José Leonil Duarte

Universidade Estadual de Londrina

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ÉL

Édson Laureto

Universidade Estadual de Londrina

I. F. L. Dias

Universidade Estadual de Londrina

Ivan Frederico Lupiano Dias

Universidade Estadual de Londrina

Sidney A. Lourenço

Universidade Tecnológica Federal do Paraná

Marco Aurélio Toledo da Silva

Universidade Tecnológica Federal do Paraná

Luiz Carlos Poças

Universidade Tecnológica Federal do Paraná

Henrique de Santana

Universidade Estadual de Londrina

Jean‐Christophe Harmand

Centre de Nanosciences et de Nanotechnologies

Ricardo Vignoto Fernandes

Universidade Estadual de Londrina

Wesley Renzi

Instituto Federal de Educação Ciência e Tecnologia do Paraná

Cooperative Institutions

Universidade Estadual de Londrina

Universidade de São Paulo

Universidade Federal de São Carlos

Universidade Tecnológica Federal do Paraná

Universidade Federal do Paraná

Universidade Estadual de Campinas (UNICAMP)

Universidade Federal de Uberlândia

Universidade Federal de Minas Gerais

Universidade Estadual Paulista (Unesp)

Centro Universitário Curitiba

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Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates

Journal of Applied Physics (2002)

Luiz Carlos Poças José Leonil Duarte I. F. L. Dias Édson Laureto Sidney A. Lourenço

Properties of the interface between the epitaxial layer of heavily doped Al0.48In0.52As:Si and the InP(Fe) substrate are investigated by photoluminescence in AlInAs:Si/InP(Fe) heteroestructures grown by molecular beam epitaxy. The effect on heterostructure optical properties of including a thin Al0.22Ga0.26In0.52As:Si layer at the interface is investigated as well. To explain the different interface emission energies observed, the results are analyzed by using the mixed-type I–II interface model, which considers in the type II interface a narrow InAs well, with variable width, between AlInAs and InP. The observation of the interface emission at energies as high as 1.36 eV, at low excitation intensity, is explained taking into account the high doping level of the samples. The observed interface transition luminescence thermal quenching is tentatively explained by analyzing the spatial distribution of electrons in the triangular quantum well formed at the type II interface (or at the mixed I–II interface) as a function of the temperature.

Photoluminescence excitation

10.1063/1.1475370

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Citations (10)

Thickness effects on the optical properties of layer-by-layer poly(p-phenylene vinylene) thin films and their use in energy-modulated structures

Current Applied Physics (2011)

Édson Laureto Marco Aurélio Toledo da Silva Ricardo Vignoto Fernandes José Leonil Duarte I. F. L. Dias

Deposition

Layer by layer

Absorbance

10.1016/j.cap.2011.11.023

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Citations (6)

Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots

Journal of Luminescence (2013)

Flavio Franchello Leonardo Dias de Souza Édson Laureto A. A. Quivy Ivan Frederico Lupiano Dias

10.1016/j.jlumin.2012.12.062

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Citations (9)

Study of energy transfer in polymer blends of TFB:P3HT

Semina Ciências Exatas e Tecnológicas (2017)

Aline Renata Novais Rodrigues Wesley Renzi Neusmar J. A. Cordeiro Édson Laureto Ivan Frederico Lupiano Dias

Com o objetivo de estudar as propriedades ópticas do polímero TFB, e de sua blenda com o polímero P3HT, foram realizadas medidas de absorção e fotoluminescência (PL) para ambos polímeros, e de uma blenda TFB:P3HT (95:05), depositados sob lâminas de vidro, pela técnica de deposição por centrifugação. Foram utilizados diferentes solventes na preparação das amostras, a fim de comparar os possíveis efeitos dos mesmos na emissão e transferência de energia entre os dois polímeros. Medidas de tempo de decaimento foram realizadas para verificar se esse parâmetro se altera para o TFB preparado a partir de diferentes solventes, e quando na presença de P3HT. Os resultados das medidas de fotoluminescência dos polímeros isolados mostram que não há mudança na forma da emissão desses polímeros conforme se alteram os solventes utilizados no preparo das soluções. Entretanto, no caso da blenda, ocorre mudança na transferência de energia entre os polímeros, dependendo do solvente, deslocando a cor de emissão da amostra para o azul ou vermelho. No espectro de fotoluminescência da blenda é observada uma emissão em 575 nm, a qual não aparece na fotoluminescência das amostras do TFB e P3HT isolados. A partir das medidas de tempo de decaimento, vimos que, nas amostras de TFB, não há alteração considerável com a mudança do solvente. Já para a blenda, nota-se que a presença do P3HT faz com que o tempo de decaimento do TFB diminua, especialmente quando o solvente utilizado foi o clorofórmio.

10.5433/1679-0375.2017v38n1p91

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Citations (2)

Effects of Au/PEDOT:PSS/P3HT Interface Morphology on the Electrical and Optical Properties of Poly (3-Hexylthiophene)

Journal of Electronic Materials (2019)

Aline Domingues Batista Wesley Renzi Ricardo Vignoto Fernandes Édson Laureto José Leonil Duarte

Morphology

Solid-state physics

Interface (matter)

10.1007/s11664-019-07268-6

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Citations (2)

Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis

Journal of Applied Physics (1999)

Édson Laureto I. F. L. Dias José Leonil Duarte Eduardo Di Mauro Hiroaki Iwamoto

A set of heavily doped Al0.48In0.52As samples grown by molecular beam epitaxy on InP (Fe) substrates was investigated using the photoreflectance (PR) technique. The spectra at 300 K are characterized by a transition in the vicinity of the InP energy gap, followed by strongly damped Franz–Keldysh oscillations (FKOs) which do not appear when the spectra are obtained at 77 K. The builtin electric field estimated from FKOs shows a small doping dependence but is substantially affected by the inclusion of a thin layer of AlxGayIn1−x−yAs (x≡0.22) at the interface between InP (Fe) and AlInAs:Si. In order to explain these results, a model based on the discontinuity of the energy bands in the InP/AlInAs and InP/AlGaInAs/AlInAs systems and also on the matching of the Fermi levels between the different materials is suggested.

10.1063/1.370329

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Citations (7)

The effect of potential fluctuations on the optical properties of InGaAs∕InAlAs superlattices

Journal of Applied Physics (2005)

Luiz Carlos Poças E.M. Lopes José Leonil Duarte I. F. L. Dias Sidney A. Lourenço

Photoluminescence (PL) measurements as a function of temperature and excitation intensity were carried out in a sample containing two InGaAs∕InAlAs superlattices, grown on the same InP substrate, with quantum wells and barriers of different widths. The fluctuations in the confinement potential for excitons in both structures are investigated by following the blueshift of the PL peaks with increasing temperature as well as with rising excitation intensity, at low temperatures. A decrease in the full width at half maximum of the PL peaks with increasing excitation power was also observed. The change in the PL linewidth with excitation power is interpreted in terms of the variation of the relative contribution of the excitons localized at the excitonic band tail (due to the potential fluctuations) and of the nonlocalized excitons. Moreover, the activation energies of the nonradiative channels responsible for the thermal quenching of the photoluminescence peaks are deduced from an Arrhenius plot of the integrated PL intensity.

Blueshift

Arrhenius plot

Laser linewidth

10.1063/1.1903101

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Citations (21)

Annealing temperature effects on the azodye photoisomerization processes of layer-by-layer self-assembled poly(p-phenylenevinylene)/Congo red thin films

Journal of Luminescence (2012)

Gustavo G. Dalkiranis E. M. Therézio Marco Aurélio Toledo da Silva Luiz Carlos Poças José Leonil Duarte

Congo red

Layer by layer

10.1016/j.jlumin.2012.06.039

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Citations (4)

Preparation and characterization of microporous cellulose acetate films using breath figure method by spin coating technique

Cellulose (2017)

Fernanda Nardo Cobo Paula C. S. Faria-Tisher José Leonil Duarte Gizilene Maria de Carvalho

Cellulose triacetate

Cellulose acetate

Spin Coating

Dichloromethane

10.1007/s10570-017-1459-7

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Citations (33)

Temperature dependence of optical transitions in AlGaAs

Journal of Applied Physics (2001)

Sidney A. Lourenço I. F. L. Dias José Leonil Duarte Édson Laureto E.A. Menêses

AlGaAs structures with different aluminum concentration (x=0.0, 0.17, 0.30, and 0.40) were characterized by photoluminescence and photoreflectance techniques. The temperature dependence of optical transitions in the temperature ranging from 2 to 300 K were investigated. Y. P. Varshni [Physica (Utrecht) 34, 194 (1967)], L. Viña et al. [Phys. Rev. B 30, 1979 (1984)], and R. Pässler [Phys. Status Solidi B 200, 155 (1997)] models were used to fit the experimental points. The Pässler model gave the best adjustment to the experimental points. The tree models showed that the empirical parameters obtained through the adjustment of the experimental data in the three different models are aluminum composition dependent in the ternary alloy.

Ternary alloy

10.1063/1.1367875

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Citations (58)