Huanli Dong

Chinese Academy of Sciences

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Wenping Hu

Collaborative Innovation Center of Chemical Science and Engineering Tianjin

369

Yonggang Zhen

Beijing University of Chemical Technology

123

Xiaotao Zhang

Tianjin University

115

Lang Jiang

Chinese Academy of Sciences

Zhengsheng Qin

Beijing National Laboratory for Molecular Sciences

Can Gao

Chinese Academy of Sciences

Rongjin Li

Tianjin University

Deyang Ji

Tianjin University

Weigang Zhu

Tianjin University

Liqiang Li

Tianjin University

Cooperative Institutions

Chinese Academy of Sciences

508

University of Chinese Academy of Sciences

321

Beijing National Laboratory for Molecular Sciences

211

Institute of Chemistry

184

Tianjin University

161

Collaborative Innovation Center of Chemical Science and Engineering Tianjin

Tsinghua University

Peking University

University of Science and Technology of China

Zhejiang University

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Copolymers of benzo[1,2-b:4,5-b′]dithiophene and bithiazole for high-performance thin film phototransistors

Journal of Materials Chemistry C (2014)

Yao Liu Qinqin Shi Lanchao Ma Huanli Dong Jiahui Tan

A series of conjugated polymers based on benzo[1,2-b:4,5-b′]dithiophene and bithiazole were systematically investigated for applications of polymer field-effect transistors and thin film phototransistors. Grazing incidence X-ray diffraction and atomic force microscopy were employed to investigate the solid state molecular organization and film morphology. The solution processability, solid state molecular organization, film morphology, charge transport and phototransistor performance can be tuned by elaborately optimizing the polymer backbone and side chains synchronously. For the optimized polymer (P5), a charge-carrier mobility of 0.194 cm2 V−1 s−1, a threshold voltage of −6 V and an on/off current ratio of 106 were achieved. Phototransistors based on this polymer showed a highest photoresponsivity of 132 A W−1 and a photocurrent/dark current ratio of 2 × 105.

Photocurrent

Electron Mobility

10.1039/c4tc01682c

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Citations (25)

High charge mobility polymers based on a new di(thiophen-2-yl)thieno[3,2-b]thiophene for transistors and solar cells

Polymer Chemistry (2015)

Lie Chen Feiyan Wu Zhiqiang Deng Linlin Feng Pengcheng Gu

A novel random copolymer of di(thiophen-2-yl)thieno[3,2-b]thiophene (DTTT) with DPP achieved a high hole mobility of 0.627 cm² V⁻¹ s⁻¹.

Electron Mobility

10.1039/c5py01208b

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Citations (7)

Macromol. Rapid Commun. 8/2011

Macromolecular Rapid Communications (2011)

Huanli Dong Zhishan Bo Wenping Hu

Cover: Thin film phototransistors of a planar conjugated copolymer named HXS-1 were fabricated. All devices exhibited high mobility and stability with on/off ratio up to 4.6×104, indicating the potential applications of the devices in polymer-based optoelectronics. Further details can be found in the Communication by H. Dong, Z. Bo,* and W. Hu* on page 649.

10.1002/marc.201190019

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CCDC 284964: Experimental Crystal Structure Determination

The Cambridge Structural Database (2006)

Huanli Dong Li Xu

An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

Crystal (programming language)

10.5517/cc9kjdr

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CCDC 1482757: Experimental Crystal Structure Determination

The Cambridge Structural Database (2019)

Hui Jiang Peng Hu Jun Ye Yongxin Li Henan Li

10.5517/ccdc.csd.cc1lrxw4

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Citations (0)

CCDC 917692: Experimental Crystal Structure Determination

The Cambridge Structural Database (2013)

Xiaotao Zhang Jakob Kryger Sørensen Xiaolong Fu Yonggang Zhen Guangyao Zhao

10.5517/cczsxzm

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Organic Light‐Emitting Transistors Entering a New Development Stage

Advanced Materials (2021)

Zhengsheng Qin Haikuo Gao Huanli Dong Wenping Hu

Abstract Organic light‐emitting transistors (OLETs) are possibly the smallest integrated optoelectronic devices that combine the switching and amplification mechanisms of organic field‐effect transistors (OFETs) and the electroluminescent characteristic of organic light‐emitting diodes (OLEDs). Such a unique architecture of OLETs makes them ideal for developing the next‐generation display technology and electrically pumped lasers for miniaturized photonic devices and circuits. However, the development of OLETs has been slow. Recently, some exciting progress has been made with breakthroughs in high mobility emissive organic semiconductors, construction of high‐performance OLETs, and fabrication of novel multifunctional OLETs. This recent slew of advances may represent the advent of a new development stage of OLETs and their related devices and circuits. In this paper, a detailed review of these fantastic advances is presented, with a special focus on the key points for developing high‐performance OLETs. Finally, a brief conclusion is provided with a discussion on the challenges and future perspectives in this field.

Organic semiconductor

10.1002/adma.202007149

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Citations (147)

Electrochemical polymerization for two-dimensional conjugated polymers

Journal of Materials Chemistry C (2018)

Qing Zhang Huanli Dong Wenping Hu

This article places special focus on the recent research progress of the EP method in synthesizing CPs. In particular, their potential applications as 2D CPs are summarized, with a basic introduction of the EP method, its use in synthesizing CPs as well as the promising applications of the obtained CPs in different fields. Discussions of current challenges in this field and future research directions are also given.

10.1039/c8tc04149k

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Citations (49)

Single Grain Boundary Break Junction for Suspended Nanogap Electrodes with Gapwidth Down to 1–2 nm by Focused Ion Beam Milling

Advanced Materials (2015)

Ajuan Cui Zhe Liu Huanli Dong Yujin Wang Yonggang Zhen

Single grain boundary junctions are used for the fabrication of suspended nanogap electrodes with a gapwidth down to 1-2 nm through the break of such junctions by focused ion beam (FIB) milling. With advantages of stability and no debris, such nanogap electrodes are suitable for single molecular electronic device construction.

Ion milling machine

10.1002/adma.201500527

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Citations (73)

可控掺杂双极性半导体聚合物应用于简化构筑综合性能优异的有机逻辑电路

Science China Materials (2023)

Jiaxin Yang Shengnan Chen Qingqing Liu Yongshuai Wang Zhagen Miao

Ambipolar diffusion

Organic semiconductor

10.1007/s40843-022-2375-y

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Citations (4)