Weng W. Chow

Sandia National Laboratories

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S. W. Koch

Institut National des Sciences Appliquées de Strasbourg

John E. Bowers

University of California, Santa Barbara

Murray Sargent

Microsoft (United States)

Yating Wan

King Abdullah University of Science and Technology

Frédéric Grillot

Laboratoire Traitement et Communication de l’Information

Sebastian Wieczorek

University College Cork

Mary H. Crawford

Sandia National Laboratories

Justin Norman

University of California, Santa Barbara

Ting S. Luk

Sandia National Laboratories

Arthur Fischer

Karlsruhe Institute of Technology

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Sandia National Laboratories California

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Office of Scientific and Technical Information

National Technical Information Service

University of New Mexico

University of California, Santa Barbara

University of Arizona

Radiology Associates of Albuquerque

Los Alamos National Laboratory

Center for Integrated Nanotechnologies

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<title>Many-body effects in the gain and refractive index of an active semiconductor medium</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1994)

Weng W. Chow

A comprehensive microscopic theory that includes bandgap renormalization, plasma screening and interband Coulomb effects is used to calculate the gain and carrier-induced refractive index in an active semiconductor medium. This paper describes the effects of these many-body interactions on bulk and quantum well structures.

Free carrier

Active medium

10.1117/12.178517

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Citations (1)

Carrier-induced refractive-index change in quantum-well lasers

Optics Letters (1988)

Weng W. Chow D. Depatie

We investigated the loaded gain and the carrier-induced refractive-index change in quantum-well lasers. A quantum-well laser is found typically to have a higher gain and a smaller refractive-index change than a conventional diode laser. We also found that the gain and the refractive-index change for these two types of semiconductor lasers saturate similarly, with the refractive index being a much weaker function of laser intensity.

Semiconductor optical gain

10.1364/ol.13.000303

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Citations (10)

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

The Journal of Physical Chemistry C (2014)

Michael E. Coltrin Andrew Armstrong Igal Brener Weng W. Chow Mary H. Crawford

The Energy Frontier Research Center (EFRC) for Solid-State Lighting Science (SSLS) is one of 46 EFRCs initiated in 2009 to conduct basic and use-inspired research relevant to energy technologies. The overarching theme of the SSLS EFRC is the exploration of energy conversion in tailored photonic structures. In this article we review highlights from the research of the SSLS EFRC. Major research themes include: studies of the materials properties and emission characteristics of III-nitride semiconductor nanowires; development of new phosphors and II–VI quantum dots for use as wavelength downconverters; fundamental understanding of competing radiative and nonradiative processes in current-generation, planar light-emitting diode architectures; understanding of the electrical, optical, and structural properties of defects in InGaN materials and heterostructures; exploring ways to enhance spontaneous emission through modification of the environment in which the emission takes place; and investigating routes such as stimulated emission that might outcompete nonradiative processes.

Solid-State Lighting

Light emission

Radiative Cooling

Photon Upconversion

Energy transformation

10.1021/jp501136j

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Citations (15)

Guided Cold-Atom Inertial Sensor Platforms with Membrane Integrated Photonics and Nanofibers.

Jongmin Lee Adrian Orozco William Kindel Nicholas Karl Jonathan Sterk

10.2172/1869386

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Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III–V/SiN Laser (Laser Photonics Rev. 16(6)/2022)

Laser & Photonics Review (2022)

Weng W. Chow Yating Wan John E. Bowers Frédéric Grillot

Quantum-Dot Lasers The maturating of III–V laser technology intensifies the exploration of complex optical configurations based on integrating III–V and silicon photonics. In article number 2100620, Yating Wan and colleagues describe a laser theory, beyond the customary quasi-mode approximation for treating resonator outcoupling, for understanding the physics underlying spectral narrowing to Hz-level, spontaneous-emission limited lasing linewidth. This theory will serve as an analytical tool for parametric studies to produce timely results in engineering design.

Laser linewidth

10.1002/lpor.202270026

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Photon antibunching from few quantum dots in a cavity

Physical Review A (2015)

Christopher Gies F. Jahnke Weng W. Chow

Single quantum dots (QDs) are frequently used as single-photon sources, taking advantage of the final exciton decay in a cascade that produces energetically detuned photons. We propose and analyze a new concept of single-photon source, namely, a few-QD microcavity system driven close to, but below the lasing threshold under strong excitation. Surprisingly, even for two or three QDs inside a cavity, antibunching is observed. To quantify the results, we find that a classification of single-photon emission in terms of antibunching in the autocorrelation function ${g}^{(2)}(0)$ is insufficient and more details of the photon statistics are required. Our investigations are based on a quantum-optical theory that we solve to obtain the density operator for the quantum-mechanical active medium and radiation field.

Photon antibunching

Single-Photon Source

Biexciton

10.1103/physreva.91.061804

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Citations (21)

Highly detuned Rabi oscillations for a quantum dot in a microcavity

Physical Review B (2013)

Alexander Carmele Julia Kabuß Weng W. Chow

Pronounced Rabi oscillations at large detunings are predicted for a system consisting of a semiconductor quantum dot in a microcavity. Besides an anticrossing at zero detuning, two additional anticrossings are possible at microcavity detunings of one longitudinal-optical-phonon frequency below and above the quantum-dot resonance. These phonon-assisted Rabi oscillations generally exhibit complex spectral features. The investigation is performed with a quantum-electrodynamical model, where the phonon reservoir effects are treated beyond the customary Markov, second-order Born approximation.

Rabi cycle

Rabi frequency

10.1103/physrevb.87.041305

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Citations (7)

Correlatons and Photon Statistsics in Nanocavity Emitters (invited).

Weng W. Chow

Source

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(a) Efficiency Droop without Auger in InGaN LEDS (b) Laser Gain in Ge-on-Si (invited).

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2012)

Weng W. Chow

Auger effect

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Saturation effects in semiconductor lasers

IEEE Journal of Quantum Electronics (1987)

Weng W. Chow Gregory C. Dente D. Depatie

This paper describes a theory for a semiconductor active medium interacting with a laser field. In a semiconductor laser, the charge carrier transitions are inhomogenously broadened, and electron-electron and electron-phonon collisions tend to dephase the laser transitions and maintain thermal equilibrium among the carriers. These properties cause semiconductor lasers to frequency tune as though they are inhomogeneously broadened and to saturate as though they are homogeneously broadened. A theory that contains these two aspects of semiconductor laser behavior is presented. From it, we are able to calculate the loaded gain, efficiency, intensity, and carrier-induced refractive index of a semiconductor active medium.

Semiconductor optical gain

Intrinsic semiconductor

Charge carrier

Saturation (graph theory)

10.1109/jqe.1987.1073517

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Citations (31)