Markus Dankerl

Schott (Germany)

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M. Stutzmann

Schott (Germany)

José A. Garrido

Institut Català de Nanociència i Nanotecnologia

Moritz V. Hauf

Infineon Technologies (Germany)

Andreas Reitinger

Technical University of Munich

Fedor Jelezko

Universität Ulm

Stefan Birner

Zuse Institute Berlin

Sven Ingebrandt

RWTH Aachen University

Jan Meijer

Leipzig University

Andreas Lippert

Schott (Germany)

Friedemann Reinhard

University of Rostock

Cooperative Institutions

Technical University of Munich

Schott (Germany)

Center for Integrated Quantum Science and Technology

Forschungszentrum Jülich

Jülich Aachen Research Alliance

University of Stuttgart

Centre National de la Recherche Scientifique

BioElectronics (United States)

Lawrence Berkeley National Laboratory

Institut Néel

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Diamond Transistor Array for Extracellular Recording From Electrogenic Cells

Advanced Functional Materials (2009)

Markus Dankerl Stefan Eick Boris Hofmann Moritz V. Hauf Sven Ingebrandt

Abstract The transduction of electric signals from cells to electronic devices is mandatory for medical applications such as neuroprostheses and fundamental research on communication in neuronal networks. Here, the use of diamond with its advantages for biological applications as a new material for biohybrid devices for the detection of cell signals is investigated. Using the surface conductivity of hydrogen‐terminated single‐crystalline diamond substrates, arrays of solution‐gate field‐effect transistors were fabricated. The characterization of the transistors reveals a good stability in electrolyte solutions for at least 7 days. On these devices, cardiomyocyte‐like HL‐1 cells as well as human embryonic kidney cells (HEK293), which were stably transfected with potassium channels, are cultured. Both types of cells show healthy growth and good adhesion to the substrate. The diamond transistors are used to detect electrical signals from both types of cells by recording the extracellular potential. For the HL‐1 cells, the shape of action potentials can be resolved and the propagation of the signal across the cell layer is visible. Potassium currents of HEK293 cells are activated with the patch‐clamp technique in voltage‐clamp mode and simultaneously measured with the field‐effect transistors. The ion sensitivity of the diamond surface enables the detection of released potassium ions accumulated in the cleft between transistor and cell.

HEK 293 cells

10.1002/adfm.200900590

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Citations (95)

The Surface Conductivity at the Diamond/Aqueous Electrolyte Interface

Journal of the American Chemical Society (2008)

José A. Garrido Andreas Härtl Markus Dankerl Andreas Reitinger Martin Eickhoff

We investigate the origin of the surface conductivity of H-terminated diamond films immersed in aqueous electrolyte. We demonstrate that in contrast to the in air situation, charge transfer across the diamond interface does not govern the surface conductivity in aqueous electrolyte when a gate electrode controls the diamond/electrolyte interfacial potential. Instead, this almost ideally polarizable interface allows the capacitive charging of the surface. This description resolves the observed disagreement of the pH sensitivity of the diamond surface conductivity in air and in aqueous electrolyte.

Surface conductivity

10.1021/ja078207g

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Citations (39)

Hydrophobic Interaction and Charge Accumulation at the Diamond-Electrolyte Interface

Physical Review Letters (2011)

Markus Dankerl Andreas Lippert Stefan Birner E. U. Stützel M. Stutzmann

The hydrophobic interaction of surfaces with water is a well-known phenomenon, but experimental evidence of its influence on biosensor devices has been lacking. In this work we investigate diamond field-effect devices, reporting on Hall effect experiments and complementary simulations of the interfacial potential at the hydrogen-terminated diamond/aqueous electrolyte interface. The interfacial capacitance, derived from the gate-dependent Hall carrier concentration, can be modeled only when considering the hydrophobic nature of this surface and its influence on the structure of interfacial water. Our work demonstrates how profoundly the performance of potentiometric biosensor devices can be affected by their surfaces' hydrophobicity.

Hydrophobic effect

10.1103/physrevlett.106.196103

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Citations (30)

Solid polyelectrolyte-gated surface conductive diamond field effect transistors

Applied Physics Letters (2012)

Markus Dankerl Mahmut Tosun M. Stutzmann José A. Garrido

Solid polyelectrolytes have been used in transistor devices to achieve gating with high capacitance. We use a solid polyethylene oxide/LiClO4 electrolyte to replace aqueous electrolytes as a gate for surface-conductive diamond field-effect transistors (FET). The resulting transistor shows characteristics comparable to those of aqueous electrolyte-gated diamond FETs. We investigate the polyelectrolyte/diamond interface with impedance spectroscopy and cyclic voltammetry, showing the electrochemical stability of the interface and capacitive gating up to 100 Hz. Hall effect measurements on the polyelectrolyte-gated devices are compared to those with liquid gates. The solid and transparent polyelectrolyte gates promise further applications for surface-conductive diamond FETs.

10.1063/1.3676662

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Diamond solution‐gated field effect transistors: Properties and bioelectronic applications

physica status solidi (a) (2012)

Markus Dankerl Moritz V. Hauf M. Stutzmann José A. Garrido

Abstract Solution gate field‐effect transistors (SGFETs) based on diamond show great potential in biosensing and bioelectronics thanks to the advantageous combination of physical and chemical properties offered by this carbon material. In this contribution, we discuss fundamental aspects of diamond SGFETs as well as a number of important applications. We first demonstrate how the p‐type charge accumulation at the hydrogen‐terminated diamond surface can be controlled with an electrolyte gate, forming the basis of diamond SGFETs. For a proper understanding of the operation of the surface conductive diamond SGFETs, it is essential to consider the effect of such a hydrophobic surface on the structure of water at the diamond/electrolyte interface. The electronic transport in the p‐type surface conductive channel is studied with Hall‐effect experiments performed in an electrolyte in order to elucidate the limiting scattering mechanisms for carriers at the diamond surface. We present the fabrication and characterization of arrays of solution‐gated field effect transistors based on single crystalline diamond revealing attractive sensor properties such as high sensitivity and low electronic noise. These diamond SGFETs are investigated as sensors of pH and ionic strength of the electrolyte. Further, we demonstrate the use of these devices for the detection of neurotransmitters when the sensor's active area is functionalized with suitable enzymes. Finally, we show the application of diamond SGFETs for the extracellular recording of the electrical activity of electrogenic cells, thus paving the way for the development of novel diamond‐based bio‐hybrid systems with the potential to facilitate further progress in the understanding of the cell–semiconductor interface.

Bioelectronics

10.1002/pssa.201200345

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Electronic properties of electrolyte-gated diamond FETs for bioelectronic applications

Markus Dankerl

In this thesis, solution gate field effect transistors (SGFETs) based on surface conductive, hydrogen-terminated diamond are investigated. In-liquid electrolyte-gated Hall effect experiments were used to study the electronic transport of carriers in the p-type channel. Different scattering mechanisms were found to limit the Hall mobility, depending on the level of nitrogen impurities and the surface orientation. The gate-dependent accumulation of holes at the diamond/electrolyte interface was studied. Corresponding simulations reveal that the hydrophobicity of the diamond surface, influencing the structure of interfacial water, is decisive to understand this charge accumulation. Finally, the application of SGFETs in several fields was discussed, including the demonstration of SGFETs based on graphene. The thesis concludes with the presentation of the use of diamond SGFETs for the detection of cell signals, setting the basis for future diamond-based bioelectronic devices.

Electron Mobility

Charge carrier

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Low-frequency noise in diamond solution-gated field effect transistors

Applied Physics Letters (2010)

Moritz V. Hauf Lucas H. Hess John Howgate Markus Dankerl M. Stutzmann

Electronic noise is investigated in diamond solution-gated field effect transistors. They exhibit 1/f-type noise, which is evaluated according to Hooge’s empirical relation. Correcting for the contribution of access regions, the Hooge parameter is found to be inversely proportional to the carrier density, suggesting that the noise originates from fluctuations in the number of charge carriers. Trapping and detrapping of charge carriers at dislocations of the diamond crystal is considered the main source of noise. An effective gate voltage noise of 16 μV rms is observed, which is comparable to the noise of similar devices based on Si and GaN.

Flicker noise

Charge carrier

Burst noise

10.1063/1.3483769

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Charge state manipulation of qubits in diamond

Nature Communications (2012)

Bernhard Grotz Moritz V. Hauf Markus Dankerl Boris Naydenov Sébastien Pezzagna

The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV− into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV−. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+. Point defects in diamond in the form of nitrogen vacancy centres are believed to be promising candidates for qubits in quantum computers. Grotzet al. present a method for manipulating the charge state of nitrogen vacancies using an electrolytic gate electrode.

Charge qubit

10.1038/ncomms1729

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Citations (218)

Diamond FET Arrays for Biosensors and Bioelectronics

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2009)

José A. Garrido Markus Dankerl Moritz V. Hauf Andreas Reitinger M. Stutzmann

Abstract not Available.

Bioelectronics

10.1149/ma2009-02/30/2320

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