Tao Liu

Fudan University

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Co-Authors

Du Xiang

Fudan University

Yi Cao

Soochow University

Feixia Tan

Fudan University

Zhaogang Dong

Agency for Science, Technology and Research

Kedar Hippalgaonkar

Institute of Materials Research and Engineering

Huajun Liu

ShanghaiTech University

Yunshan Zhao

Nanjing Normal University

Ming Yang

Hong Kong Polytechnic University

Goki Eda

National University of Singapore

Jing Wu

Institute of Materials Research and Engineering

Cooperative Institutions

Fudan University

National University of Singapore

Agency for Science, Technology and Research

Institute of Materials Research and Engineering

University of Electronic Science and Technology of China

Shanghai Fudan Microelectronics (China)

Nanyang Technological University

University of Chinese Academy of Sciences

National Engineering Research Center of Electromagnetic Radiation Control Materials

ShangHai JiAi Genetics & IVF Institute

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Extending in-sensor computing from static images to dynamic motions

Nature Electronics (2023)

Du Xiang Tao Liu

10.1038/s41928-023-01070-3

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Citations (1)

Improving carrier mobility in two-dimensional semiconductors with rippled materials

Nature Electronics (2022)

Hong Kuan Ng Du Xiang Ady Suwardi Guangwei Hu Ke Yang

Electron Mobility

Phonon scattering

Charge carrier

Molybdenum disulfide

Carrier scattering

10.1038/s41928-022-00777-z

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Citations (111)

Fabrication of patternable Janus transition-metal dichalcogenides assisted by electron beam irradiation

Applied Physics Letters (2022)

Zichao Han Tianyao Wei Qingyu Xiao Xinyi Zhong Du Xiang

Two-dimensional Janus transition metal dichalcogenides exhibit intrinsic out-of-plane structural symmetry breaking, which facilitates their applications in spintronics through the enhanced Rashba spin–orbit coupling. Fabrication of Janus structures in a deterministic fashion is essential for their practical heterogeneous integration, which, however, remains challenging in the aspect of material synthesis technology. Here, we demonstrate a synthetic strategy to fabricate Janus WSSe structures at definite positions on its tungsten disulfide (WS2) host through the local electron beam irradiation followed by controllable selenization. We show that the energetic electron flux can significantly modulate the WS2 lattice properties, which locally increase the energy barrier between the WS2 and its Janus counterpart WSSe, thus preventing the irradiated WS2 from being selenized and creating well-defined hetero-boundaries. Moreover, by using monolayer and bilayer WS2 as the hosts, both lateral and vertical heterostructures of WSSe–WS2 can be achieved in a patternable manner. Our work provides a viable route toward the controllable fabrication of the Janus structures for multi-functional spintronics.

Tungsten disulfide

10.1063/5.0095650

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Citations (4)

Fast and robust multilevel optoelectronic memory based on van der Waals heterostructure

Applied Physics Letters (2024)

Tao Liu Yue Wang Yi Cao Feixia Tan Honghong Li

Optoelectronic memory (OEM) has attracted tremendous attention for its great potential to boost the storage capacity of memory chips and break through the von Neumann bottleneck in the post-Moore era. Two-dimensional (2D) van der Waals (vdW) heterostructures, formed by artificially stacking different 2D layered materials, offer tremendous possibilities in OEMs due to their extraordinary capability to integrate and process optical/electrical signals. However, the realization of 2D vdW OEMs with high writing speed and robust memory performance has long been challenging. Here, we report a 2D vdW OEM consisting of tungsten diselenide (WSe2) and hexagonal boron nitride, which functions based on the fast charge transfer dynamics at a 2D interface. The OEM demonstrates high writing speed reaching up to 50 μs, approximately one order of magnitude faster than those of other 2D OEMs. Moreover, the outstanding robustness of such OEM is demonstrated by long retention time exceeding 14 days, together with a broad temperature endurance window from 100 to 420 K. Additionally, through continuously switching laser pulse on the OEM, we achieve 17 distinct current levels (over 4-bit storage) with random access. Our findings envision 2D vdW heterostructure-based OEM as a potential platform to overcome the “memory wall” in the conventional von Neumann configuration and to promote a promising paradigm for big data storage.

Original equipment manufacturer

Robustness

10.1063/5.0188750

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Citations (1)

Anisotropic Strain-Tailoring Nonlinear Optical Response in van der Waals NbOI₂

Nano Letters (2024)

Han Wang Quan Chen Yi Cao Weihui Sang Feixia Tan

Two-dimensional (2D) NbOI2 demonstrates significant second-harmonic generation (SHG) with a high conversion efficiency. To unlock its full potential in practical applications, it is desirable to modulate the SHG behavior while utilizing the intrinsic lattice anisotropy. Here, we demonstrate direction-specific modulation of the SHG response in NbOI2 by applying anisotropic strain with respect to the intrinsic lattice orientations, where more than 2-fold enhancement in the SHG intensity is achieved under strain along the polar axis. The strain-driven SHG evolution is attributed to the strengthened built-in piezoelectric field (polar axis) and the enlarged Peierls distortions (nonpolar axis). Moreover, we provide quantifications of the correlation between strain and SHG intensity in terms of the susceptibility tensor. Our results demonstrate the effective coupling of orientation-specific strain to the anisotropic SHG response through the intrinsic polar order in 2D nonlinear optical crystals, opening a new paradigm toward the development of functional devices.

Lattice (music)

Strain (injury)

Second-harmonic imaging microscopy

Modulation (music)

10.1021/acs.nanolett.4c00039

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Citations (21)

Physical Reservoir Computing Using van der Waals Ferroelectrics for Acoustic Keyword Spotting

ACS Nano (2024)

Yi Cao Zefeng Zhang Bo-Wei Qin Weihui Sang Honghong Li

Acoustic keyword spotting (KWS) plays a pivotal role in the voice-activated systems of artificial intelligence (AI), allowing for hands-free interactions between humans and smart devices through information retrieval of the voice commands. The cloud computing technology integrated with the artificial neural networks has been employed to execute the KWS tasks, which however suffers from propagation delay and the risk of privacy breach. Here, we report a single-node reservoir computing (RC) system based on the CuInP

Reservoir computing

Keyword spotting

10.1021/acsnano.4c06144

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Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes

Nature Electronics (2023)

Hong Kuan Ng Du Xiang Ady Suwardi Guangwei Hu Ke Yang

Molybdenum disulfide

10.1038/s41928-023-01044-5

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Citations (4)

Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes

arXiv (Cornell University) (2023)

Hong Kuan Ng Du Xiang Ady Suwardi Guangwei Hu Ke Yang

In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion.

Linearity

Constant (computer programming)

10.48550/arxiv.2307.07787

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Pulsed current annealing of sputtered amorphous ITO films

Rare Metals (2024)

Qiuli Chen Wangchang Chen Gong Tao Fengxu Fang Shuyao Chen

Indium tin oxide

Figure of Merit

Pulsed laser

10.1007/s12598-024-03078-w

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Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing (Adv. Funct. Mater. 4/2024)

Advanced Functional Materials (2024)

Weihui Sang Du Xiang Yi Cao Feixia Tan Zichao Han

Reconfigurable Logic Gates In article number 2307675, Du Xiang, Peng Zhou, Tao Liu, and co-workers achieve reconfigurable in situ memory of the Boolean logic gates in a single Gaussian transistor. The device is used to implement multiple image processing tasks, with an ultra-low transistor consumption of 13% of the silicon based logic circuits. These findings illustrate the Gaussian transistor as a reliable device architecture to promote the advancement of parallel computing from the hardware level.

10.1002/adfm.202470023

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