H. W. Jiang

Fudan University

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A. J. Dahm

Case Western Reserve University

Qi Liu

Fudan University

Jonathan M. Read

Lancaster University

F. W. Van Keuls

Glenn Research Center

Hongjie Yu

Fudan University

Petra Klepac

University of Cambridge

Meng Li

Fudan University

Xiling Wang

Shanghai Meteorological Bureau

Yujian Song

Fudan University

Stefan Flasche

London School of Hygiene & Tropical Medicine

Cooperative Institutions

Fudan University

Chinese Academy of Sciences

University of California, Los Angeles

University of Science and Technology of China

Shanghai Fudan Microelectronics (China)

Institute of Microelectronics

University of Chinese Academy of Sciences

State Key Laboratory of ASIC and System

Princeton University

Case Western Reserve University

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Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf_0.5Zr_0.5O₂-Based Ferroelectric Capacitors

IEEE Transactions on Electron Devices (2025)

Yize Sun Shucheng Zhang Qi Liu Yu Li Haoyu Lu

Ferroelectric capacitor

Line (geometry)

Film capacitor

10.1109/ted.2025.3529400

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A 28nm 76.25TOPS/W RRAM/SRAM-Collaborative CIM Fine-Tuning Accelerator with RRAM-Endurance/Latency-Aware Weight Allocation for CNN and Transformer

2022 IEEE Asian Solid-State Circuits Conference (A-SSCC) (2024)

Chen Mu Zhen Huang H. W. Jiang Jie Liao Bo Jiao

10.1109/a-sscc60305.2024.10848596

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Comprehensive Analysis of Duty-Cycle Induced Degradations in Hf_xZr_1-xO₂-Based Ferroelectric Capacitors: Behavior, Modeling, and Optimization

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2024)

Feng Guan Yu Li H. W. Jiang Xiaodong Wang Yize Sun

Duty cycle

10.1109/vlsitechnologyandcir46783.2024.10631494

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Mobility of Electrons on Helium Films

Japanese Journal of Applied Physics (1987)

H. W. Jiang A. J. Dahm

Mobilities of two-dimensional arrays of electrons on helium films supported by a glass substrate were measured as a function of temperature at various densities and film thicknesses. Results are in reasonable agreement with those of other workers when fit to an empirical formula of Platzman and Iye. The temperature dependence of the scattering in excess of theory places severe constraints on explanations of excess scattering.

10.7567/jjaps.26s3.745

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Observation of an in-plane magnetic-field-driven phase transition in a quantum Hall system with SU(4) symmetry

arXiv (Cornell University) (2007)

Guo‐Ping Guo Yu Zhao Tao Tu Xingming Hao X. C. Zhang

In condensed matter physics, the study of electronic states with SU(N) symmetry has attracted considerable and growing attention in recent years, as systems with such a symmetry can often have a spontaneous symmetry-breaking effect giving rise to a novel ground state. For example, pseudospin quantum Hall ferromagnet of broken SU(2) symmetry has been realized by bringing two Landau levels close to degeneracy in a bilayer quantum Hall system. In the past several years, the exploration of collective states in other multi-component quantum Hall systems has emerged. Here we show the conventional pseudospin quantum Hall ferromagnetic states with broken SU(2) symmetry collapsed rapidly into an unexpected state with broken SU(4) symmetry, by in-plane magnetic field in a two-subband GaAs/AlGaAs two-dimensional electron system at filling factor around $ν=4$. Within a narrow tilting range angle of 0.5 degrees, the activation energy increases as much as 12 K. While the origin of this puzzling observation remains to be exploited, we discuss the possibility of a long-sought pairing state of electrons with a four-fold degeneracy.

Landau quantization

Quantum phases

10.48550/arxiv.0709.1343

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Quantum liquid versus electron solid around ν=1/5 Landau-level filling

Physical Review Letters (1990)

H. W. Jiang R. L. Willett H. L. Störmer D. C. Tsui L. N. Pfeiffer

In the high-magnetic-field low-disorder limit the ground state at \ensuremath{\nu}=1/5 Landau-level filling is an incompressible quantum liquid. This is determined by observing vanishing resistivity ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{x}}$ as the temperature T\ensuremath{\rightarrow}0. At filling factors below \ensuremath{\nu}=1/5 as well as in a narrow region above \ensuremath{\nu}=1/5, ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{x}}$ diverges exponentially as T\ensuremath{\rightarrow}0. This contrasts the T dependence at any higher \ensuremath{\nu}. We conclude that the quantum liquid at \ensuremath{\nu}=1/5 is surrounded by a different phase. In as much as the exponential divergencies are indicative of an electron solid this phase is reentrant in a narrow region above \ensuremath{\nu}=1/5.

Landau quantization

10.1103/physrevlett.65.633

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Citations (367)

Transport properties of a two-dimensional electron system at even-denominator fillings of the lowest Landau level

Physical review. B, Condensed matter (1992)

H. W. Jiang L. W. Engel D. C. Tsui H. L. Störmer L. N. Pfeiffer

We observe magnetotransport minima at Landau-level filling factors \ensuremath{\nu}=1/4 and 3/4 distinctly different from the transport signatures of the fractional quantum Hall effect. These features are similar to the anomalies reported earlier at half-filled Landau levels. Tilting the magnetic field away from normal incidence has no observable effect on the strength of the minima. The strong similarity between the transport properties at \ensuremath{\nu}=3/2, 3/4, 1/2, and 1/4 suggests a common origin.

Landau quantization

Shubnikov–de Haas effect

Maxima and minima

Similarity (geometry)

10.1103/physrevb.46.10468

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Transport anomalies in the lowest Landau level of two-dimensional electrons at half-filling

Physical review. B, Condensed matter (1989)

H. W. Jiang H. L. Störmer D. C. Isui L. N. Pfeiffer K. W. West

We observe deep minima in the diagonal resistivity ${\ensuremath{\rho}}_{\mathrm{xx}}$ of a two-dimensional electron system in GaAs at Landau-level filling factor \ensuremath{\nu}=(1/2 and (3/2. The anomalies saturate at nonzero values of ${\ensuremath{\rho}}_{\mathrm{xx}}$ as T\ensuremath{\rightarrow}0 and persist up to temperatures of \ensuremath{\sim}10 K. In spite of the strength of the ${\ensuremath{\rho}}_{\mathrm{xx}}$ features, no indication of plateau development is visible in the Hall resistance ${\ensuremath{\rho}}_{\mathrm{xy}}$. These structures at half-filling appear to have their origin in a novel many-particle state distinctly different from the fractional quantum Hall effect.

Landau quantization

Filling factor

Composite fermion

10.1103/physrevb.40.12013

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Citations (101)

Oscillatory Tunneling in Quantum Hall Regime

APS (1997)

L. W. Wong H. W. Jiang W. J. Schaff

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