Ishizaki Xu Han Koki Tsushima Takuto Shirai

Laser diode

Strain (injury)

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Template Thickness Dependence of GaInAsP MQW Laser Diode Grown on Directly Bonded InP/Si Substrate

2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC) (2019)

Takuto Shirai Xu Han Masaki Matsuura Takahiro Ishizaki Kouki Tsushima

We have fabricated MQW LD grown on directly bonded InP/Si substrate using MOVPE where the thickness of InP template was 1.0μm and 1.5μm. We have compared the lasing characteristics by the difference of template thickness.

Laser diode

10.23919/ps.2019.8817716

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Photoluminescence spectroscopy of GaInAsP/GaInAsP MQW structure grown on wafer bonded InP/Si substrate using selective MOVPE

The Japan Society of Applied Physics (2021)

Kota Shibukawa Koki Tsushima Shingo Ito Takahiro Ishizaki Koji Agata

Indium phosphide

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Voids occupancy comparison of directly bonded InP / Si substrate using gas out channel

The Japan Society of Applied Physics (2021)

Motonari Sato Takahiro Ishizaki Takuto Shirai Koki Tsushima Kota Shibukawa

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Annealing process dependence of directly bonded InP/Si substrate

The Japan Society of Applied Physics (2020)

Motonari Sato Takuto Shirai Takahiro Ishizaki Koki Tsushima Kota Shibukawa

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Photoluminescence spectroscopy of selective MOVPE growth of GaInAs/InP MQW structure on wafer bonded InP/Si substrate

The Japan Society of Applied Physics (2019)

Koki Tsushima Takahiro Ishizaki Xu Han Masaki Matsuura Takuto Shirai

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Lasing characteristics of MQW lasers with double surface electrodes on wafer bonded

The Japan Society of Applied Physics (2019)

Xu Han Masaki Matsuura Koki Tsushima Takahiro Ishizaki Takuto Shirai

Wafer Bonding

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Lasing Characteristics of GalnAsP SCH MQW High-mesa Laser on Silicon Substrate

2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC) (2019)

Koki Tsushima Kazuki Uchida Xu Han Hirokazu Sugiyama Masaki Aikawa

Successful room temperature lasing of GalnAsP SCH MQW high-mesa LD on silicon substrate was demonstrated. Laser structure was grown on wafer bonded InP-Si substrate by MOVPE and high-mesa structure was fabricated by photolithography and etching.

Mesa

10.23919/ps.2019.8818102

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Electric field distribution of MQW laser on directly bonded InP/SiO 2 /Si substrate

The Japan Society of Applied Physics (2021)

Shingo Ito Hann Xu Kota Shibukawa Koki Tsushima Takahiro Ishizaki

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