M. Füllgrabe

Philipps University of Marburg

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Bernd Ittermann

Physikalisch-Technische Bundesanstalt

F. Kroll

Forschungszentrum Jülich

David A. Peters

University of Westminster

H.‐J. Stöckmann

Philipps University of Marburg

Fu‐Der Mai

Taipei Medical University

H. Ackermann

Goethe University Frankfurt

K. Marbach

Philipps University of Marburg

M. Heemeier

Fritz Haber Institute of the Max Planck Society

P. Meier

University of California, San Diego

H. Thieß

Deggendorf Institute of Technology

Cooperative Institutions

Philipps University of Marburg

Johannes Gutenberg University Mainz

European Organization for Nuclear Research

University of the Witwatersrand

Max Planck Institute for Nuclear Physics

KU Leuven

University of Göttingen

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

ETH Zurich

University of Würzburg

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Defect properties of ion-implanted nitrogen in ZnSe

Physical review. B, Condensed matter (2001)

K. Marbach Bernd Ittermann M. Füllgrabe M. Heemeier F. Kroll

Lattice sites and annealing behavior of implanted ${}^{12}\mathrm{N}$ in semi-insulating ZnSe are investigated by use of \ensuremath{\beta} radiation detected nuclear magnetic resonance (\ensuremath{\beta}-NMR). For room-temperature implantation only a small part of the N impurities is found at sites with full ${T}_{d}$ symmetry; this fraction is attributed to substitutional ${\mathrm{N}}_{\mathrm{Se}}.$ Above 500 K the population of this site increases and saturates at a 10 times higher value for $T>~950\mathrm{K}.$ This increase is assigned to the change of initially interstitial N $({\mathrm{N}}_{i}),$ isolated or part of a complex, to unperturbed ${\mathrm{N}}_{\mathrm{Se}}.$ An activation barrier ${E}_{a}=0.47(5)\mathrm{eV}$ is determined for this process representing an upper limit for the ${\mathrm{N}}_{i}$ migration energy. We do not observe configurations where ${\mathrm{N}}_{\mathrm{Se}}$ is bound to a diamagnetic partner, like the ${(V}_{\mathrm{Se}}{\ensuremath{-}\mathrm{Z}\mathrm{n}\ensuremath{-}\mathrm{N}}_{\mathrm{Se}}{)}^{+}$ complex.

Diamagnetism

Lattice (music)

10.1103/physrevb.63.241201

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Citations (4)

Diffusion parameters of B in Cu determined by β-radiation-detected NMR

Physical review. B, Condensed matter (2001)

M. Füllgrabe Bernd Ittermann H.‐J. Stöckmann F. Kroll David A. Peters

Using \ensuremath{\beta}-radiation-detected nuclear magnetic resonance (\ensuremath{\beta}-NMR) in the special form of cross-relaxation spectroscopy we studied the diffusional behavior of implanted ${}^{12}\mathrm{B}$ nuclei in Cu single crystals at temperatures $T=115--750\mathrm{K}.$ An extended and completely revised dynamic theory of nuclear cross relaxation is developed to analyze the experimental data. Especially the incorporation of (hitherto neglected) spin-lattice relaxation effects turned out to be an important improvement. Applying this formalism we obtain activation energies of ${E}_{a}=0.57(5)\mathrm{eV}$ for the migration of interstitial B, the dominating fraction for $T\ensuremath{\lesssim}400\mathrm{K},$ and of ${E}_{a}=1.15(10)\mathrm{eV}$ for substitutional B formed at higher temperatures. The previously found direct-exchange mechanism for the diffusion of substitutional B in Cu is confirmed by our analysis.

Formalism (music)

Spin diffusion

10.1103/physrevb.64.224302

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Citations (18)

Hyperfine Interactions (2000)

Bernd Ittermann M. Füllgrabe M. Heemeier F. Kroll Fu‐Der Mai

Acceptor

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10.1023/a:1012634505329

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Citations (7)

β-NMR on implanted boron and nitrogen in ZnSe

Journal of Crystal Growth (1998)

Bernd Ittermann K. Marbach G. Welker Edward Diehl M. Füllgrabe

10.1016/s0022-0248(98)80101-2

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Citations (1)

Local structure of implanted B in amorphous Si

Applied Physics Letters (2001)

Fu‐Der Mai Bernd Ittermann M. Füllgrabe M. Heemeier F. Kroll

B 12 probe nuclei are implanted in amorphous Si and monitored by β-radiation-detected nuclear magnetic resonance (β-NMR). Independently of growth conditions and impurity content, we find the same frequency distribution in a variety of samples. This is interpreted as an intrinsic signature of the amorphous environment while preferential B–H pairing is not observed. Comparing our data with earlier B-NMR11 work, we find the local B configuration to be completely controlled by the incorporation process. In our low-dose implantation experiment, all B is fourfold coordinated and electrically active. This is in contrast to gas-phase doping or high-dose implantation where the threefold coordination prevails.

Coordination number

10.1063/1.1384482

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Investigation of Ion-Implanted Boron in Diamond

Materials science forum (1997)

K. Bharuth‐Ram Bernd Ittermann H. Metzner M. Füllgrabe M. Heemeier

10.4028/www.scientific.net/msf.258-263.763

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Citations (1)

Boron implantation doping of diamond

Applied Physics Letters (1997)

Bernd Ittermann K. Bharuth‐Ram H. Metzner M. Füllgrabe M. Heemeier

Spin polarized B12 nuclei were produced in a B11(d,p)12B nuclear reaction and recoil implanted into a type Ib diamond sample at doses below 1011 cm−2. β-radiation detected nuclear magnetic resonance spectra were measured directly after implantation at sample temperatures ranging from 300 to 800 K. The polarization asymmetry at the Larmor resonance yielded fractions of boron ions at sites of full tetrahedral symmetry of 12(1)% at 300 K, increasing to 17(2)% at 800 K. It is argued that these boron atoms are incorporated substitutionally by direct replacement collisions during the implantation process. The resonance spectra also showed additional boron at low-symmetry sites.

Isotopes of boron

10.1063/1.120472

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Spectroscopic characterization of implanted boron in microcrystalline silicon by β-NMR

Physica B Condensed Matter (2001)

Fu‐Der Mai Bernd Ittermann M. Füllgrabe M. Heemeier F. Kroll

Microcrystalline

Characterization

10.1016/s0921-4526(01)00688-3

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Defect reactions of implanted Li in ZnSe observed by β-NMR

Physica B Condensed Matter (2001)

F. Kroll Bernd Ittermann M. Füllgrabe Fu‐Der Mai K. Marbach

10.1016/s0921-4526(01)00858-4

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Citations (3)

Vacancy distribution around isolated implantation sites

Applied Physics Letters (2005)

Bernd Ittermann M. Füllgrabe H.‐J. Stöckmann F. Kroll David A. Peters

Microscopic experimental data on the distribution of vacancies created in isolated implantation events are reported for the model system B in Cu. An interstitial-to-substitutional conversion process of the implanted B12 ions is utilized to detect lattice damage. We observe vacancy clouds with well-defined edges and a mean radius of 13.5(9)nm. The radial profile of the local vacancy concentration never exceeds 10−4; it is almost flat in the central region before it falls off rapidly, a behavior which cannot be explained by simple binary-collision computer models.

Lattice (music)

10.1063/1.2061869

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Citations (1)