Y. Jugnet

Institut de Recherches sur la Catalyse et l'Environnement de Lyon

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J.C. Bertolini

STMicroelectronics (Italy)

Trần Minh Đức

Thai Nguyen University

F.J. Cadete Santos Aires

Institut de Recherches sur la Catalyse et l'Environnement de Lyon

Marie‐Angélique Languille

Centre National de la Recherche Scientifique

David Loffreda

École Normale Supérieure de Lyon

G. Grenet

Centre National de la Recherche Scientifique

E. Ehret

Institut de Recherches sur la Catalyse et l'Environnement de Lyon

Céline Dupont

Université de Bourgogne

Françoise Delbecq

Université Claude Bernard Lyon 1

H. C. Poon

University of Wisconsin–Milwaukee

Cooperative Institutions

Centre National de la Recherche Scientifique

102

Université Claude Bernard Lyon 1

Institut de Recherches sur la Catalyse et l'Environnement de Lyon

Laboratoire de Chimie

IBM (United States)

École Normale Supérieure de Lyon

Sorbonne Université

Université Paris Cité

IBM Research - Thomas J. Watson Research Center

Lawrence Berkeley National Laboratory

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The oxidation of GaAs(110): A reevaluation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena (1984)

G. Landgren R. Ludeke Y. Jugnet J. F. Morar F. J. Himpsel

Photoemission spectra of 3d core levels excited with synchrotron radiation reveal a multicomponent substructure which increases in complexity with oxygen exposures over the range 106–1014L (langmuir). Spectral changes are already evident for Ga at 104 L, and for As near 106 L. Two oxide components shifted by 0.45 and 1 eV relative to the bulk Ga-3d core level are evident throughout the exposure range, but shift to 0.8 and 1.4 eV for 1014 L. With increasing exposure the As-3d core level develops a sequential set of shifted components at 0.8, 2.3, 3.2, and 4.2 eV relative to the bulk position in GaAs, which are attributed to single through fourfold coordinated bond formation to oxygen. Both surface and bulk-sensitive core spectra reveal a nearly equally intense oxide substructure, which indicates that contrary to previous notions subsurface oxidation is the dominant mechanism throughout the exposure range. The core spectra furthermore indicate preferential Ga oxidation—which suggests that separate Ga and As oxide phases form. Thus the oxidation of GaAs(110) is both spatially and chemically inhomogeneous. Changes in the position of the Fermi energy at the surface correlate well with the initial oxidation of surface sites and the onset of subsurface oxidation near 106 L. A final pinning position of the Fermi energy was not observed.

Substructure

10.1116/1.582823

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Citations (147)

Photoelectron Diffraction and Surface Crystallography

Fundamental and applied catalysis (1994)

Y. Jugnet

10.1007/978-1-4757-9589-9_18

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Citations (2)

X-ray photoelectron diffraction as a tool for clean surface crystallography studies: the Pt(110) (2 × 1) reconstruction

Surface Science Letters (1991)

S. Holmberg H. C. Poon Y. Jugnet G. Grenet Trần Minh Đức

Surface reconstruction

10.1016/0167-2584(91)90012-g

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Surfaces et réactivité

HAL (Le Centre pour la Communication Scientifique Directe) (1997)

Y. Jugnet

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Photoelectron diffraction and surface crystallography

Surface and Interface Analysis (1989)

G. Grenet Y. Jugnet S. Homberg H. C. Poon Trần Minh Đức

Abstract We report here the state of development of photoemission diffraction from core levels as a tool for the investigation of surfaces. Experimental procedures for performing reproducible and accurate photoemission diffraction curves are formulated. To this end, the merit and the limitations in the choice of different parameters, such as photoelectron kinetic energy or detection angles, are discussed in view of various applications. The discussion is largely exemplified from our experiences, as well as from those in the literature.

10.1002/sia.740140613

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Citations (20)

Promoter Effect of Early Stage Grown Surface Oxides: A Near-Ambient-Pressure XPS Study of CO Oxidation on PtSn Bimetallics

The Journal of Physical Chemistry Letters (2012)

Y. Jugnet David Loffreda Céline Dupont Françoise Delbecq E. Ehret

The knowledge of the catalyst active phase on the atomic scale under realistic working conditions is the key for designing new and more efficient materials. In this context, the investigation of CO oxidation on the bimetallic Pt3Sn(111) surfaces by near-ambient-pressure X-ray photoelectron spectroscopy and density functional theory calculations illustrates how combining advanced methodologies allows the determination of the nature of the active phase. Starting from 300 K and 500 mTorr of oxygen, the progressive formation of surface oxides is observed with increasing temperature: SnO, PtO units first, and SnO2, PtO2 units afterward. For CO oxidation on the (2 × 2) surface, the activity gain is assigned to the build-up of ultrathin domains composed of SnO and SnO2 units. The formation of these early stage surface oxides is entirely supported by a density functional theory analysis. More generally, this study demonstrates how the catalyst surface oxidation and transformation can be better controlled by a relevant choice of environmental conditions.

Bimetallic strip

Ambient pressure

10.1021/jz301802g

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Citations (45)

Characterization of complex adsorption structures of multifunctional molecules by joint experimental and theoretical studies: unsaturated aldehydes on Pt(111) and Pt-Sn surface alloys

HAL (Le Centre pour la Communication Scientifique Directe) (2006)

Jan Haubrich David Loffreda Françoise Delbecq Y. Jugnet P. Sautet

Characterization

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Surface crystallography of bulk-grownCoSi2(111) by x-ray photoelectron diffraction

Physical review. B, Condensed matter (1990)

H. C. Poon G. Grenet S. Holmberg Y. Jugnet Trần Minh Đức

The surface termination of the (111) face of a ${\mathrm{CoSi}}_{2}$ bulk crystal is determined through a comparison between experimental results from x-ray photoelectron diffraction and theoretical multiple-scattering calculations for different surface models. It is found that the bulk crystal is terminated by only one Si layer as opposed to epitaxially grown ${\mathrm{CoSi}}_{2}$ films on Si(111) which can exhibit surfaces with one or more Si layers, depending on the epitaxial growth conditions. Confirmation of the results is found through analysis of data from photoelectron diffraction at low photon energy (\ensuremath{\sim}120 eV).

Crystal (programming language)

10.1103/physrevb.41.12735

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Citations (13)

Adsorption du CO et de l'O2 sur des surfaces monocristallines d'or Au(110) et Au(111) : étude in situ par STM et PM-IRRAS

HAL (Le Centre pour la Communication Scientifique Directe) (2005)

Marie‐Angélique Languille F.J. Cadete Santos Aires C. Deranlot Y. Jugnet L. Piccolo

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Surface characterisation and reactivity of a Pd 0.5 monolayer deposit on Ni(110)

Catalysis Letters (1996)