Hao Jiang

Sun Yat-sen University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Zhisheng Wu

Beijing University of Chinese Medicine

Zesheng Lv

Sun Yat-sen University

Zimin Chen

Sichuan University

Gang Wang

Xiamen University

Bingfeng Fan

Foshan University

Zhiyuan Zheng

Meizhou City People's Hospital

Shanjin Huang

Tsinghua University

Hailong Wang

Sun Yat-sen University

Takashi Egawa

Nagoya Institute of Technology

Hualong Wu

Institute of Semiconductors

Cooperative Institutions

Sun Yat-sen University

Chinese Academy of Sciences

Tsinghua University

University of Chinese Academy of Sciences

Zhejiang University

Huazhong University of Science and Technology

Harbin Institute of Technology

State Key Laboratory of Optoelectronic Materials and Technology

Nanjing University

Shanghai Jiao Tong University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

Applied Physics Letters (2015)

Wei Zhang Jin Xu Wei Ye Li Yang Zhiqiang Qi

AlGaN-based solar-blind ultraviolet photodetectors have attractive potential applications in the fields of missile plume detection, biochemical sensing, solar astronomy, etc. In this work, significant deep ultraviolet detection enhancement is demonstrated on AlGaN-based metal–semiconductor–metal (MSM) solar-blind ultraviolet photodetectors by introducing the coupling of localized surface plasmon from Al nanoparticles with the high-Al-content AlGaN epilayer. The size-controlled Al nanoparticle arrays fabricated by nanosphere lithography can not only reduce the detectors' dark current but also bring about greatly enhanced responsivity. The peak responsivity of AlGaN-based MSM solar-blind ultraviolet photodetectors with Al nanoparticles can reach 2.34 A/W at 269 nm under 20 V bias, enhanced more than 25 times than that without Al nanoparticles. Our approach shows an efficient fabrication technique of high-performance and low-cost plasmonic enhanced AlGaN solar-blind MSM ultraviolet photodetectors.

Ultraviolet

Nanosphere lithography

10.1063/1.4905929

Cite

Citations (120)

In 0.15 Ga 0.85 N visible-light metal-semiconductor-metal photodetector with GaN interlayers deposited by pulsed NH 3

Journal of Crystal Growth (2018)

Hongxia Wang Xiaohan Zhang Hailong Wang Zesheng Lv Li Yong-xian

Quantum Efficiency

Active layer

Visible spectrum

10.1016/j.jcrysgro.2018.03.005

Cite

Citations (10)

Threading edge dislocation arrays in epitaxial GaN: Formation, model and thermodynamics

Journal of Crystal Growth (2013)

Zimin Chen Zhiyuan Zheng Yingda Chen Hualong Wu Cunsheng Tong

Recrystallization (geology)

Coalescence (physics)

10.1016/j.jcrysgro.2013.10.041

Cite

Citations (9)

Enhanced proton irradiation resistance in Cs-doped CH3NH3PbI3 films and solar cells

Journal of Energy Chemistry (2022)

Pan Luo Xue-Yin Sun Hao Jiang Yang Li Yang Li

Radiation Resistance

10.1016/j.jechem.2022.01.014

Cite

Citations (8)

Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes

Japanese Journal of Applied Physics (2012)

Zhiyuan Zheng Zimin Chen Yulun Xian Bingfeng Fan Shanjin Huang

In this study, we systematically investigate the effect of InGaN insertion layer (IL) on nitride-based light-emitting diodes. First, a series of samples with different InGaN ILs (Si doping level, thickness) were fabricated and investigated. An optimized condition of the IL was obtained based on current–voltage and electroluminescence measurements. Furthermore, in order to investigate the dominant mechanism for the improved performance of the samples with IL, the optimized sample and a control sample without InGaN IL were compared by means of X-ray diffraction, atomic force microscopy, photoluminescence, injection-current-dependent electroluminescence measurements and infrared camera images. Based on the discussion of these measurement results, we conclude that the performance improvements of samples with InGaN IL are due to both the effects of strain relaxation and better current spreading.

10.7567/jjap.51.072101

Cite

Citations (5)

Micro-Raman scattering and Time Resolved Luminescence of InGaN thin films grown on GaN/sapphire by MOCVD

Asia Communications and Photonics Conference 2021 (2017)

Chong Chen Deng Xie Hailong Wang Zhi Ren Qiu Hao Jiang

Indium cluster in InGaN epilayers prepared with different H2-treating times was investigated. In cluster with the form of lower atom bonds was evidenced by Raman spectra. Carrier lifetime was found to increase with the H2-treating time.

Indium gallium nitride

Wide-bandgap semiconductor

10.1364/acpc.2017.su2a.116

Cite

Citations (0)

Biohybrid Magnetic Microrobots for Tumor Assassination and Active Tissue Regeneration

ACS Applied Bio Materials (2022)

Dong Liu Ting Zhang Yijia Guo Yuting Liao Zijian Wu

Magnetic microrobots have attracted increasing research interest for diverse biomedical applications, such as targeted therapy and tissue regeneration. However, multifunctional microrobots with complex morphology at the microscale are urgently needed to be fabricated, actively controlled, and functionalized. In this study, the chrysanthemum pollen-derived biohybrid magnetic microrobots (CDBMRs) with spiny protrusion, hollow cavity, and porous surface structure were proposed for tumor assassination and active tissue regeneration. By exquisitely designing the sequential treatment process, CDBMRs were fabricated and the innate morphology of pollen templates was well preserved. Under magnetic field, CDBMR exhibited various individual and collective behaviors. CDBMRs were utilized for synergetic tumor treatment by the combination of magnetically controlled physical assassination and active drug delivery. Meanwhile, CDBMRs showed excellent ability for active cell delivery and tissue regeneration, which was further proved by enhanced osteogenesis ability. By making full use of the natural morphology of pollen grains, the biohybrid microrobots presented a promising strategy for effective tumor therapeutics and tissue regeneration.

Microscale chemistry

10.1021/acsabm.2c00880

Cite

Citations (20)

Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

Journal of Display Technology (2013)

Yulun Xian Shanjin Huang Zhiyuan Zheng Bingfeng Fan Zimin Chen

The performance of InGaN/GaN multiple quantum wells (MQWs) blue light-emitting diodes (LEDs) was improved by inserting a thin Mg-delta-doped hole injection layer at the end of the MQWs. The forward- and reverse-leakage currents were significantly reduced compared with those of the LEDs without the inserting layer. The light output power was enhanced by 13% at a 350 mA injection current. The improved performance could be ascribed to the dislocation suppression and hole concentration enhancement in the p-type GaN by inserting the Mg-delta-doped structure.

10.1109/jdt.2012.2226205

Cite

Citations (2)

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Journal of Crystal Growth (2004)

Yang Liu Takashi Egawa Hiroyasu Ishikawa Hao Jiang Baijun Zhang

Ultraviolet

10.1016/j.jcrysgro.2004.01.012

Cite

Citations (13)

High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

Applied Physics Letters (2015)

Yingda Chen Hualong Wu Enze Han Guanglong Yue Zimin Chen

High hole concentration was achieved in Mg-doped AlxGa1−xN (x ∼ 0.4) by using indium-surfactant-assisted delta doping method. A maximum carrier concentration of 4.75 × 1018 cm−3 was obtained, which is three times higher than that of the conventionally delta-doped sample. Sheet resistivity as low as 2.46 × 104 Ω/sq was realized, benefiting from the high hole concentration (p). Analysis results show that the Mg incorporation is effectively enhanced, while the compensation ratio and acceptor activation energy (EA) are significantly reduced by using In surfactant. It was also found that the In surfactant may induce stronger valence-band modulation, contributing to the decrease of EA and the increase of p.

Acceptor

Wide-bandgap semiconductor

10.1063/1.4919005

Cite

Citations (98)