Sudhir Husale

Council of Scientific and Industrial Research

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Alka Sharma

Advanced Institute of Materials Science

Animesh Pandey

CSIR National Physical Laboratory of India

Mandeep Kaur

Lovely Professional University

Reena Yadav

Academy of Scientific and Innovative Research

Biplab Bhattacharyya

Council of Scientific and Industrial Research

Govind Gupta

CSIR National Physical Laboratory of India

Anurag Gupta

Indian Institute of Technology Patna

T. D. Senguttuvan

Academy of Scientific and Innovative Research

Vidya Nand Singh

CSIR National Physical Laboratory of India

Neha Aggarwal

Forschungsverbund Berlin

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Council of Scientific and Industrial Research

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Academy of Scientific and Innovative Research

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CSIR National Physical Laboratory of India

National Physical Laboratory

Indian Institute of Technology Kanpur

University of Delhi

Indian Institute of Technology Delhi

Indian Institute of Technology Roorkee

University of Basel

National Institute of Solar Energy

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Superconducting properties of tungsten nanowires fabricated using focussed ion beam technique

Nanotechnology (2019)

R.P. Aloysius Sudhir Husale Abhishek Kumar Farhan Jalees Ahmad Amit Kumar Gangwar

We report superconducting properties of tungsten meander structures fabricated using the focussed ion beam (FIB) induced technique. Three meander structures with individual line widths of ∼70, ∼300 and ∼450 nm were fabricated for evaluation and comparison of the superconducting properties. The resistance-temperature characteristics of the meanders were measured and analysed down to a temperature of 100 mK. The superconducting properties such as critical temperature (T C) and upper-critical field (H C2) of these wires are in comparison to the reported values of FIB deposited tungsten available in literature. While the normal state resistance increases sharply as the width of the wire decreases, the superconducting transition temperature registered a slight decrease. Significant amount of residual resistance (3.8% of normal state value at 100 mK) was observed for the sample with the lowest width (70 nm). The residual resistance trails as function of temperature was analysed invoking theoretical models governing the phase slip induced dissipations in superconducting nanowires. The results indicated signature of phase slips as the width of the wire decreases: thermally activated phase slips dominant near to the T C and quantum phase slip (QPS) near to T C as well as much below to the T C. The magneto-resistance isotherms indicated quantum phase transitions (QPT); typical of a superconductor-to-insulator transition (SIT) driven by magnetic field. The SIT transition which originates from the intrinsic disorder present in the sample can be tuned by an external parameter such as magnetic field, and can be modelled by standard theories of QPT for quasi 2D or (2 + 1) D XY models. The successful fabrication of meander structures of W using FIB and the demonstration of superconductivity suggest that FIB deposited W can be exploited for many of the technological applications of superconducting nanowires such as superconducting nanowire single photon detectors, bolometers, transition edge sensors and even for quantum current standard employing the QPS phenomenon.

Critical field

Transition temperature

10.1088/1361-6528/ab2d6d

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Citations (12)

Nonwoven Polymeric Nanofiber Sheets: Path Forward Toward a New Class of Hybrid Flexible Thermoelectrics

Energy Technology (2023)

Ajay Kumar Verma Mandeep Singh Kishor Kumar Johari Animesh Pandey Ashish Gupta

Hybrid flexible thermoelectric (TE) materials are widely being explored for wearable TEs, micro power generators, and self‐powered electronics. The commonly used methods for developing hybrid flexible TE materials are organic–inorganic composite which exhibits low TE performance and second is inorganic material deposition over organic substrate making it a two‐sheet structure that has sustainability concerns. In view of this, herein, a different class of highly flexible hybrid TE materials are designed using a network of electrospun 1D nanofibers (NFs) as a substrate which provides high surface area, better connectivity, and high flexibility. For the proof of concept, the NFs sheets of two polymers polyacrylonitrile (PAN) and cellulose acetate are used to deposit the well‐known Bi 2 Te 3 as a case study. Herein, the directionally aligned PAN‐based NFs sheet exhibits good TE properties leading to the maximum PF ≈51.4 μW m −1 K −2 at 384 K for the P ‐400 sample. Herein, the concept of a new class of hybrid TEs is successfully demonstrated by utilizing the flexible NF sheet as a substrate for inorganic TE materials, which will pave the way for sustainable flexible TE. Further, the TE performance can be enhanced by modulating certain factors such as the synthesis conditions of NFs and inorganic material, the thickness of deposition, and so on.

Polyacrylonitrile

Hybrid material

Flexible Electronics

Deposition

10.1002/ente.202300126

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Citations (2)

Plasmonically augmented broad spectral photodetection in metamaterials based CdS thin film heterostructure

Alka Sharma Mandeep Kaur T. D. Senguttuvan Sudhir Husale

Photodetection

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Structural and ultraviolet photo-detection properties of laser molecular beam epitaxy grown GaN layers using solid GaN and liquid Ga targets

Physica Scripta (2021)

Amit Kumar Mauraya Debashrita Mahana Prashant Tyagi Ramesh Ch A. K. Shukla

Abstract GaN epitaxial layers have been grown on sapphire (0001) substrate by laser molecular beam epitaxy technique using laser ablation of polycrystalline GaN solid and liquid Ga metal targets in the ambient of nitrogen plasma. In-situ reflection high energy electron diffraction and exsitu atomic force microscopy observations revealed that GaN growth using solid target yields rough surface under three-dimensional growth mode while a flat surface GaN is obtained using liquid Ga target. From X-ray rocking curve measurement, it is also observed that the GaN layer grown using solid GaN target has a relatively better structural quality. X-ray photoelectron spectroscopy confirmed Ga–N bond formation and near-stoichiometric composition of the GaN epilayers. The influence of threading dislocation density on the ultraviolet (UV) photoresponse properties of GaN layers have been studied using metal-semiconductor-metal (MSM) based device structure. It is found that the GaN MSM structure obtained using solid GaN target with lesser screw and dislocation densities exhibits a higher responsivity with fast response and recovery time.

Ultraviolet

10.1088/1402-4896/abfcef

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Synthesis and characterization of all-inorganic (CsPbBr₃) perovskite single crystals

Materials Advances (2022)

Ramashanker Gupta Ram Datt Swapnil Barthwal Harshit Sharma Animesh Pandey

This work investigates the synthesis of Cesium (Cs) based all-inorganic (CsPbBr 3 ) perovskite single crystals (PSCs) at low temperatures (45 °C) for application in photosensitive devices.

Characterization

10.1039/d2ma00345g

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Citations (9)

Revealing Enhanced Optoelectronic Performance of Sb₂Se₃‐Based Self‐Sustaining Heterostructures with Bi₂Se₃ and ZnSe: A Dual Polarity Photo Response

Advanced Functional Materials (2024)

Kapil Kumar Prince Sharma Sahil Verma Saurabh K. Saini Naveen Kumar Tailor

Abstract Through precise band engineering, Van der Waals heterostructures integration holds great promise for advancing high‐performance optoelectronic devices, especially photodetectors. This study presents self‐sustaining, dual‐polarity, high photo‐responsive heterostrutures (HS) photodetectors based on Sb 2 Se 3 , specifically Bi 2 Se 3 /Sb 2 Se 3 and ZnSe/Sb 2 Se 3 . The Bi 2 Se 3 (ZnSe) layer functions as a channel in a reconfigurable HS phototransistor configuration. These HS devices demonstrate a negative photoconductive response with bias‐modulated polarity switching of the photocurrent. The Bi 2 Se 3 /Sb 2 Se 3 device exhibits a responsivity switch from −4 mA W −1 to 0.14 A W −1 , while the ZnSe/Sb 2 Se 3 device shows a substantially enhanced responsivity switch from ‐400 mA W −1 to 12 A W −1 . This negative photo response results from a photoinduced carrier trapping mechanism at the interface of the channel layer and photosensitizer material. The bias modulation enables the switching from negative to positive responsivity. A comprehensive investigation of photoconductivity modulation provides a deeper understanding of the impact of the photogating effect and trap states under applied bias conditions. Ultrafast transient spectroscopy supports these findings, offering insights into the dynamics of charge carrier relaxation mechanisms and the trapping of photoexcited carriers in defect states, crucial for explaining the dual polarity photo response. These devices present significant advantages for switchable light imaging, optical communication, memory devices, convolution processing, and logic circuits.

Polarity (international relations)

10.1002/adfm.202405364

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Citations (1)

Cu–Ni nanoparticle-decorated graphene based photodetector

Nanoscale (2014)

Anil Kumar Sudhir Husale Amit Srivastava Pradip Kumar Dutta Ajay Dhar

The in situ growth of a Cu–Ni nanoparticle-decorated graphene nano-composite has been explored as a photodetector.

10.1039/c4nr00916a

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Citations (26)

Highly responsive, low-bias operated SnSe2 nanostructured thin film for trap-assisted NIR photodetector