P. T. Landsberg

The Open University

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Viorel Bădescu

Universitatea Națională de Știință și Tehnologie Politehnica București

Tom Markvart

University of Southampton

D. A. Evans

Aberystwyth University

C.M. Klimpke

University of Southampton

S. J. Barber

The Open University

A. D. Morse

The Open University

F. A. J. Abernethy

The Open University

Eckehard Schöll

Technische Universität Berlin

S. Sheridan

The Open University

D. J. Robbins

Sylvester Comprehensive Cancer Center

Cooperative Institutions

University of Southampton

The Open University

Centre National de la Recherche Scientifique

European Space Research and Technology Centre

University of Florida

Imperial College London

California Institute of Technology

University College London

Goddard Space Flight Center

National Renewable Energy Laboratory

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Multiple Source Photovoltaics

Springer eBooks (1996)

P. T. Landsberg Alexis De Vos P. Baruch J.E. Parrott

Formalism (music)

10.1007/0-306-46932-4_12

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Citations (3)

Two Relativistic Paradoxes

The Mathematical Gazette (1964)

P. T. Landsberg

It has been argued from time to time [1] that the special theory of relativity is suitable for first year undergraduates reading mathematics or physics at British Universities. The pedagogical value of this subject is considerable, since it introduces conceptual problems, whose solutions require clear thought, but only elementary mathematics . The teaching of this subject can therefore bring about a useful broadening in a student’s intellectual equipment.

Value (mathematics)

Special relativity

10.2307/3613545

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Citations (1)

An efficient macromodel for static CMOS multi-port memories

P. T. Landsberg C. Tretz C. Zukowski

The modelling and design of a six-port CMOS static RAM are described. Due to minimum area constraints imposed by the wiring matrix necessary for addressing, local interconnect, etc. the cell is relatively large; but, as a result, the cell can swing the bit line extremely quickly. The memory system, which is a true multi-port memory system, can be read and written to independently and simultaneously, subject to consistency constraints. A detailed circuit analysis and SPICE circuit simulations of the circuit extracted from a custom layout are presented.

Spice

Port (circuit theory)

10.1109/cicc.1993.590583

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Citations (1)

Thermodynamics makes Progress

Nature (1970)

P. T. Landsberg

10.1038/2251204a0

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Citations (6)

An uncertainty principle for geometry

Nature (2000)

P. T. Landsberg

Riemannian Geometry

Non-Euclidean geometry

Absolute geometry

Synthetic geometry

10.1038/35008137

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Citations (2)

A unified statistical approach to recombination-generation noise in semiconductors

Journal of Physics and Chemistry of Solids (1961)

P. T. Landsberg D. A. Evans

Matrix (chemical analysis)

Auger effect

Stochastic matrix

Density matrix

Admittance

10.1016/0022-3697(61)90285-2

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Citations (4)

Open circuit voltage enhancement in ideal thin solar cells

Tom Markvart P. T. Landsberg

Open-circuit voltage

Source

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Impact Ionization and Auger effects Involving Traps

Birkhäuser Boston eBooks (1980)

D. J. Robbins P. T. Landsberg

In this paper four theoretical models are considered for the discussion of low-field impact ionization and, its inverse process, Auger recombination, involving a single localized level. Four such processes are shown schematically in Table 1, where the corresponding Auger recombination and impact ionization rates are given for non-degenerate statistics. Here, n and p are electron and hole concentrations, nt and pt are concentrations of full and empty traps. The various possibilities are cut down (a) by considering only the process specified by X1 in Table 1, although the present approach can be used for the other processes shown; and (b) by considering the band to be parabolic for energies above the minimum which are of the order of the trap depth, Et. Here the probability P(2') per unit time per unit volume, that a given energetic electron in a band state 2' will impact-ionize a bound state of energy -Et, is discussed. The threshold for such a process lies at the electronic kinetic energy E2 =Et. For any band having the probability of finding a vacancy at states 1 and 2 (see Table 1) of order unity, and in particular for a non-degenerate band, P(2) is independent of the statistical electron distribution in the band. One can then obtain the impact ionization coefficient X 1, and the Auger recombination coefficient T1 by an integration over the states 2′.

Auger effect

10.1007/978-1-4684-9193-7_40

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The Environment of Modern Physics

The Mathematical Gazette (1966)

P. T. Landsberg C. W. Kilmister

10.2307/3614004

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Citations (3)

Statistics of electron emission from InAs/GaAs quantum dots

Materials Science and Engineering C (2005)

Olof Engström P. T. Landsberg Yifeng Fu

Arrhenius plot

10.1016/j.msec.2005.09.048

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Citations (14)