Understanding biochemical mechanisms and changes associated with disease conditions and, therefore, development of improved clinical treatments, is relying increasingly on various biochemical mapping and imaging techniques on tissue sections. However, it is essential to be able to ascertain whether the sampling used provides the full biochemical information relevant to the disease and is free from artefacts. A multi-modal micro-spectroscopic approach, including FTIR imaging and PIXE elemental mapping, has been used to study the molecular and elemental profile within cryofixed and formalin-fixed murine brain tissue sections. The results provide strong evidence that amino acids, carbohydrates, lipids, phosphates, proteins and ions, such as Cl(-) and K(+), leach from tissue sections into the aqueous fixative medium during formalin fixation of the sections. Large changes in the concentrations and distributions of most of these components are also observed by washing in PBS even for short periods. The most likely source of the chemical species lost during fixation is the extra-cellular and intra-cellular fluid of tissues. The results highlight that, at best, analysis of formalin-fixed tissues gives only part of the complete biochemical "picture" of a tissue sample. Further, this investigation has highlighted that significant lipid peroxidation/oxidation may occur during formalin fixation and that the use of standard histological fixation reagents can result in significant and differential metal contamination of different regions of tissue sections. While a consistent and reproducible fixation method may be suitable for diagnostic purposes, the findings of this study strongly question the use of formalin fixation prior to spectroscopic studies of the molecular and elemental composition of biological samples, if the primary purpose is mechanistic studies of disease pathogenesis.
Boron doping of polyimide precursors yields films, that when ion irradiated produces high aspect ratio nanowires of 15–25 nm diameter of B substituted ∼4 nm sp2 C-clusters embedded within polyimide as shown by HRTEM, AFM and electrostatic force EFM. XPS confirmed B substitution within the sp2 structures and also showed that the presence of B during the ion induced thermal transformations enhanced N co-substitution, while the G and D Raman bands indicated a high degree of disorder within these C-nanoclusters which increased with atom substitution. Electron transport properties indicated the semiconducting behaviour of the C-nanowire arrays. Impedance spectroscopy separated electron hopping transport within these nanowires from electron tunnelling between neighbouring nanowires. Nanowires were clearly surrounded by an altered polymer interphase region of increased segmental chain mobility and higher dielectric polarisability allowing control of overall electron transport in device applications. This reactive ion beam irradiation route allows separation of chemical doping and synthesis from the nanostructure fabrication, as a new nanotechnology route.
Localization of Hg in root tissues of vetivergrass (Chrysopogon zizanioides) was investigated by micro-Proton Induced X-ray Emission (PIXE) spectrometry to gain a better understanding of Hg uptake and its translocation to the aerial plant parts. Tillers of C. zizanioides were grown in a hydroponic culture for 3 weeks under controlled conditions and then exposed to Hg for 10 days with or without the addition of the chelators (NH(4))(2)S(2)O(3) or KI. These treatments were used to study the effects of these chelators on localization of Hg in the root tissues to allow better understanding of Hg uptake during its assisted-phytoextraction. Qualitative elemental micro-PIXE analysis revealed that Hg was mainly localized in the root epidermis and exodermis, tissues containing suberin in all Hg treatments. Hg at trace levels was localized in the vascular bundle when plants were treated with a mercury solution only. However, higher Hg concentrations were found when the solution also contained (NH(4))(2)S(2)O(3) or KI. This finding is consistent with the observed increase in Hg translocation to the aerial parts of the plants in the case of chemically induced Hg phytoextraction.
lon accelerator based techniques provide unique tools to gain insight into the phenomena underlying the formation of defects induced by energetic particles in semiconductor materials and their effects on the electronic features of the device. In recognition of the potential of these techniques, with the aim of enhancing the understanding of the mechanisms underlying the degradation of the performances of semiconductor devices induced by ionizing radiation, the IAEA established a Research Project, coordinated by the Physics Section (CRP F11016) entitled "Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators" at the end of 2011. The objective of this IAEA Coordinated Research Project (CRP) was to enhance the capabilities of the interested Member States by facilitating their collective efforts to use accelerator-based ion irradiation of electronic materials in conjunction with available advanced characterization techniques to gain a deeper understanding of how different types of radiation influences the electronic properties of materials and devices, leading to an improved radiation hardness. A dynamic and productive research was stimulated by this CRP among collaborating partners, resulting in publications in scientific journals [CRP2016], educational and scientific software packages [W8, Forneris2014], and a number of collaborations among the participating research groups. Two of the most significant outcomes of this project are i) the experimental protocol, which rationalizes the use of the many existing characterization techniques adopted to investigate radiation effects in semiconductor devices and ii) the relevant theoretical approach to interpret the experimental data [Vittone2016 and references therein]. This publication integrates output of research articles published by the partners of the CRP and is aimed to provide an exhaustive description of the experimental protocol, the theoretical model with the relevant limits of application, the data analysis procedure, and the physical observables which can be effectively measured and which can be used for assessment of the radiation hardness of semiconductor devices. The intended audience of this report includes all those professionals and technologists working in ion beam functional analysis of semiconductor materials, solid-state physicists and engineers involved in the design of electronic devices working in radiation harsh environments.