Inyeal Lee

Sungkyunkwan University

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i-10 index

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Co-Authors

Gil‐Ho Kim

Sungkyunkwan University

Servin Rathi

Chettinad Health City

Dongsuk Lim

SK Group (South Korea)

Moonshik Kang

Sungkyunkwan University

Muhammad Atif Khan

Sungkyunkwan University

Lijun Li

Shanxi Medical University

Sun Jin Yun

Korea Research Institute of Chemical Technology

Yoontae Lee

Samsung (South Korea)

E S Kannan

Birla Institute of Technology and Science, Pilani

Sang‐Woo Kim

Yonsei University

Cooperative Institutions

Sungkyunkwan University

Samsung (South Korea)

Government of the Republic of Korea

Suwon Research Institute

Seoul National University

Korea University

Yonsei University

Korea Advanced Institute of Science and Technology

Electronics and Telecommunications Research Institute

Institute of Nanotechnology

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Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors

Journal of Applied Physics (2012)

Inyeal Lee Jianwei Wang Gil‐Ho Kim Jin‐Hong Park E S Kannan

Highly conductive and water-dispersible sheets of reduced graphene oxide (RGO) were produced by rapidly heating graphene oxide (GO) paper at a low temperature (300 °C) for a short processing time of 3 s. The GO paper was thermally treated during the rapid-heating reduction process and, consequently, the oxygen functional groups in the obtained RGO were highly reduced. The RGO film displays good thermal stability, crystallinity, low sheet resistance, and good dispersibility in water, which makes it an ideal candidate to be used in various carbon-based electronic devices. We finally demonstrate the suitability of RGO as an active channel material and as a source-drain electrode for graphene field-effect transistors, which bring the possibility of realizing all-carbon devices a step closer to reality.

Carbon fibers

Thermal Stability

Contact resistance

10.1063/1.4739486

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Citations (7)

Photodetector Based on Multilayer SnSe₂ Field Effect Transistor

Journal of Nanoscience and Nanotechnology (2017)

Moonshik Kang Servin Rathi Inyeal Lee Lijun Li Muhammad Atif Khan

We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe2) exfoliated from a high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe2 photodetector exhibits high photoresponsivity of 5.11 × 105 A W-1 and high specific detectivity of 2.79 × 1013 Jones under laser irradiation (λ = 450 nm). We also observed a reproducible and stable time-resolved photoresponse to the incident laser beam from this SnSe2 photodetector, which can be used as a promising material for future optoelectronic applications.

Diselenide

10.1166/jnn.2018.15189

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Citations (15)

単層カーボンナノチューブおよび数層van der Waals材料の高濃度懸濁水溶液のためのユニマ援助剥離

Langmuir (2017)

Yeon Changbong Inyeal Lee Kim Gil‐Ho Yun Sun Jin

Hamaker constant

DLVO theory

Source

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Citations (0)

Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films

Angewandte Chemie (2014)

Kang Hyuck Lee Hyeon‐Jin Shin B. Dhinoth Kumar Han Sol Kim Jinyeong Lee

Abstract Unintentionally formed nanocrystalline graphene (nc‐G) can act as a useful seed for the large‐area synthesis of a hexagonal boron nitride (h‐BN) thin film with an atomically flat surface that is comparable to that of exfoliated single‐crystal h‐BN. A wafer‐scale dielectric h‐BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc‐G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc‐G‐tailored h‐BN thin film was systematically analyzed. This approach provides a novel method for preparing high‐quality two‐dimensional materials on a large surface.

Nanocrystalline material

Hexagonal boron nitride

10.1002/ange.201405762

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Citations (5)

High performance MoS₂-based field-effect transistor enabled by hydrazine doping

Nanotechnology (2016)

Dongsuk Lim E S Kannan Inyeal Lee Servin Rathi Lijun Li

We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS2)-based field-effect transistor (FET). The threshold voltage of the MoS2 FET shifted towards more negative values (from -20 to -70 V) on treating with 100% hydrazine solution with the channel current increasing from 0.5 to 25 μA at zero gate bias. The inverse subthreshold slope decreased sharply on doping, while the ON/OFF ratio increased by a factor of 100. Gate-channel coupling improved with doping, which facilitates the reduction of channel length between the source and drain electrodes without compromising on the transistor performance, making the MoS2-based FET easily scalable.

Hydrazine (antidepressant)

10.1088/0957-4484/27/22/225201

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Citations (14)

Low temperature hydrogen sensing using reduced graphene oxide and tin oxide nanoflowers based hybrid structure

Semiconductor Science and Technology (2016)

A. Venkatesan Servin Rathi Inyeal Lee Jinwoo Park Dongsuk Lim

In this paper, we have demonstrated a low temperature hydrogen (H2) sensor based on reduced graphene oxide (rGO) and tin oxide nanoflowers (SnO2 NFs) hybrid composite film. The addition of SnO2 NFs into rGO solution inhibits irreversible restacking and agglomeration of rGO and increases the active surface area for interaction with H2. This rGO-SnO2 NFs hybrid film sensor showed an excellent response to H2 at 60 °C at 200 ppm with an improvement of 126% compared to pure rGO which was used as a control sample. The sensor also showed good response and recovery time in comparison to pure rGO film. The highly improved H2 sensing characteristics of rGO-SnO2 NFs hybrid are due to its (a) unique structural geometry that increased the surface area for H2 adsorption, and (b) change in the width of depletion layer at the interface due to H2 interaction.

Tin oxide

Hydrogen sensor

10.1088/0268-1242/31/12/125014

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Citations (29)

Arbitrary alignment-angle control method of electrospun fibers: potential for a stretchable electrode material

RSC Advances (2017)

Doo‐Hyeb Youn Changbong Yeon Jin Sik Choi Nae‐Man Park Inyeal Lee

This paper presents a method by which it is possible to control the align-angle arbitrarily from vertical to horizontal demonstrating a mechanical stretch of as much as 120%. Fibers are aligned directly onto the sample surface.

Sample (material)

Electrospinning

10.1039/c7ra08223a

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Citations (6)

Alternating Current Dielectrophoresis Optimization of Pt-Decorated Graphene Oxide Nanostructures for Proficient Hydrogen Gas Sensor

ACS Applied Materials & Interfaces (2015)

Jianwei Wang Servin Rathi Budhi Singh Inyeal Lee Han‐Ik Joh

Alternating current dielectrophoresis (DEP) is an excellent technique to assemble nanoscale materials. For efficient DEP, the optimization of the key parameters like peak-to-peak voltage, applied frequency, and processing time is required for good device. In this work, we have assembled graphene oxide (GO) nanostructures mixed with platinum (Pt) nanoparticles between the micro gap electrodes for a proficient hydrogen gas sensors. The Pt-decorated GO nanostructures were well located between a pair of prepatterned Ti/Au electrodes by controlling the DEP technique with the optimized parameters and subsequently thermally reduced before sensing. The device fabricated using the DEP technique with the optimized parameters showed relatively high sensitivity (∼10%) to 200 ppm hydrogen gas at room temperature. The results indicates that the device could be used in several industry applications, such as gas storage and leak detection.

Dielectrophoresis

Platinum nanoparticles

10.1021/acsami.5b01329

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Citations (47)

Highly responsive hydrogen gas sensing by partially reduced graphite oxide thin films at room temperature

Carbon (2012)

Jianwei Wang Youngreal Kwak Inyeal Lee Sunglyul Maeng Gil‐Ho Kim

Torr

Partial pressure

Graphite oxide

10.1016/j.carbon.2012.04.053

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Citations (76)

Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensor

Nanotechnology (2017)

A. Venkatesan Servin Rathi Inyeal Lee Jinwoo Park Dongsuk Lim

In this work, we report on the hydrogen (H2) sensing behavior of reduced graphene oxide (RGO)/molybdenum disulfide (MoS2) nano particles (NPs) based composite film. The RGO/MoS2 composite exhibited a highly enhanced H2 response (∼15.6%) for 200 ppm at an operating temperature of 60 °C. Furthermore, the RGO/MoS2 composite showed excellent selectivity to H2 with respect to ammonia (NH3) and nitric oxide (NO) which are highly reactive gas species. The composite's response to H2 is 2.9 times higher than that of NH3 whereas for NO it is 3.5. This highly improved H2 sensing response and selectivity of RGO/MoS2 at low operating temperatures were attributed to the structural integration of MoS2 nanoparticles in the nanochannels and pores in the RGO layer.

Molybdenum disulfide

Hydrogen sensor

10.1088/1361-6528/aa7d66

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Citations (22)