Xingshi Li

Shandong University of Technology

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i-10 index

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Co-Authors

Chengwang Wang

Shandong University of Technology

Yaoguo Huang

Shandong University of Technology

Yuhan Hai

South Central University for Nationalities

Shouxing He

Shandong University of Technology

Zang Baocui

Academia Sinica

Linlin Chen

Jiangsu University

Ziwen Si

Qingdao University of Science and Technology

Ruihan Zhang

Yunnan University

Yali Zhang

Shandong University of Technology

Zhujiu Guo

Cooperative Institutions

Shandong University of Technology

China Medical University

Inner Mongolia University

Academia Sinica

China Coal Technology and Engineering Group Corp (China)

Xiamen University

Hangzhou Dianzi University

ORCID

Nanchang University

Shaanxi Research Design Institute of Petroleum and Chemical Industry

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Synthesis and application of dithiocarbamate oxadiazole thione for flotation separation of malachite from quartz and calcite

Advanced Powder Technology (2023)

Shouxing He Chengwang Wang Zhihui Cheng Xingshi Li Ziwen Si

Malachite

Dithiocarbamate

Malachite green

Oxadiazole

10.1016/j.apt.2023.104315

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Citations (3)

A Novel Chelating Collector with Di-minerophilic Group 5-Methyl Butylxanthate-1,2,4-Triazole-3-Thione: Its Synthesis and Selective Flotation Mechanism of Chalcopyrite from Pyrite

JOM (2024)

Chengwang Wang Ruihan Zhang Xingshi Li Yaoguo Huang Linlin Chen

Xanthate

Chemisorption

10.1007/s11837-024-06422-8

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Citations (1)

<title>Research on amorphous-silicon liquid-crystal light valve and its performance</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1993)

Yuhan Hai Xingshi Li Zang Baocui Guikuen Zheng

Using the amorphous silicon (a-Si:H) film, which is cheap and has a small lag, as the photoconductive layer of the liquid crystal light valve (LCLV) is an ideal selection. With the method of impedance matching, we have designed and fabricated an a-Si:H LCLV and have obtained a clear image on a large screen projection system. The resolution of the valve was 20 lp/mm. The sensitometry measurement showed that the projection light level varies linearly with the writing light level when the latter is below 100 (mu) W/cm². The measurement of the transient response at the writing light level of 100 (mu) W/cm² indicated that the rise time and the decay time were 60 ms and 80 ms, respectively.

Photoconductivity

Crystal (programming language)

Transient (computer programming)

10.1117/12.142066

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Citations (0)

Computer aided design of transmission line system of strong stream relativistic accelerator

Zhujiu Guo Xingshi Li

In the paper, a formula solving the Laplacian equation for the interface between inhomogeneous dielectrics is strictly deduced, and a method of treatment for the special shape boundaries of dielectrics is given. A computer program for an electric field and its breakdown voltage within inhomogeneous dielectrics is composed with a algorithmic language. The program calculates the distribution of the field in a transmission line of a variety of dielectrics and characteristics of the breakdown voltage for a spherical diode. A better agreement between the results of theoretical calculation and experimental ones is reached.

Line (geometry)

10.1109/apmc.1997.656403

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A non-inhibitor flotation process for selective enrichment of chalcopyrite from molybdenite by using 5-methyl diethyl dithiocarbamate-1,3,4-oxadiazole-2-thione

Colloids and Surfaces A Physicochemical and Engineering Aspects (2024)

Shouxing He Xingshi Li Yaoguo Huang Chengwang Wang Ziwen Si

Dithiocarbamate

Molybdenite

Oxadiazole

10.1016/j.colsurfa.2024.134141

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Citations (2)

Development of amorphous silicon liquid crystal light valve

Journal of Electronics (China) (1994)

Yuhan Hai Xingshi Li Zang Baocui

Transient (computer programming)

Photoconductivity

Crystal (programming language)

10.1007/bf02778366

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Citations (0)

Studies on a field-enhanced a-Si:H photoemitter

Journal of Physics D Applied Physics (1995)

Yuhan Hai Xingshi Li

A kind of field-enhanced a-Si:H photoemitter with a sandwich structure of the form of SnO2-n--p a-Si:H-Ag:Cs:O, a low work function surface and an increased photoelectron yield due to the charge-intensifying effect has been designed. First experiments have shown that its quantum yield is 3.9% at wavelength 0.56 mu m and its cut-off wavelength is 0.82 mu m. In this paper, an expression for the quantum yield is deduced from the five-step photoemission process. Then the difference between the experimental results and expected values of the quantum yield is discussed and the way to further increase it is explored. Also, the fact that it is quite possible for the quantum yield to become higher than unity within the visible spectral area is indicated.

Quantum yield

10.1088/0022-3727/28/3/020

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Citations (2)