Adam Fruehling

Texas Instruments (United States)

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Dimitrios Peroulis

Purdue University West Lafayette

Joshua Small

University of California, Davis

Xiaoguang Liu

State Key Laboratory of Pollution Control and Resource Reuse

Mohammad Abu Khater

Purdue University West Lafayette

Byunghoo Jung

Purdue University West Lafayette

Anurag Garg

Indian Institute of Technology Bombay

Wasim Irshad

Purdue University West Lafayette

Ryan C. Tung

University of Nevada, Reno

Gökhan Arıtürk

Texas Instruments (United States)

Wei Yang

China West Normal University

Cooperative Institutions

Purdue University West Lafayette

University of California, Davis

State Street (United States)

University of Illinois Urbana-Champaign

Radar (United States)

University of Michigan–Ann Arbor

University of California, Los Angeles

Sandia National Laboratories

Texas Instruments (United States)

University of Oklahoma

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Tunable cavity resonator including a plurality of MEMS beams

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2015)

Dimitrios Peroulis Adam Fruehling Joshua Azariah Small Xiaoguang Liu Wasim Irshad

Source

Cite

Citations (0)

RF MEMS switches for leakage control in wireless handheld devices

2006 IEEE Antennas and Propagation Society International Symposium (2007)

Adam Fruehling Kyle Hagner Kaushik Roy Dimitrios Peroulis

A new methods for controlling leakage power in handheld device was proposed. This paper presents the use of a MEMS switch as a replacement for the sleep transistor method to reduce leakage current allowing for significant improvement in the battery life of portable electronic systems.

Leakage (economics)

Leakage power

10.1109/aps.2007.4395439

Cite

Citations (5)

DC-dynamic biasing for >50× switching time improvement in severely underdamped fringing-field electrostatic MEMS actuators

Journal of Micromechanics and Microengineering (2012)

Joshua Small Adam Fruehling Anurag Garg X Liu Dimitrios Peroulis

This paper presents the design and experimental validation of dc-dynamic biasing for > 50× switching time improvement in severely underdamped fringing-field electrostatic MEMS actuators. The electrostatic fringing-field actuator is used to demonstrate the concept due to its robust device design and inherently low damping conditions. In order to accurately quantify the gap height versus voltage characteristics, a heuristic model is developed. The difference between the heuristic model and numerical simulation is less than 5.6% for typical MEMS geometries. MEMS fixed–fixed beams are fabricated and measured for experimental validation. Good agreement is observed between the calculated and measured results. For a given voltage, the measured and calculated displacements are typically within 10%. Lastly, the derived model is used to design a dc-dynamic bias waveform to improve the switching time of the underdamped MEMS actuators. With dynamic biasing, the measured up-to-down and down-to-up switching time of the actuator is ∼35 μs. On the other hand, coventional step biasing results in a switching time of ∼2 ms for both up-to-down and down-to-up states.

Biasing

10.1088/0960-1317/22/12/125029

Cite

Citations (6)

Electrostatic fringing-field actuation for pull-in free RF-MEMS analogue tunable resonators

Journal of Micromechanics and Microengineering (2012)

Joshua Small Wasim Irshad Adam Fruehling Anurag Garg X. Liu

This paper presents the design, fabrication and measurement of the first pull-in free tunable evanescent-mode microwave resonator based on arrays of electrostatically actuated fringing-field RF-MEMS tuners. Electrostatic fringing-field actuation (EFFA) is the key on achieving a wide tunable frequency range that is not limited by the conventional pull-in instability. Furthermore, total lack of dielectric layers and no overlap between the pull-down electrode and movable beams significantly enhance the robustness of our proposed tuning mechanism by making it devoid of dielectric charging and stiction and amenable to high-yield manufacturing. The proposed electrostatic fringing-field tuners are demonstrated in a highly loaded evanescent-mode cavity-based resonator. The measured unloaded quality factor is 280–515 from 12.5 to 15.5 GHz. In addition, a 10× improvement in switching time is demonstrated for the first time for EFFA tuners in a tunable microwave component by employing dc-dynamic biasing waveforms. With dynamic biasing, the measured up-to-down and down-to-up switching times of the resonator are 190 and 148 μs, respectively. On the other hand, conventional step biasing results in switching times of 5.2 and 8 ms for up-to-down and down-to-up states, respectively.

Biasing

Stiction

10.1088/0960-1317/22/9/095004

Cite

Citations (13)

Capacitive monitoring of electrostatic MEMS tunable evanescent-mode cavity resonators

European Microwave Integrated Circuit Conference (2011)

Xiaoguang Liu Adam Fruehling L.P.B. Katehi William J. Chappell Dimitrios Peroulis

This paper presents for the first time a novel concept for monitoring the resonant frequency of electrostatic MEMS tunable high-Q evanescent-mode cavity resonators through capacitance measurement. The proposed scheme relies on the fact that there is a one-to-one correspondence between the actuation capacitance C s and the resonant frequency f 0 . This relationship is derived theoretically using a spring-mass model. The proposed monitoring concept is then validated by static measurement using a capacitance meter. Discussions are given on implementing a dynamic monitoring scheme by using custom-designed integrated high-speed CMOS capacitance sensors.

Q factor

Source

Cite

Citations (5)

In situ monitoring of dynamic bounce phenomena in RF MEMS switches

Journal of Micromechanics and Microengineering (2013)

Adam Fruehling Ryan C. Tung Arvind Raman Dimitrios Peroulis

This paper presents the first ultra-low-power complementary metal–oxide–semiconductor (CMOS)-based measurement technique for monitoring the cold-switched dynamic behavior of ohmic radiofrequency microelectromechanical systems (RF MEMS) switches in real time. The circuit is capable of providing precise information about contact timing and ohmic contact events. Sampling of dynamic events at frequencies of 1 and 5 MHz shows contact timing accuracy of 99% when compared with real-time true-height information obtained from laser Doppler vibration data. The technique is validated for an ohmic RF MEMS switch with multiple bounces. The actuation voltage has also been designed to enhance bouncing behavior to more clearly study the performance and limits of the presented technique. More than 13 bounces are successfully captured by the electronic measurement technique. The weakest bounces exhibit vertical displacements of less than 20 nm as recorded by a laser Doppler vibrometer. This demonstrates the ability to capture precise timing information even for weak contacting events. A detailed discussion of how parasitics influence this technique is also presented for the first time.

Ohmic contact

10.1088/0960-1317/23/11/115007

Cite

Citations (3)

CMOS-based monitoring of contact events up to 4 MHz in ohmic RF MEMS switches

2011 IEEE MTT-S International Microwave Symposium (2010)

Adam Fruehling Mohammad Abu Khater Byunghoo Jung Dimitrios Peroulis

This paper presents an ultra-low power, fully electronic methodology for real-time monitoring of the contact events of ohmic RF MEMS switches. The measurement is based on a resistive readout circuit composed of 67 transistors with a 105 µm × 105 µm footprint. This is coupled with a novel implementation of a single-crystal silicon switch capable of operating from DC-40 GHz. The CMOS readout electronics tap the RF circuitry through two 1.6 kΩ resistors that add negligible insertion loss to the switch. Experimental and theoretical results demonstrate that timing information for the switch contact behavior is accurately measured for all consecutive bounce events that occur during the time it takes for the switch to come to a fully closed state (25–30 µs). A simple one-dimensional contact model agrees to within 10–20% with the measured landing times. In addition, a finite contact duration of 2–3 µs for each landing is accurately captured experimentally. This demonstrates the potential of this technique to real-time on-chip dynamic monitoring of contacts for packaged RF MEMS switches through their entire lifetime and after their integration in the final system.

Ohmic contact

Resistive touchscreen

Footprint

10.1109/mwsym.2010.5517174

Cite

Citations (2)

Cyclic evolution of bouncing for contacts in commercial RF MEMS switches

Adam Fruehling Wei Yang Dimitrios Peroulis

This paper systematically investigates for the first time the evolution of switch bounce for the Omron 2SMES-01 switch as a function of lifetime cycling. We demonstrate that the first bounce duration monotonically increases by as much as 20% over 200 million cycles. In addition, the amplitude of tertiary bounces monotonically increase by as much as 100 % over the same interval with the spontaneous occurrence of new bounces persisting as cycle count increases. Measurement of switch bouncing provides a readily accessible form of transient analysis of RF MEMS contacts and has the potential to become an indispensable tool for in-situ switch diagnostics related to adhesion forces, contact hardening, and film formation. A novel automated platform for studying both static and dynamic switch characteristics over the lifetime of an RF MEMS switch is demonstrated as well.

Transient (computer programming)

10.1109/memsys.2012.6170280

Cite

Citations (13)

A single-crystal silicon DC-40 GHz RF MEMS switch

IEEE MTT-S International Microwave Symposium digest (2009)

Adam Fruehling Rick Pimpinella Ron Nordin Dimitrios Peroulis

This paper presents a new DC-40 GHz RF MEMS switch whose moving part is made of single-crystal silicon (SCS). Unlike thin-film metals commonly employed in RF MEMS switches, SCS is essentially defect-free, has well known and repeatable material properties and is virtually stress free. This makes the switch design insensitive to process variations and amenable to high-yield manufacturing. Measured RF switches exhibit an on state insertion loss of less than 0.3 dB and an off state isolation of higher than 30 dB up to 40 GHz. Measured switching time is less than 4 us.

RF switch

10.1109/mwsym.2009.5166026

Cite

Citations (17)

Nano-switch for study of gold contact behavior

IEEE Sensors (2009)

Adam Fruehling Shijun Xiao Minghao Qi Kaushik Roy Dimitrios Peroulis

In this paper we present the fabrication and characterization of a new NEMS DC switch as a vehicle to characterize Au-to-Au contacts at nano-scale. The switch consists of a 1050-nm long, 200-nm wide and 50-nm thick cantilever gold beam. The measured on-state resistance values range from 83 ¿ to 640 ¿ and the actuation voltages from 4 V to 22 V. All measurements are conducted at a current of 1 ¿A and the obtained values are in good qualitative agreement with traditional elastic-plastic contact models. The calculated switching time is 55 ns. Characterization of contacts at nano-scale will be critical for the success of NEMS devices used in ultra low-power sensors. To this end, we examine the impact of such a switch as a leakage control mechanism.

Nanoelectromechanical systems

Contact resistance

Electrical contacts

Leakage (economics)

Characterization

10.1109/icsens.2009.5398176

Cite

Citations (7)