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Shun‐Chung Yang

China Academy of Space Technology

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Der‐Chuen Lee

Institute of Earth Sciences, Academia Sinica

Tung‐Yuan Ho

National Taiwan University

C. R. Kao

National Taiwan University

Boon-Khim Liew

Nvidia (United States)

Jun Wu

Taiwan Semiconductor Manufacturing Company (Taiwan)

J.K. Ting

National Taitung University

J.S. Shy

Taiwan Semiconductor Manufacturing Company (Taiwan)

Tzu-Hsiang Yen

Taiwan Semiconductor Manufacturing Company (Taiwan)

Y.Y. Wang

Taiwan Semiconductor Manufacturing Company (Taiwan)

C.W. Liu

Taiwan Semiconductor Manufacturing Company (Taiwan)

Cooperative Institutions

Taiwan Semiconductor Manufacturing Company (Taiwan)

Taiwan Semiconductor Manufacturing Company (United States)

National Taiwan University

National Yang Ming Chiao Tung University

Taiwan Semiconductor Manufacturing Company (China)

National Tsing Hua University

University of Southern California

China Academy of Space Technology

Agricultural Biotechnology Research Center, Academia Sinica

National Taipei University

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Growth Pattern of Intermetallic Compound (IMC) Layer after Lead-tin Soldering for LTCC Film

2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT) (2023)

Mengjia Xu Xiaona Ren Xiaofei Jia Xiang-peng Feng Shun‐Chung Yang

Aerospace microwave LTCC substrates are all-gold material systems with Pt and Au as the main components of the lead-tin resistant solder film, which forms an intermetallic compound (IMC) layer at the solder interface after 63Sn-37Pb soldering. Structure and composition of LTCC film are analyzed, while the risk of solder joint in the subsequent assembly is evaluated. Based on the diffusion principle, the relationship between the growth rate of IMC layer and temperature after soldering is established. The tolerance of LTCC solder joints to different baking temperatures is also calculated based on the IMC layer growth rate. According to the research results of this paper, the recommended baking temperature for post-solder assembly is up to 120°C.

Dip soldering

Diffusion barrier

10.1109/icmmt58241.2023.10276524

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Consumption of Cu pad during multiple reflows of Ni-doped SnAgCu solder

International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde) (2011)

C. C. Chang Shun‐Chung Yang Yi‐Jane Chen C. R. Kao

The effects of solder volume and the number of reflows on the Cu consumption rate were studied. Nickel-doped Sn3Ag0.5Cu0.02Ni solder balls of different diameters (300, 400, 600 and 760 μm in diameter) were reflowed over Cu soldering pads with an opening of 600 μm in diameter. The reflow profile had a peak temperature of 235 ± 2°C and a 90 s duration during which the solder was molten. The nominal ramp rate and cooling rate were both 1.5 K s−1. The first reflow consumed the largest amount of Cu, and the subsequent reflows only consumed marginally more Cu. It was argued that the solder joints became saturated with Cu during the first reflow so that during the subsequent reflows the Cu substrates were consumed at markedly reduced rates. The Cu consumption increased with the diameter of the solder balls. This was because a larger amount of Cu was needed in order to saturate a solder joint with a larger solder volume. The doping of Ni did not change the Cu consumption rate despite the fact that the amount of Cu6Sn5 at the interface increased substantially with Ni doping.

Reflow soldering

10.3139/146.110502

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Interfacial Reaction and Wetting Behavior Between Pt and Molten Solder

Journal of Electronic Materials (2008)

Shun‐Chung Yang Wei‐Ling Chang Yi-Wun Wang C. R. Kao

Wetting layer

Diffusion barrier

Barrier layer

Diffusion layer

10.1007/s11664-008-0541-1

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Citations (15)

Hollow TiO₂ Hemispheres Obtained by Colloidal Templating for Application in Dye‐Sensitized Solar Cells

Advanced Materials (2008)

Shun‐Chung Yang Da J. Yang Jae Hyun Kim Jihyun Hong H. G. Kim

Hollow TiO2 hemispheres for application in dye-sensitized solar cells are prepared by means of rf-sputtering onto colloidal templated substrates. After removing the organic templates by thermal decomposition, quasi-ordered networks of hollow TiO2 hemispheres were formed. This approach should open up new opportunities for processing material architectures with high surface activity and effective charge transport for high performance photovoltaic and photoelectrochemical cells. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/c1808_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

Template

10.1002/adma.200701808

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Citations (203)

Growth kinetics of Ag3Sn in silicon solar cells with a sintered Ag metallization layer

Solar Energy Materials and Solar Cells (2014)

Tsung‐Lin Yang Kai-Yi Huang Shun‐Chung Yang Hsin‐Hsin Hsieh C. R. Kao

Isothermal process

Ribbon

10.1016/j.solmat.2014.01.018

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Citations (36)

The isotopic composition of Cadmium in the water column of the South China Sea

Geochimica et Cosmochimica Acta (2012)

Shun‐Chung Yang Der‐Chuen Lee Tung‐Yuan Ho

Isotopic signature

10.1016/j.gca.2012.09.022

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Citations (56)

A highly manufacturable 0.25 μm multiple-Vt dual gate oxide CMOS process for logic/embedded IC foundry technology

M.-H. Chang J.K. Ting J.S. Shy L. Chen C.W. Liu

A multiple-Vt high performance, high density and highly manufacturable 0.25 μm CMOS technology with a shallow trench isolation process has been successfully developed. Five metal layers with oxide CMP planarization, etchback W plug for borderless contacts/vias, and fully stacked contact/vias were used. Dual gate oxide process (5 nm for 2.5 V core, and 7 nm for 3.3 V I/O or 13 nm for 5 V I/O) with low defect density, and low Vt (∼0.2 V) or native Vt (∼0 V) devices for low power and mixed-mode applications are all demonstrated in this technology.

Chemical Mechanical Planarization

Shallow trench isolation

Foundry

Metal gate

10.1109/vlsit.1998.689236

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The isotopic composition of dissolved cadmium in the water column of the West Philippine Sea

Frontiers in Marine Science (2014)

Shun‐Chung Yang Der‐Chuen Lee Tung‐Yuan Ho Liang‐Saw Wen Hsu-Han Yang

The dissolved concentration and isotopic compositions of cadmium (Cd) in the seawater of the West Philippine Sea were determined. In general, Cd isotopic composition in the water column decreased with depth, with ε114/110Cd (ε114/110Cd = [(114Cd/110Cd)sample / (114Cd/110Cd)NIST 3108 - 1]×10000) ranging from +7.2 to +10.1 in the top 60 m, from +4.8 to +5.1 between 100 and 150 m, peaking at +8.2 at 200 m, decreasing from +4.5 to +3.3 from 400 to 1000 m, and remaining constant at +3.0 from 1000 m and deeper. Different to a Rayleigh fractionation model, the isotopic composition and log scale concentrations of Cd do not exhibit a linear relationship. However, from the deep water to thermocline, the variations in Cd concentration and ε114/110Cd are relevant to the variations of temperature and salinity, indicating that water mixing is the dominant processes determining the concentration and isotopic composition in the interval. At 200 m where North Pacific Tropic Water dominates the water mass, the elevated ε114/110Cd could be linked to the composition in the upper portions of the water mass. In the top 150 m, the ε114/110Cd varies similarly to the phytoplankton community structures, implying that Cd uptake by various phytoplankton species may be associated with the isotopic variation. However, the effects of atmospheric inputs to the ε114/110Cd in the surface water cannot be excluded. A box model calculation is used to constrain the contributions of various processes to the Cd isotopes of surface water, and the results indicate that the Cd concentration and isotopic composition in most of the water body of the region are controlled by physical mixing, while the effects of biological fractionation and atmospheric inputs are limited in the euphotic zone.

Temperature salinity diagrams

10.3389/fmars.2014.00061

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Citations (10)

The RKR potential energy curves for the X1Σ+ and A1Σ+ states of RbH

Journal of Molecular Spectroscopy (1980)

Yuan-Feng Hsieh Shun‐Chung Yang A.C. Tam K. K. Verma William C. Stwalley

Line (geometry)

Diatomic molecule

10.1016/0022-2852(80)90055-7

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Citations (21)

Evolutionary analysis of iron (Fe) acquisition system in Marchantia polymorpha

New Phytologist (2016)

Jing‐Chi Lo Munkhtsetseg Tsednee Ying‐Chu Lo Shun‐Chung Yang Jer‐Ming Hu

Summary To acquire appropriate iron (Fe), vascular plants have developed two unique strategies, the reduction‐based strategy I of nongraminaceous plants for Fe 2+ and the chelation‐based strategy II of graminaceous plants for Fe 3+ . However, the mechanism of Fe uptake in bryophytes, the earliest diverging branch of land plants and dominant in gametophyte generation is less clear. Fe isotope fractionation analysis demonstrated that the liverwort Marchantia polymorpha uses reduction‐based Fe acquisition. Enhanced activities of ferric chelate reductase and proton ATPase were detected under Fe‐deficient conditions. However, M. polymorpha did not show mugineic acid family phytosiderophores, the key components of strategy II, or the precursor nicotianamine. Five ZIP (ZRT/IRT‐like protein) homologs were identified and speculated to be involved in Fe uptake in M. polymorpha . MpZIP3 knockdown conferred reduced growth under Fe‐deficient conditions, and MpZIP3 overexpression increased Fe content under excess Fe. Thus, a nonvascular liverwort, M. polymorpha , uses strategy I for Fe acquisition. This system may have been acquired in the common ancestor of land plants and coopted from the gametophyte to sporophyte generation in the evolution of land plants.

Marchantia polymorpha

Bryophyte

10.1111/nph.13922

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Citations (18)