Tanmay Potnis

Virginia Tech

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Physics of the Voltage Constant in Multilevel Switching of Conductive Bridge Resistive Memory

Japanese Journal of Applied Physics (2013)

Tong Liu Yu-Hong Kang Sarah El-Helw Tanmay Potnis Marius Orlowski

The multilevel switching of conductive bridge resistive memory is characterized by the ON-state resistance ( R ON ) being inversely proportional to the compliance current ( I CC ). The constant of this relation is shown to be universally correlated to the minimum SET voltage ( V SET(min) ) for all conductive bridge devices. V SET(min) , required to switch the memory from high resistance state to low resistance state, can be extracted using small voltage sweep rates. The correlation has been verified by experiments on Cu/TaO x /Pt devices and confirmed for data on resistive devices reported in the literature. The physical domain of validity for the R ON – I CC relation has been established.

Resistive touchscreen

Constant (computer programming)

Bridge (graph theory)

10.7567/jjap.52.084202

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Citations (32)

Comparison of Resistive Switching between Tantalum Oxides Deposited by Atomic Layer Deposition and E-Beam Physical Vapor Evaporation

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2013)

M. Orłowski Yu-Hong Kang Tong Liu Tanmay Potnis

Abstract not Available.

Deposition

Physical vapor deposition

Resistive touchscreen

Vapour deposition

10.1149/ma2013-01/3/108

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Citations (0)

BSIM4 characterization of current enhancement in short channel s-Si/SiGe NMOS

Abhishek A. Sharma Rohan Shelar Rishkul Kulkarni Apeksha Shenoy Pranit Kalantri

This paper investigates the various effects that affect the I _D -V _DS characteristics in a strained-Si over SiGe NMOSFETs. The modeling is done keeping the BSIM4 parameters as the reference. The model thus developed showed precise agreement with the experimental data. It is observed that mobility in strained silicon increases and thereby enhancing current. Bandgap is affected to a lesser extent, but considerably affects the transfer characteristics. The improved model can serve to aid the development of BSIM MOSFET model by incorporating the discussed parameters for strained-Si over SiGe nMOSFETs.

Silicon-germanium

10.1109/sced.2011.5744192

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Citations (1)

Investigation of Thomson Effect in Cu/TaOx/Pt Resistive Switching Memory

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2013)

Tong Liu Tanmay Potnis Yu-Hong Kang Sarah El-Helw M. Orłowski

Abstract not Available.

Resistive touchscreen

10.1149/ma2013-02/27/2011

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Citations (0)

Comparison of Resistive Switching between Tantalum Oxides Deposited by Atomic Layer Deposition and E-Beam Physical Vapor Evaporation

ECS Transactions (2013)

Yu-Hong Kang Tanmay Potnis Sarah El-Helw Tong Liu M. Orłowski

Performance of Cu/Ta x O y /Pt devices is compared between tantalum oxide deposited by atomic layer deposition (ALD) and electron beam physical vapor evaporation (EBPVD). Formation, set and reset of Cu and oxygen vacancy (V O ) conductive filaments (CF) are evaluated for both dielectrics and related to the respective material properties. XPS data shows that ALD forms a stoichoimetric Ta 2 O 5 , while EBPVD results in oxygen deficient TaO x films. Forming voltages of Cu and Vo CFs for ALD Ta 2 O 5 devices are considerably higher than for EBPVD TaO x devices and its V form , V set , V reset and R on distributions are much tighter than the corresponding distributions for EBPVD TaO x . Overall, ALD Ta 2 O 5 devices outperform those with EBPVD TaO x .

Tantalum nitride

Physical vapor deposition

Deposition

Vapour deposition

10.1149/05322.0065ecst

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Citations (2)

Composite Cu/VO and VO/Cu Nanofilaments in Cu/Ta2O5/Pt Devices

ECS Solid State Letters (2013)

Y. Kang Tong Liu Tanmay Potnis M. Orłowski

Evidence for existence of composite copper/oxygen vacancy nanofilaments is presented. The composite conductive nanofilment (CF) is a serial resistive connection of Cu and Vo CFs forming a composite Vo/Cu CF where the Cu filament segment is formed first and Vo filament completes the composite CF. A composite CF has been also formed in reverse order as Cu/Vo. Both composite CFs, Vo/Cu and Cu/Vo, display Vform at considerable lower voltages than monolithic CFs.

Resistive touchscreen

10.1149/2.004307ssl

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Citations (21)

Investigation of Thomson Effect in Cu/TaO_x/Pt Resistive Switching Memory

ECS Transactions (2013)

Tong Liu Tanmay Potnis Yu-Hong Kang Sarah El-Helw Marius Orlowski

Conductive bridge random access memory (CBRAM) shows strong potential for replacing flash memory on the sub-20 nm technology nodes. The switching mechanism is primarily attributed to the electrochemical formation and rupture of conductive filaments. In Cu/TaO x /Pt devices, high electric current in the RESET process can cause significant local heating. Thomson heating effect has to be considered due to conical or cylindrical filament geometries giving cause for strong temperature gradients. The thermoelectric effect is evaluated for the Cu and oxygen vacancy nanofilaments in bipolar and unipolar switching modes. The Thomson coefficient for oxygen vacancy filament is extracted from the difference of SET voltages between two switching modes.

Reset (finance)

10.1149/05805.0033ecst

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Citations (0)

New Resistive Switching Phenomena in Devices with Limited Active Metal Source

MRS Proceedings (2013)

Mohini Verma Yu-Hong Kang Tanmay Potnis Sushil Khadka Tong Liu

Active layer

Reset (finance)

10.1557/opl.2013.589

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Citations (0)

Conditions for Formation and Rupture of Multiple Conductive Cu and V_OFilaments in a Cu/TaO_x/Pt Device

ECS Transactions (2013)

Yu-Hong Kang Mohini Verma Tanmay Potnis Tong Liu M. Orłowski

In a Cu/TaO x /Pt resistive device multiple copper (Cu) and oxygen vacancy (V O ) conductive nanofilaments (CF) can be formed and ruptured successively between the active Cu and inert Pt electrodes. The key parameters to repeatable multi-bridge switching cycles are an appropriate choice of compliance current window for individual bridge formation and the choice of bipolar and unipolar reset. Controlled formation and rupture of multiple filaments may enable multilevel storage capability in a single CBRAM cell. The investigation of multi-bridge switching points to a new quality of CF called fragility .

Reset (finance)

Bridge (graph theory)

10.1149/05034.0019ecst

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Citations (1)

Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

MRS Proceedings (2013)

Tong Liu Yu-Hong Kang Sarah El-Helw Tanmay Potnis M. Orłowski

Phenomenological model

Resistive touchscreen

10.1557/opl.2013.552

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Citations (2)