Kian-Ming Tan

National University of Singapore

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Yee‐Chia Yeo

Taiwan Semiconductor Manufacturing Company (Taiwan)

Tsung-Yang Liow

Agency for Science, Technology and Research

Ganesh S. Samudra

National University of Singapore

Rinus T. P. Lee

GlobalFoundries (Germany)

Ming Zhu

Zhejiang Normal University

Dongzhi Chi

Institute of Materials Research and Engineering

Guo‐Qiang Lo

Singapore Science Park

Chih-Hang Tung

Taiwan Semiconductor Manufacturing Company (Taiwan)

N. Balasubramanian

National Aerospace Laboratories

N. Balasubramanian

University of Groningen

Cooperative Institutions

National University of Singapore

Agency for Science, Technology and Research

Institute of Microelectronics

Singapore Science Park

Institute of Materials Research and Engineering

Icahn School of Medicine at Mount Sinai

Massachusetts General Hospital

Cardiovascular Institute of the South

Harvard University

Mount Sinai Medical Center

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Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures

Applied Physics Letters (2005)

Tsung-Yang Liow Kian-Ming Tan Yee‐Chia Yeo Ajay Agarwal Anyan Du

We report the formation of defect-free SiGe vertical heterostructures using Ge condensation on vertical SiGe structures. To evaluate the effectiveness of substrate compliance in vertical structures, SiGe fins of various widths were subjected to Ge condensation. This formed vertical fin heterostructures comprising a SiGe core region sandwiched by Ge-rich regions. Using cross-sectional transmission electron microscopy (TEM), wide fins were found to contain more dislocations than narrower fins, in which we observed few or no dislocations. Lattice strain analysis using high-resolution TEM image analysis was used to confirm that strain relaxation has occurred. In the wide fins (noncompliant substrate), strain relaxation was dislocation mediated. In the narrow fins, substrate compliance enabled strain relaxation in the Ge-rich layer with reduced dislocation formation. Hence, we also demonstrated the formation of a strain-relaxed homogeneous SiGe fin (∼90% Ge concentration) with no observable dislocations.

Stress relaxation

10.1063/1.2151257

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Citations (25)

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

IEEE Electron Device Letters (2008)

Rinus Tek-Po Lee Tsung-Yang Liow Kian-Ming Tan A.E.-J. Lim Alvin Tian-Yi Koh

In this letter, we report the impact of incorporating aluminum (Al) in nickel aluminide disilcide (NiSi ₂ _-x AI _x ) on the Schottky-barrier for electrons (Phi _B ⁿ ) in NiSi _2-x Al _x /Si contacts for parasitic series resistance reduction. A wide range of Al concentration was investigated, and an optimum value was obtained. Based on the optimum Al concentration, arsenic- segregated NiSi _2-x Al _x (As-segregated NiSi _2-x Al _x ) contacts were shown to achieve conduction band-edge Schottky-barrier heights with Phi _B ⁿ = 0.133 eV. This novel As-segregated NiSi _2-x Al _x contact was integrated in FinFETs with a gate length of 80 nm and a fin width (W _Fin ) of 11 nm, demonstrating improvement in current drivability of 30% over FinFETs with As-segregated NiSi contacts. We show that these ultranarrow fins (W _Fin = 11 nm) can be fully silicided reliably with NiSi _2-x Al _x , demonstrating scalability and the smallest fully silicided Si fins reported to date. For these ultra-narrow Si fins, we have successfully alleviated the concerns of parasitic series resistance without the use of selective epitaxial raised source and drain technology.

10.1109/led.2008.917813

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Citations (14)

A Comprehensive Analysis of Porous Silicon by Surface and Optical Techniques

Elsevier eBooks (1994)

Zhe Chuan Feng Andrew T. S. Wee Sing Hai Tang Kian-Ming Tan J.R. Payne

Porous Silicon

10.1016/b978-1-4832-8382-1.50035-5

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Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

IEEE Electron Device Letters (2008)

Tsung-Yang Liow Kian-Ming Tan Rinus T. P. Lee Ming Zhu Ben Tan

Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% I _Dsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement.

Stressor

Strain engineering

10.1109/led.2008.2000669

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Citations (11)

ChemInform Abstract: Comparative Study of the Initial Oxygen and Water Reactions on Germanium and Silicon Using SIMS.

ChemInform (1994)

Andrew T. S. Wee C. H. A. Huan Patricia S. P. Thong Kian-Ming Tan

Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.

10.1002/chin.199414013

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A comparative study of the initial oxygen and water reactions on germanium and silicon using sims

Corrosion Science (1994)

Andrew T. S. Wee C. H. A. Huan Patricia S. P. Thong Kian-Ming Tan

Reactivity

10.1016/0010-938x(94)90105-8

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Citations (15)

A Unidirectional Ion Source Discharge

IEEE Transactions on Plasma Science (1982)

R.M. Jones Kian-Ming Tan A. Rajaratnam

An asymmetric axial plasma potential gradient would be useful for creating an efficient unidirectional ion source. A weak inhomogeneous axial magnetic field has been employed to enforce such plasma density and potential gradients. An alternative technique has been studied by computational methods and involves a differential vacuum pumping which introduces a strong axial dependence into the electron-gas ionization rate.

Potential gradient

10.1109/tps.1982.4316126

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Citations (1)

Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors

MRS Proceedings (2007)

Rinus Tek Po Lee Litao Yang Kah‐Wee Ang Tsung-Yang Liow Kian-Ming Tan

Carbon fibers

10.1557/proc-0995-g05-07

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A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack

Hock-Chun Chin Ming Zhu Zhi-Chien Lee Xinke Liu Kian-Ming Tan

We report a novel surface passivation technology employing a silane-ammonia gas mixture to realize very high quality high-k gate dielectric on GaAs. This technology eliminates the poor quality native oxide while forming an ultrathin silicon oxynitride (SiO _x N _y ) interfacial passivation layer between the high-k dielectric and the GaAs surface. Interface state density D _it of about 1 times 10 ¹¹ eV-1 cm ^-2 was achieved, which is the lowest reported value for a high-k dielectric formed on GaAs by CVD, ALD, or PVD techniques. This enables the formation of high quality gate stack on GaAs for high performance CMOS applications. We also realized the smallest reported (160 nm gate length) inversion-type enhancement-mode surface channel GaAs MOSFET. The surface-channel GaAs MOSFETs in this work has demonstrated one of the highest peak electron mobility of ~2100 cm ² /Vmiddots. The lowest reported subthreshold swing (~100 mV/decade) for surface-channel GaAs MOSFETs was also achieved for devices with longer gate length. Extensive bias-temperature instability (BTI) characterization was performed to evaluate the reliability of the gate stack.

Passivation

10.1109/iedm.2008.4796700

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Citations (22)

A Unidirectional IonSourceDischarge

R.M. Jones Kian-Ming Tan A. Rajaratnam

An asymmetric axial plasma potential gradient wouldbe useful forcreating anefficient unidirectional ionsource. A weakin- homogeneous axial magnetic field hasbeenemployed toenforce such plasma density andpotential gradients. Analternative technique has beenstudied bycomputational methods andinvolves a differential vacuumpumping whichintroduces astrong axial dependence intothe electron-gas ionization rate.

Source

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