C.L. Zhang

Chinese Academy of Sciences

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Zengfu Wang

Chinese Academy of Sciences

Peng Jin

Harbin Institute of Technology

Gang Shi

Chinese Academy of Sciences

Y.H. Chen

Institute of Statistical Science, Academia Sinica

Bo Xu

Chinese Academy of Sciences

Fengjiao Zhao

Dalian Maritime University

C. J. Lin

Guangxi Normal University

Cong Cui

Chinese Academy of Sciences

X.L. Ye

Chinese Academy of Sciences

Haijun Zhang

University of Science and Technology Beijing

Cooperative Institutions

Chinese Academy of Sciences

University of Chinese Academy of Sciences

University of Science and Technology of China

China Institute of Atomic Energy

Institute of Semiconductors

Hollister (United States)

Zhejiang University

High Magnetic Field Laboratory

Institute of Modern Physics

Peking University

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Molecular-beam epitaxial growth of position controlled InAs islands on clean edge of InGaAs/GaAs superlattice

Cong Cui Y.H. Chen C.L. Zhang Peng Jin Binyan Xu

A promising approach for positioning of InAs islands on [110]GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated. The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern's effect is studied by the different indium fraction and thickness of In/sub x/Ga/sub 1-x/As/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.

Indium arsenide

Indium gallium arsenide

Strain (injury)

10.1109/sim.2005.1511401

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Competition between fusion-fission and quasifission processes in 32S+184W reaction

Nuclear Physics A (2010)

C.L. Zhang Haijun Zhang C. J. Lin A. K. Nasirov G. Mandaglio

10.1016/j.nuclphysa.2009.12.040

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Citations (4)

Integrated photonics beyond communications

Applied Physics Letters (2023)

C.L. Zhang Minh A. Tran Zeyu Zhang Ali Eshaghian Dorche Yang Shen

The development of photonic integrated circuits has historically been driven by communications. However, emerging markets and opportunities require platforms that can operate over a broader wavelength range, offer additional capabilities, or improve performance. This paper provides a perspective on these emerging opportunities and the most promising approaches for addressing them, with a focus on platforms that support on-chip light generation and amplification.

Integrated Optics

10.1063/5.0184677

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Citations (13)

Electromechanical Fields in Piezoelectric Semiconductor Nanofibers under an Axial Force

MRS Advances (2017)

C.L. Zhang Youjun Luo Ruoran Cheng X. Y. Wang

10.1557/adv.2017.301

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Citations (60)

Reply to the “Comment on papers ‘Effect of Ag substitution on the transport property and magnetoresistance of LaMnO3’ [J. Magn. Magn. Mater. 248 (2002) 26] and ‘Possible magnetic phase separation in Ru doped La0.67Ca0.33’ [J. Magn. Magn. Mater. 257 (2003) 195]”

Journal of Magnetism and Magnetic Materials (2003)

S.L. Ye Wenhai Song J. M. Dai Kai Wang Shaogang Wang

Colossal Magnetoresistance

Substitution (logic)

10.1016/j.jmmm.2003.08.022

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Magnetoelectric effects in multiferroic laminated plates with imperfect interfaces

Theoretical and Applied Mechanics Letters (2017)

Dejuan Kong C. Ruan-Wu Youjun Luo C.L. Zhang Ch. Zhang

Two-dimensional (2D) equations for multiferroic (MF) laminated plates with imperfect interfaces are established in this paper. The interface between two adjacent sublayers, which are not perfectly bonded together, is modeled as a general spring-type layer. The mechanical displacements, and the electric and magnetic potentials of the two adjacent layers are assumed to be discontinuous at the interface. As an example, the influences of imperfect interfaces on the magnetoelectric (ME) coupling effects in an MF sandwich plate are investigated with the established 2D governing equations. Numerical results show that the imperfect interfaces have a significant impact on the ME coupling effects in MF laminated structures.

Magnetoelectric effect

10.1016/j.taml.2017.02.005

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Citations (12)

A novel method for positioning of InAs islands on GaAs (110)

Physica E Low-dimensional Systems and Nanostructures (2005)

Cong Cui Y.H. Chen C.L. Zhang Peng Jin Gang Shi

Strain (injury)

10.1016/j.physe.2005.06.001

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Citations (3)

Observation of Two Layers Spectrum Formed by Simultaneous H+ and He+ Interactions with EMIC Waves

Research Square (Research Square) (2024)

Heng Zhang Zhou Kang Baoming Ge Binbin Tang Wenya Li

Abstract In a collisionless plasma environment, wave-particle interaction is an important process that enables efficient energy exchange between particles and phase-coherent waves. We first discovered two layers bridge-like arcs structure in the energy spectrum formed by the simultaneous anomalous resonance interaction of Electromagnetic ion cyclotron waves with protons and He+ by Magnetospheric Multiscale mission observations. Meanwhile, our analysis results illustrate that the existence of distinct energy conversion between particles and Electromagnetic ion cyclotron waves by using the Wave-Particle Interaction Analyzer. Although accounting for corrections to the traditional resonance condition, the resonance energy between protons（H+）and EMIC waves remains significantly higher than the observed values, indicating that the interaction between protons and EMIC waves is an anomalous resonance process. In contrast, the resonance energy between He+ and EMIC waves is closer to the observed values, the observed parallel velocity of the particles is lower than the resonance velocity, meaning it still qualifies as anomalous resonance.

Emic and etic

Cyclotron resonance

Ion cyclotron resonance

10.21203/rs.3.rs-5281050/v1

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Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer

Journal of Crystal Growth (2004)

C.L. Zhang Zengfu Wang Fengjiao Zhao Bo Xu Peng Jin

10.1016/j.jcrysgro.2004.01.039

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Citations (8)

The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

Materials science forum (2005)

Gang Shi Bo Xu Peng Jin X.L. Ye Cong Cui

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.

Buffer (optical fiber)

10.4028/www.scientific.net/msf.475-479.1791

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