Brendan A. Wood

McMaster University

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i-10 index

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Co-Authors

Ray LaPierre

McMaster University

Martin Aagesen

University of Copenhagen

Jonathan Boulanger

Harvard University

A. C. E. Chia

McMaster University

Sung-Yang Wei

National Yang Ming Chiao Tung University

Won Taek Choi

Lawrence Livermore National Laboratory

M. Q. Huda

University of Alberta

Sadegh Yazdi

University of Colorado Boulder

P Kuyanov

McMaster University

Simarjeet S. Saini

University of Waterloo

Cooperative Institutions

McMaster University

University of Waterloo

Technical University of Denmark

University of Copenhagen

Lawrence Livermore National Laboratory

National Renewable Energy Laboratory

Danish Defence Acquisition and Logistics Organization

University of California, Santa Barbara

Solarplan (Denmark)

UNSW Sydney

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Design and Characterization of Photoelectrodes from First Principles

Tadashi Ogitsu Brendan A. Wood Won Taek Choi M. Q. Huda Sung-Yang Wei

Although significant performance improvements have been realized since the first demonstration of sunlight-driven water splitting in 1972, mainstream adoption of photoelectrochemical (PEC) cells remains limited by an absence of cost-effective electrodes that show simultaneously high conversion efficiency and good durability. Here we outline current and future efforts to use advanced theoretical techniques to guide the development of a durable, high-performance PEC electrode material. Working in close collaboration with experimental synthesis and characterization teams, we use a twofold approach focusing on: (1) rational design of novel high-performance electrode materials; and (2) characterization and optimization of the electrode-electrolyte interface.

Characterization

Mainstream

Performance enhancement

Photoelectrochemical cell

Interface (matter)

Rational design

Material Design

10.2172/1043650

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GaAsP nanowire-on-Si tandem solar cell

Journal of Photonics for Energy (2017)

Brendan A. Wood P Kuyanov Martin Aagesen Ray LaPierre

GaAsP self-assisted core–shell p-i-n nanowires were grown on Si solar cells. The resulting tandem cell exhibited an enhanced Voc of 1.16 V, increasing from 0.54 V for the Si cell alone. Nevertheless, the efficiency of the tandem cell was only 3.51% as compared with 9.33% for the Si cell due to a current-limiting short-circuit current density from the nanowires. Further improvement in device performance can be realized by improving the nanowire open-circuit voltage and short-circuit current, related to doping of the nanowires.

Tandem

Open-circuit voltage

Limiting

10.1117/1.jpe.7.042502

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Citations (10)

Nanowire dopant measurement using secondary ion mass spectrometry

Journal of Applied Physics (2015)

A. C. E. Chia Navneet Dhindsa Jonathan Boulanger Brendan A. Wood Simarjeet S. Saini

A method is presented to improve the quantitative determination of dopant concentration in semiconductor nanowire (NW) arrays using secondary ion mass spectrometry (SIMS). SIMS measurements were used to determine Be dopant concentrations in a Be-doped GaAs thin film and NW arrays of various pitches that were dry-etched from the same film. A comparison of these measurements revealed a factor of 3 to 12 difference, depending on the NW array pitch, between the secondary Be ion yields of the film and the NW arrays, despite being identically doped. This was due to matrix effects and ion beam mixing of Be from the NWs into the surrounding benzocyclobutene that was used to fill the space between the NWs. This indicates the need for etched NWs to be used as doping standards instead of 2D films when evaluating NWs of unknown doping by SIMS. Using the etched NWs as doping standards, NW arrays of various pitches grown by the vapour-liquid-solid mechanism were characterized by SIMS to yield valuable insights into doping mechanisms.

10.1063/1.4931148

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Citations (11)

Characterization of a Ga-Assisted GaAs Nanowire Array Solar Cell on Si Substrate

IEEE Journal of Photovoltaics (2016)

Jonathan Boulanger A. C. E. Chia Brendan A. Wood Sadegh Yazdi Takeshi Kasama

A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-dependent properties to minimize passivation layer removal for electrical contacting is demonstrated. Thorough electrical characterization and analysis of the cell is reported. The electrostatic potential distribution across the radial p-i-n junction GaAs NW is investigated by off-axis electron holography.

Passivation

Characterization

Electron holography

10.1109/jphotov.2016.2537547

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Citations (44)

Fabrication and Characterization of GaAsP Nanowire-on-Silicon Tandem Photovoltaic Cells

Brendan A. Wood

Tandem

Characterization

Silicon nanowires

Source

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Citations (1)