We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe2) exfoliated from a high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe2 photodetector exhibits high photoresponsivity of 5.11 × 105 A W-1 and high specific detectivity of 2.79 × 1013 Jones under laser irradiation (λ = 450 nm). We also observed a reproducible and stable time-resolved photoresponse to the incident laser beam from this SnSe2 photodetector, which can be used as a promising material for future optoelectronic applications.
We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS2)-based field-effect transistor (FET). The threshold voltage of the MoS2 FET shifted towards more negative values (from -20 to -70 V) on treating with 100% hydrazine solution with the channel current increasing from 0.5 to 25 μA at zero gate bias. The inverse subthreshold slope decreased sharply on doping, while the ON/OFF ratio increased by a factor of 100. Gate-channel coupling improved with doping, which facilitates the reduction of channel length between the source and drain electrodes without compromising on the transistor performance, making the MoS2-based FET easily scalable.
In this paper, we have demonstrated a low temperature hydrogen (H2) sensor based on reduced graphene oxide (rGO) and tin oxide nanoflowers (SnO2 NFs) hybrid composite film. The addition of SnO2 NFs into rGO solution inhibits irreversible restacking and agglomeration of rGO and increases the active surface area for interaction with H2. This rGO-SnO2 NFs hybrid film sensor showed an excellent response to H2 at 60 °C at 200 ppm with an improvement of 126% compared to pure rGO which was used as a control sample. The sensor also showed good response and recovery time in comparison to pure rGO film. The highly improved H2 sensing characteristics of rGO-SnO2 NFs hybrid are due to its (a) unique structural geometry that increased the surface area for H2 adsorption, and (b) change in the width of depletion layer at the interface due to H2 interaction.
We report the simple synthesis of two organic chromophores featuring an ethynyl-thienothiophene linker with an n-hexyl chain (CSD-03 and CSD-04), their optical and electrochemical properties, and their use as photosensitizers in dye-sensitized solar cells (DSSCs). Our theoretical and experimental studies show that adding the second thienothiophene allows for narrowing the bandgap of the molecule and thus ensuring more light harvesting in the visible region. The efficiencies of both CSD-03 (5.46 ± 0.03%) and CSD-04 (5.20 ± 0.03%) are comparable to that of N719 (5.92 ± 0.01%) in translucent DSSCs fabricated with 5 μm-thick TiO2 photoanodes.
In this work, we report on the hydrogen (H2) sensing behavior of reduced graphene oxide (RGO)/molybdenum disulfide (MoS2) nano particles (NPs) based composite film. The RGO/MoS2 composite exhibited a highly enhanced H2 response (∼15.6%) for 200 ppm at an operating temperature of 60 °C. Furthermore, the RGO/MoS2 composite showed excellent selectivity to H2 with respect to ammonia (NH3) and nitric oxide (NO) which are highly reactive gas species. The composite's response to H2 is 2.9 times higher than that of NH3 whereas for NO it is 3.5. This highly improved H2 sensing response and selectivity of RGO/MoS2 at low operating temperatures were attributed to the structural integration of MoS2 nanoparticles in the nanochannels and pores in the RGO layer.
Lateral and vertical two-dimensional heterostructure devices, in particular graphene–MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene–MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene–MoS2 heterostructure.
Edge devices and robots have access to an abundance of raw data that needs to be processed on the edge. Deep neural networks (DNNs) can help these devices understand and learn from this complex data; however, executing DNNs while achieving high performance is a challenge for edge devices. This is because of the high computational demands of DNN execution in real-time. This paper describes and implements a method to enable edge devices to execute DNNs collaboratively. This is possible and useful because in many environments, several on-edge devices are already integrated in their surroundings, but are usually idle and can provide additional computing power to a distributed system. We implement this method on two iRobots, each of which has been equipped with a Raspberry Pi 3. Then, we characterize the execution performance, communication latency, energy consumption, and thermal behavior of our system while it is executing AlexNet.
Molybdenum disulfide (MoS2) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS2 flake are fabricated on hBN and SiO2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS2-SiO2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS2 layer with a single hBN on both the devices. The device to device variations induced by different MoS2 layer is also eliminated by employing a single MoS2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 1011 cm-2 on hBN substrate as compared to 1.1 × 1012 cm-2 on SiO2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS2 FETs.
An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2 , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe2 /MoS2 dual-channel FET.
We fabricated a non-local spin valve with a thin layer of graphite with Co transparent electrodes. The spin-valve effect and spin precession were observed at room temperature. The magnitude of the mangetoresistance increases when temperature decreases. The spin-relaxation time, [Formula: see text], obtained from the fitting of the Hanle curves increases with decreasing temperature with a weak dependence [Formula: see text] while the spin-diffusion constant D decreases. At room temperature, [Formula: see text] exceeds 100 ps and the spin-diffusion length, [Formula: see text], is ∼2 μm. The temperature dependence of [Formula: see text] is not monotonic, and it has the largest value at room temperature. Our results show that multilayer graphene is a suitable material for spintronic devices.
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