A. D. Bouravleuv

Saint Petersburg State Electrotechnical University

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GÉ

G. É. Cirlin

Saint Petersburg Academic University

Yu. B. Samsonenko

Institute for Analytical Instrumentation

N. T. Bagraev

Ioffe Institute

Harri Lipsanen

Aalto University

L. E. Klyachkin

Ioffe Institute

A. M. Malyarenko

Ioffe Institute

I. V. Shtrom

St Petersburg University

АИ

А. И. Хребтов

St Petersburg University

A. M. Mizerov

St Petersburg University

W. Gehlhoff

Technische Universität Berlin

Cooperative Institutions

Russian Academy of Sciences

Ioffe Institute

St Petersburg University

Saint Petersburg Academic University

Physico-Technical Institute

ITMO University

Centre National de la Recherche Scientifique

Peter the Great St. Petersburg Polytechnic University

Saint Petersburg State Electrotechnical University

Physical and Technical Institute

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Mn-assisted molecular-beam epitaxy growth (Ga,Mn)As nanowires

Journal of Physics Conference Series (2016)

R. R. Reznik Yu. B. Samsonenko А. И. Хребтов A. D. Bouravleuv P. Werner

Arrays of (Ga,Mn)As crystal nanowires on a GaAs (100) substrate were obtained using molecular-beam epitaxy at the substrate temperature 485°C. From the high energy electron diffraction patterns, the crystallographic phase of the nanowires is detected to be cubic which is supporting by ex situ microscopy study.

Crystal (programming language)

10.1088/1742-6596/769/1/012077

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Citations (0)

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

Semiconductors (2018)

K. Yu. Shubina T. N. Berezovskaya D. V. Mokhov I. A. Morozov K. P. Kotlyar

Isotropic etching

Plasma Etching

Dry etching

10.1134/s1063782618160297

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Citations (3)

Investigation of the piezoresistive properties and temperature coefficient of resistance of epitaxial GaN layers for applications in MEMS and thermal flow sensors

Journal of Physics Conference Series (2019)

A Kazakin Yakov Enns A. M. Mizerov R Kleimanov A. D. Bouravleuv

Abstract The paper presents the results of an experimental determination of the piezoresistive gauge factor and temperature coefficient of resistance of a GaN films grown by molecular beam epitaxy on sapphire substrates. The measured values were used to calculate the design and characteristics of the GaN hot-wires anemometer for the MEMS gas flow sensor.

Piezoresistive effect

Gauge factor

Anemometer

Temperature coefficient

10.1088/1742-6596/1410/1/012214

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Citations (1)

Self-Assembled Growth and Characterization of Mn_xP Nanowires

Japanese Journal of Applied Physics (2008)

Katsuaki Sato A. D. Bouravleuv Akinori Koukitu Takayuki Ishibashi

MnP nanowires have been grown by molecular beam epitaxy (MBE) without any preliminary deposited metal catalyst on InP(100) and GaAs(111)B substrates. Mn was supplied using a conventional Knudsen cell, whereas P2 was supplied as a gas by the decomposition of tertiary butylphosphine (TBP) using a cracking cell. The self-assembled growth of nanowires was observed when the substrate temperature exceeded 430 °C. Nanowires obtained on the InP(100) surface had diameters close to 150 nm, lengths of up to 2 µm, whereas nanowires grown on the GaAs(111)B surface had widths of up to 600 nm, lengths of up to 30 µm, and clear atomic facets. Magnetic and optical characterizations were also carried out.

Characterization

10.1143/jjap.47.8214

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Citations (2)

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

Semiconductors (2018)

A. M. Mizerov S. N. Timoshnev M. S. Sobolev E. V. Nikitina K. Yu. Shubina

Polarity (international relations)

Stoichiometry

10.1134/s1063782618120175

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Citations (19)

Optical and magnetic properties for erbium-related centres in self-assembly silicon nanostructures

Physica B Condensed Matter (1999)

N. T. Bagraev A. D. Bouravleuv W. Gehlhoff L. E. Klyachkin A. M. Malyarenko

Erbium

10.1016/s0921-4526(99)00631-6

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Citations (3)

Optically excited THz generation from ordered arrays of GaAs nanowires

Procedia Engineering (2017)

V. N. Trukhin A. D. Bouravleuv И. А. Мустафин J. P. Kakko Harri Lipsanen

THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.

10.1016/j.proeng.2017.09.674

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Citations (2)

Solar Cell Based on Core/Shell Nanowires

Semiconductors (2018)

N. V. Sibirev K. P. Kotlyar A. A. Koryakin I. V. Shtrom E. V. Ubiivovk

Quantum Efficiency

10.1134/s1063782618120229

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Citations (4)

Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

physica status solidi (RRL) - Rapid Research Letters (2010)

B. V. Novikov Sergei Serov N. G. Filosofov I. V. Shtrom V. G. Talalaev

Abstract Self‐standing III–V nanowires (NWs) are promising building blocks for future optoelectronic devices such as LEDs, lasers, photodetectors and solar cells. In this work, we present the results of low temperature photoluminescence (PL) characterization of GaAs NWs grown by Au‐assisted molecular beam epitaxy (MBE), coupled with the transmission electron microscopy (TEM) structural analysis. PL spectra contain exci‐ ton peaks from zincblende (ZB) and wurtzite (WZ) crystal structures of GaAs. The peaks are influenced by the quantum confinement effects. PL bands corresponding to the exciton emission from ZB and WZ crystal phases are identified, relating to the PL peaks at 1.519 eV and 1.478 eV, respectively. The obtained red shift of 41 meV for WZ GaAs should persist in thin NWs as well as in bulk materials. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Wurtzite crystal structure

Crystal (programming language)

10.1002/pssr.201004185

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Citations (29)

Computer simulation of the structure and raman spectra of GaAs polytypes

Physics of the Solid State (2013)

M. B. Smirnov A. O. Koshkin С. В. Карпов B. V. Novikov A. N. Smirnov

Solid-state physics

10.1134/s1063783413060309

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Citations (4)