Zhu Ziyue

Nanjing University of Aeronautics and Astronautics

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Haihong Qin

Nanjing University of Aeronautics and Astronautics

Dafeng Fu

Nanjing University of Aeronautics and Astronautics

Haotian Xie

Quanzhou Institute of Equipment Manufacturing Haixi Institute

Xin Nie

Research Center for Eco-Environmental Sciences

Shishan Wang

Center for Excellence in Molecular Cell Science

Dan Wang

Huazhong University of Science and Technology

Xu Huajuan

Nanjing University of Aeronautics and Astronautics

Xin Nie

Northwest Institute of Nuclear Technology

Xu Huajuan

Nanjing University of Aeronautics and Astronautics

Xu Huajuan

Nanjing University of Aeronautics and Astronautics

Cooperative Institutions

Nanjing University of Aeronautics and Astronautics

Chinese Academy of Sciences

Shanghai Dianji University

Nanjing University

Tsinghua University

Guangxi University

Institute of Geochemistry

Quanzhou Institute of Equipment Manufacturing Haixi Institute

Anhui University of Science and Technology

Technical University of Munich

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Status and development of overcurrent protection devices for more electric aircraft applications

Zhu Ziyue Haihong Qin Xin Nie Dafeng Fu Xu Huajuan

Development of more electric aircraft (MEA) is fostering increasing requirements for higher performance Power Distribution Units (PDU). Overcurrent protection architectures and devices in PDU require more flexibility and better performance to accommodate system components and electric loads. Traditional electromagnetic overcurrent protection devices such as CBs, AFCBs, and RCCBs are reviewed and smart power management method enabled by latest Solid State Power Controllers (SSPCs) is surveyed. Design considerations of SSPCs are addressed by advances in wide-bandgap switching devices and performance characteristics of SSPCs are verified by different modeling methods.

Overcurrent

10.1109/ipemc.2016.7512594

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Citations (11)

PMSM駆動のためのSiCとSiデバイスの比較【Powered by NICT】

IEEE Conference Proceedings (2016)

Haihong Qin Haotian Xie Zhu Ziyue Xin Nie Xu Huajuan

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Characteristics of SiC MOSFET and its application in a phase-shift full-bridge converter

Haihong Qin Kefeng Xu Xin Nie Zhu Ziyue Zhong Zhiyuan

With the outstanding advantages of SiC MOSFET, which has lower junction capacitance, low-on-state resistor and high junction operating temperature compared to a Si devices, the converter can achieve a high-frequency and high-efficiency. This increases the power density with smaller volume of passive components and reduced cooling requirements. However, in the phase-leg configuration, high dv/dt will worsen the interference between the two devices during a switching transient (i.e., crosstalk). Unfortunately, SiC power devices are more easily affected by crosstalk than Si devices due to their intrinsic properties. To utilize the full potential of fast SiC devices, a novel and cost-effective gate assist circuit for crosstalk supression is proposed in this paper. Besides, with the increase of power density, the thermal design is increasingly becoming the key factor that affects the reliability of converters. Thus, the thermal model of the phase-shift full-bridge converter (PSFBC) is established. The simulation and experimental results are in good agreement, which testifies the accuracy of thermal model. The efficiency of 2kW PSFBC based on Si and SiC MOSFETs under different loads is also measured and compared in this paper.

Power MOSFET

Power density

Crosstalk

Diffusion capacitance

10.1109/ipemc.2016.7512539

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より電気的な航空機応用のための過電流保護素子の現状と開発【Powered by NICT】

IEEE Conference Proceedings (2016)

Zhu Ziyue Haihong Qin Xin Nie Dafeng Fu Xu Huajuan

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An overview of SiC MOSFET gate drivers

Haihong Qin Ma Ceyu Dan Wang Haotian Xie Zhu Ziyue

Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have started gaining significant importance in various application areas of power electronics. During the last decade, SiC MOSFETs count not only as potential, but more importantly as alternative to silicon counterparts for high efficiency, high switching frequencies and high temperatures applications. Various SiC MOSFET driver designs have been proposed and their advantages and disadvantages are discussed as well. However, the design of gate drivers for SiC MOSFETs is very challenging. In particular, a sophisticated driver design is not only associated with properly switching the MOSFETs and decreasing the switching power losses, but also it must comply with the electromagnetic compatibility. This paper shows an overview of gate drivers for SiC MOSFETs. In particular, the basic operating principle of each driver along with their applicability and drawbacks are presented.

Gate driver

Power MOSFET

Fast switching

Power Electronics

10.1109/iciea.2017.8282808

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Comparisons of SiC and Si devices for PMSM drives

Haihong Qin Haotian Xie Zhu Ziyue Xin Nie Xu Huajuan

Compared to Si IGBT, SiC MOSFET are characterized by faster switching speed and higher operating junction temperature. Potential advantages including significantly lower switching loss, lower dead time and higher switching frequency are achieved by SiC devices. For the 1kW PMSM drive prototype specification, the power losses of Si IGBTs and SiC MOSFETs are compared. Dead-time effect is analyzed and the simulation results are given. 1kW PMSM drive prototypes based on Si and SiC power devices are fabricated respectively, and experimental results including power loss, efficiency, temperature rise and dead time effect under low speed are given, which verify that the PMSM drive based on SiC MOSFET achieves higher efficiency, higher power density and better dynamic performance.

Insulated-gate bipolar transistor

Power MOSFET

Dead time

Switching time

Power loss

Power density

10.1109/ipemc.2016.7512404

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Influences of circuit mismatch on paralleling silicon carbide MOSFETs

Haihong Qin Ying Zhang Zhu Ziyue Dan Wang Dafeng Fu

Current sharing is a major problem for paralleling devices, which can affect the performance and reliability of devices. In this paper, the factors leading to current unbalance in paralleling silicon carbide (SiC) MOSFETs are analyzed, especially the circuit mismatch. A double pulse test circuit based on SiC MOSFET is established for testing the circuit mismatch including common source stray inductance (Ls), switching loop stray inductance (Ld) and the gate driver resistance (Rg). The experimental results verify the influences caused by circuit mismatch on the current sharing in paralleling devices.

Wide-bandgap semiconductor

10.1109/iciea.2017.8282906

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Citations (27)

Status and development of overcurrent protection devices for more electric aircraft applications

IEEE Conference Proceedings (2016)

Zhu Ziyue Qin Haihong Xin Nie Dafeng Fu Xu Huajuan

Overcurrent

Power-system protection

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