Chen Ping

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Influence of Oxygen Annealing on Character of BST Thin Film on SiO_2/Si Substrate

Research & Progress of Solid State Electronics (2004)

Chen Ping

Ba_(1-x)Sr_xTiO_3 (BST) thin films were deposited on SiO_2/Si by using the argon-ion beam sputtering technique and silicon planner process, and annealed in oxygen with different conditions, then the aluminum electrodes were made by using etching technique, based on these processings MIOS structure were finished. We study the film's characters of physics and electric. The result showed that there have obvious effects with characters BST film under different annealing conditions.

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Stability of output optical power of argon ion laser and application of optical feedback

Physics Experimentation (2003)

Chen Ping

The relations between working current and output optical power of argon ion laser as well as the relations between working current and the stability of output optical power are observed. Then by taking advantages of optical feedback, the problems of how to locate the feedback working place and how to conduct follow-up control are settled. The stability of the output optical power is significantly improved.

Optical power

Feedback Control

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INITIAL STAGE OF OXYGEN ADSORPTION ON GaP(111) SURFACES

Acta Physica Sinica (1990)

XIAO HAN-YU LU XUE-KUN DONG GUO-SHENG DING XUN-MIN Chen Ping

A number of surface analysis techniques, including XPS, UPS and HREELS, are used to study oxygen adsorption on GaP(111) surfaces.Initial oxygen adsorption is found to be saturated at an exposure around 104L. Information concerning surface electron structure variation in this stage, such as surface band bending, chemical shifts, etc. has been obtained. It is found that this stage of oxygen adsorption is related to surface defects. Proper annealing treatment can remove the surface defects along with the adsorbed oxygen. Such oxygen adsorption followed by annealing might be a way for defect removal in surface engineering.

Band bending

10.7498/aps.39.1665

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GaP BAND STRUCTURE STUDIED BY ARUPS

Acta Physica Sinica (1990)

LU XUE-KUN HOU XIAO-YUAN CING XUN-MIN Chen Ping

Hel ultraviolet light has been used to take angle resolved ultraviolet photoelectron spectra (ARUPS) of GaP(Ⅲ) surfaces. The observed photoelectron peaks have been explained based on detailed analysis of the data The measured characteristics of the bulk band structure agrees well with the theoretical prediction.

Ultraviolet

Ultraviolet photoelectron spectroscopy

10.7498/aps.39.108

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Preparation of SiC thin films by ion beam technology and PECVD

Nuclear Techniques (1998)

Chang Chen Congxin Ren Lixin Yang Yan Jin-long Zhihong Zheng

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Research advances in the effects of biogenic amines on insect reproduction.