Matthias Steidl

Technische Universität Ilmenau

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Peter Kleinschmidt

Technische Universität Ilmenau

Thomas Hannappel

Technische Universität Ilmenau

Oliver Supplie

Technische Universität Ilmenau

Andreas Nägelein

Technische Universität Ilmenau

Agnieszka Paszuk

Technische Universität Ilmenau

W. Prost

University of Duisburg-Essen

Anja Dobrich

Technische Universität Ilmenau

Christian Koppka

Technische Universität Ilmenau

Ning Li

Henan University

Stefan Korte

Chemnitz University of Technology

Cooperative Institutions

Friedrich-Alexander-Universität Erlangen-Nürnberg

Technische Universität Ilmenau

Helmholtz-Zentrum Berlin für Materialien und Energie

Kirchhoff (Germany)

Forschungszentrum Jülich

Centre for Materials for Electronics Technology

Pontifical Catholic University of Peru

Clausthal University of Technology

University of Duisburg-Essen

Helmholtz Institute Erlangen-Nürnberg

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MOVPE-preparation of Si(111) surfaces for III–V nanowire growth

Matthias Steidl Agnieszka Paszuk Weihong Zhao Sebastian Brückner Anja Dobrich

We studied the preparation of the clean Si(111) surface in H ₂ ambient with in situ reflection anisotropy spectroscopy and UHV-based surface science tools after contamination-free transfer. X-ray photoelectron spectroscopy confirmed complete oxide removal after high-temperature annealing. In situ RAS enabled observation of the oxide removal in dependence of process temperature. Monohydride termination was verified by Fourier transform infrared spectroscopy which agrees with a (1×1) surface reconstruction we observed by scanning tunneling microscopy and low energy electron diffraction. By atomic force microscopy analysis of the morphology, we found that wet-chemical pretreatment has an impact on the different silicon surfaces we have prepared, including homoepitaxy and termination of silicon with arsenic.

Surface reconstruction

10.1109/iciprm.2013.6562590

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MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure

Nanotechnology (2018)

Matthias Steidl Klaus Schwarzburg B. Galiana Thomas Kups Oliver Supplie

Dilute nitride III-V nanowires (NWs) possess great potential as building blocks in future optoelectronical and electrochemical devices. Here, we provide evidence for the growth of GaP/GaPN core-shell NWs via metalorganic vapor phase epitaxy, both on GaP(111)B and on GaP/Si(111) hetero-substrates. The NW morphology meets the common needs for use in applications, i.e. they are straight and vertically oriented to the substrate as well as homogeneous in length. Moreover, no parasitical island growth is observed. Nitrogen was found to be incorporated on group V sites as determined from transmission electron microscopy (TEM) and Raman spectroscopy. Together with the incorporation of N, the NWs exhibit strong photoluminescence in the visible range, which we attribute to radiative recombination at N-related deep states. Independently of the N incorporation, a peculiar facet formation was found, with {110} facets at the top and {112} at the bottom of the NWs. TEM reveals that this phenomenon is related to different stacking fault densities within the zinc blende structure, which lead to different effective surface energies for the bottom and the top of the NWs.

Stacking fault

Facet (psychology)

Faceting

10.1088/1361-6528/aaf607

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Citations (10)

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

Applied Surface Science (2016)

W. Zhao Matthias Steidl Agnieszka Paszuk Sebastian Brückner Anja Dobrich

Low-energy electron diffraction

Surface reconstruction

10.1016/j.apsusc.2016.09.081

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Overcoming interface losses in organic solar cells by applying low temperature, solution processed aluminum-doped zinc oxide electron extraction layers

Journal of Materials Chemistry A (2013)

Tobias Stubhan Ivan Litzov Ning Li Michael Salinas Matthias Steidl

Intrinsic zinc oxide (ZnO) is widely used as an electron extraction layer (EEL) for inverted polymer solar cells. Despite the excellent device performance, a major drawback for large area production is its low conductivity. Using microscopic simulations, we derived a technically reasonable threshold value of 10−3 S cm−1 for the conductivity required to overcome transport limitations. For conductivity values typical for ZnO we observed the interface layer thickness restriction at only a few tens of nanometers, either as a fill factor drop due to serial resistance, eventually accompanied by a second diode behavior, or by the need for light soaking. Higher conductive aluminum-doped zinc oxide (AZO), which was introduced earlier, meets the desired conductivity threshold, however, at the cost of high temperature processing. High annealing temperatures (>150 °C) significantly improve the electrical properties of ZnO, but prohibit processing on plastic substrates or organic active layers. Here we report on AZO layers from a sol–gel precursor, which has been already reported to give sufficiently high conductivities at lower processing temperatures (<150 °C). We investigate the influence of different precursor compositions on the electrical properties of the thin films and their performance in inverted poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) solar cells. Low temperature AZO layers with thicknesses up to 680 nm maintained comparable performance to devices with thin AZO layers.

Active layer

10.1039/c3ta10987a

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Citations (85)

Resistance and dopant profiling along freestanding GaAs nanowires

Applied Physics Letters (2013)

Stefan Korte Matthias Steidl W. Prost Vasily Cherepanov Bert Voigtländer

Resistance profiles along as-grown GaAs nanowires were measured with a multi-tip scanning tunneling microscope used as a nanoprober. The nanowires were grown in the vapor-liquid-solid growth mode in a two-temperature-step mode and doped with Zn. Using a transport model, the resistance profile was converted to a dopant profile. The dopant distribution along the nanowires was found to correlate with the temperature during different phases of nanowire growth. The nanowire base grown at higher temperature exhibits a decreased dopant concentration. Mechanical stress by intentional bending of a nanowire was shown not to influence nanowire conductance.

Spreading resistance profiling

Vapor–liquid–solid method

10.1063/1.4823547

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Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope

Nano Research (2018)

Andreas Nägelein Matthias Steidl Stefan Korte Bert Voigtländer W. Prost

Depletion region

10.1007/s12274-018-2105-x

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Quality Control and Electrical Properties of Thin Amorphous (SiC)_1-x(AlN)_x Films Produced by Radio Frequency Dual Magnetron Sputtering

Materials science forum (2010)

G. Gálvez de la Puente Oliver Erlenbach J. A. Guerra T. Hupfer Matthias Steidl

Amorphous pseudobinary (SiC)1 x(AlN)x thin films have been produced by radio frequency dual magnetron sputtering from bulk SiC and AlN targets. For each target the emission characteristic, i.e. the spatial variation of the deposition rate was determined, in order to predict thickness distribution and spatial composition variation for the (SiC) (AlN) alloy. Impedance spectroscopy shows a high resistivity of the films in the SiC rich region, decreasing significantly towards the AlN rich region.

Cavity magnetron

Deposition

10.4028/www.scientific.net/msf.645-648.1199

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Citations (2)

Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements

Materials Science and Engineering B (2010)

G. Gálvez de la Puente J. A. Guerra Oliver Erlenbach Matthias Steidl Roland Weingärtner

Cavity magnetron

10.1016/j.mseb.2010.03.012

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Citations (6)