Ljubo Radic

NXP (Germany)

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Interaction of ion-implantation-induced interstitials in B-doped SiGe

Materials Science in Semiconductor Processing (2007)

Robert Crosby K. S. Jones Mark E. Law Ljubo Radic Philip E. Thompson

10.1016/j.mssp.2007.01.002

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A 90nm BiCMOS technology featuring 400GHz f<inf>MAX</inf> SiGe:C HBT

Vishal Trivedi J. John J.E.R. Young T.A. Dao David Morgan

A 90nm BiCMOS technology with a SiGe:C HBT having f _MAX >400GHz is presented. Both lateral and vertical scaling of the SiGe bipolar transistor are described, enabling SiGe HBT performance metrics f _T /f _MAX of ~230GHz/400GHz to be achieved with a minimum gate delay of <;3ps. A medium breakdown device is also integrated, achieving an f _T *BV _CEO product of 310GHz*V. CMOS implant and HBT process optimizations to address the additional thermal budget of the HBT module are also discussed. In concert with high-quality passives, this technology is especially suited for millimeter wave applications with high digital gate density requirements.

Heterojunction bipolar transistor

BiCMOS

Silicon-germanium

10.1109/bctm.2016.7738951

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Citations (7)

Modeling B clustering in Si and SiGe

MRS Proceedings (2004)

Ljubo Radic A. D. Lilak Mark E. Law

10.1557/proc-810-c8.14

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Citations (0)

Modeling of Dopant Defect Interactions

MRS Proceedings (2001)

C. Camarce Ljubo Radic P. Keys R. Brindos K. S. Jones

10.1557/proc-669-j9.1

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BIC Formation and Boron Diffusion in Relaxed Si_0.8Ge_0.2

MRS Proceedings (2004)

Robert Crosby Ljubo Radic K. S. Jones Mark E. Law Philip E. Thompson

10.1557/proc-810-c7.4

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Towards 500GHz f_MAX 140nm SiGe BiCMOS Technology for 5G/6G Applications

J. John J. Kirchgessner J.J.T.M. Donkers P.H.C. Magnée P.G.M. Sebel

BiCMOS

Silicon-germanium

10.1109/bcicts59662.2024.10745690

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Citations (1)

Dependence of boron cluster dissolution on the annealing ambient

Applied Physics Letters (2002)

Ljubo Radic A. D. Lilak Mark E. Law

Boron is introduced into silicon via implantation to form p-type layers. This process creates damage in the crystal that upon annealing causes enhanced diffusion and clustering of the boron layer. Reactivation of the boron is not a well-understood process. In this letter we experimentally investigate the effect of the annealing ambient on boron reactivation kinetics. An oxidizing ambient which injects silicon interstitials is compared to an inert ambient. Contrary to published theory, an excess of interstitials does not accelerate the reactivation process.

Oxidizing agent

10.1063/1.1496505

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Citations (12)

Modeling B Uphill Diffusion in the Presence of Ge

Ljubo Radic Antonio F. Saavedra Mark E. Law

10.1007/978-3-7091-0624-2_8

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Concentration Dependence of Boron-Interstitial Cluster (BIC) Formation in Silicon-on-Insulator (SOI)

MRS Proceedings (2004)

Antonio F. Saavedra K. S. Jones Ljubo Radic Mark E. Law K. Chan

Spreading resistance profiling

10.1557/proc-810-c8.11

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Dislocation loops in silicon-germanium alloys: The source of interstitials

Applied Physics Letters (2005)

Robert Crosby K. S. Jones Mark E. Law Ljubo Radic Philip E. Thompson

The relationships between extended defect evolution and boron diffusion in Si0.77Ge0.23 have been investigated. A SiGe structure was grown by molecular beam epitaxy with a 3×1018atoms∕cm3 boron marker layer positioned 0.50μm below the surface. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014atoms∕cm2 and subsequently annealed at 750 °C for various times. The evolution of extended defects in the near surface region was monitored with plan-view transmission electron microscopy. Secondary ion mass spectroscopy concentration profiles facilitated the characterization of boron diffusion. Boron experiences transient enhanced diffusion regulated by the dissolution of dislocation loops. The maximum diffusion enhancement in Si0.77Ge0.23 is less than that observed in pure Si.

10.1063/1.2123389

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Citations (4)