Guido Schmitz

University of Stuttgart

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Patrick Stender

University of Stuttgart

D. Baither

University of Münster

Z. Balogh

RhySearch (Switzerland)

F. Haider

University of Engineering and Technology Taxila

Efi Hadjixenophontos

Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR)

R. Kirchheim

University of Göttingen

Yug Joshi

University of Stuttgart

Ralf Schlesiger

University of Münster

Robert Lawitzki

University of Stuttgart

S.M. Eich

University of Stuttgart

Cooperative Institutions

University of Stuttgart

112

University of Münster

University of Göttingen

Max Planck Society

Centre National de la Recherche Scientifique

Stuttgart Observatory

Technical University of Munich

Max Planck Institute for Intelligent Systems

Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR)

Max Planck Institute for Solid State Research

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Investigation on the relationship between intermediate temperature embrittlement and intergranular precipitate in Ni(Bi) alloy

Materials & Design (1980-2015) (2011)

Lei Zheng Ralf Schlesiger Mohammed Reda Chellali D. Baither Guido Schmitz

Embrittlement

Ductility (Earth science)

10.1016/j.matdes.2011.07.050

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Citations (7)

Diffusion in Metals and Alloys

Elsevier eBooks (2014)

Z. Balogh Guido Schmitz

Atomic diffusion

Micrometer

Nanometre

10.1016/b978-0-444-53770-6.00005-8

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Citations (74)

Growth kinetics and interface structure of copper silicides studied by atom probe tomography

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2013)

Mohammed Ibrahim Bence Parditka Alexander Fuhrich Z. Balogh Patrick Stender

Abstract Laser‐assisted atom probe shows a unique potential in the analysis of embedded Si/metal interfaces, owing to its ability to deliver 3D information with atomic resolution. The interface structures in tri‐layer specimens Cu/amorphous Si/Cu are investigated by this technique. For amorphous Si (a‐Si) deposited on Cu, a sharp transition occurred with an interface width of 2.4 nm. On the contrary, a much broader mixed zone, 5.3 nm wide, is formed when Cu is deposited on top of a‐Si. Only in the latter case, brief annealing leads to immediate nucleation of the Cu 3 Si. Secondary neutral mass spectrometry confirmed independently the existence of this asymmetry in phase formation and demonstrates linear growth kinetics of the silicide. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Atom probe

10.1002/pssc.201300370

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Citations (7)

Defect analysis by statistical fitting to 3D atomicmaps

Ultramicroscopy (2013)

Z. Balogh Christian Oberdörfer Mohammed Reda Chellali Patrick Stender Susann Nowak

Granularity

Statistical Analysis

Curve fitting

Data set

10.1016/j.ultramic.2012.12.020

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Citations (2)

Reactive Diffusion under Laplace Tension in Spherical Nanostructures

Springer eBooks (2008)

C. Ene Carsten Nowak Guido Schmitz

Spherical shell

Radius of curvature

Nanometre

Deposition

10.1007/978-3-540-85226-1_131

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Ion induced disordering and dissolution of Ni3Al precipitates

Applied Physics Letters (1998)

J. C. Ewert Guido Schmitz F. Harbsmeier M. Uhrmacher F. Haider

The disordering of homogeneous Ni3Al and decomposed Ni(Al) alloys under irradiation with 300 keV Ni58 ions is studied at room temperature. In order to determine the development of the long-range order parameter, electron diffraction patterns are quantitatively evaluated taking into account dynamical diffraction effects. Although postulated by a recent model based on the thermal spike concept, no finite rest order is observed in the high-dose limit. The disordering rate of Ni3Al precipitates is much higher than that of homogeneous Ni3Al which is explained by the additional chemical dissolution of the particles due to ballistic mixing.

Short range order

10.1063/1.122770

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Citations (16)

Interface sharpening in miscible Ni/Cu multilayers studied by atom probe tomography

Applied Physics Letters (2011)

Z. Balogh Mohammed Reda Chellali Gerd-Hendrik Greiwe Guido Schmitz Zoltán Erdélyi

Interfaces of Ni/Cu multilayers were studied by atom probe tomography. To this aim, specimens with sharp or artificially smeared interfaces were prepared and investigated before and after annealing at 773 K. Owing to three-dimensional subnanometer resolution of the atom probe, local chemical analysis of layer interfaces becomes possible without interferences of grain boundaries or geometric roughness. In contrast to the classical expectation for a miscible system, but in agreement with more recent theoretical considerations, diffusion reduces the chemical width of the interfaces by up to 50%.

Atom probe

Sharpening

10.1063/1.3658390

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Citations (25)

Ultra-thin LiPON films – Fundamental properties and application in solid state thin film model batteries

Journal of Power Sources (2014)

Susann Nowak Frank Berkemeier Guido Schmitz

10.1016/j.jpowsour.2014.10.202

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Citations (105)

On the mechanism of diffusion-induced recrystallization: Comparison between experiment and molecular dynamics simulations