F. Gomez-Marlasca

Comisión Nacional de Energía Atómica

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Co-Authors

P. Lévy

Consejo Nacional de Investigaciones Científicas y Técnicas

F. Golmar

National University of General San Martín

Mariano Barella

University of Fribourg

G. A. Sanca

National University of General San Martín

M. J. Rozenberg

Laboratoire de physique des Solides

N. Ghenzi

Seoul National University

D. Rubi

Consejo Nacional de Investigaciones Científicas y Técnicas

Pablo Stoliar

National Institute of Advanced Industrial Science and Technology

M. J. Sánchez

Universidad Nacional de Cuyo

Pablo Levy

Comisión Nacional de Energía Atómica

Cooperative Institutions

Consejo Nacional de Investigaciones Científicas y Técnicas

National University of General San Martín

Centre National de la Recherche Scientifique

University of Buenos Aires

Comisión Nacional de Energía Atómica

Centro Atómico Constituyentes

Centro Científico Tecnológico - San Juan

Forschungszentrum Jülich

Universitat Autònoma de Barcelona

Jülich Aachen Research Alliance

Author Statistics

Papers

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Characterization of SiPM performance in a small satellite in low earth orbit using LabOSat-01

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (2024)

Lucas Finazzi Federico Izraelevitch Mariano Barella F. Gomez-Marlasca G. A. Sanca

Characterization

Orbit (dynamics)

Silicon Photomultiplier

10.1016/j.nima.2024.169711

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Citations (0)

Studying ReRAM devices at Low Earth Orbits using the LabOSat platform

Radiation Physics and Chemistry (2018)

Mariano Barella G. A. Sanca F. Gomez-Marlasca W. Román Acevedo D. Rubi

Characterization

Acronym

10.1016/j.radphyschem.2018.07.005

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Citations (10)

Resistance switching in silver – manganite contacts

Journal of Physics Conference Series (2009)

F. Gomez-Marlasca P. Lévy

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature ? a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Manganite

Electromigration

Contact resistance

Electrical contacts

10.1088/1742-6596/167/1/012036

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Citations (5)

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

Journal of Materials Science Materials in Electronics (2020)

C. Acha Mariano Barella G. A. Sanca F. Gomez-Marlasca H. Huhtinen

Resistive touchscreen

Lift (data mining)

10.1007/s10854-020-04190-0

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Citations (3)

Two resistive switching regimes in thin film manganite memory devices on silicon

Applied Physics Letters (2013)

D. Rubi Federico Tesler I. Alposta A. Kalstein N. Ghenzi

Bipolar resistive switching in low cost n-Si/La2/3Ca1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness.

Manganite

Resistive touchscreen

10.1063/1.4826484

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Citations (39)

Asymmetric pulsing for reliable operation of titanium/manganite memristors

Applied Physics Letters (2011)

F. Gomez-Marlasca N. Ghenzi Pablo Stoliar M. J. Sánchez M. J. Rozenberg

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 105 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.

Memristor

Manganite

Reset (finance)

10.1063/1.3565431

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Citations (16)

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

arXiv (Cornell University) (2013)

Pablo Stoliar P. Lévy M. J. Sánchez A. G. Leyva Cecilia Albornoz

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.

Manganite

Resistive touchscreen

Non-Volatile Memory

10.48550/arxiv.1310.3613

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Citations (0)

LabOSat-01: A Payload for In-Orbit Device Characterization

IEEE Embedded Systems Letters (2023)

G. A. Sanca Mariano Barella F. Gomez-Marlasca Nicolás Álvarez P. Levy

LabOSat is an applied research group whose main objective is to increase the technology readiness level of electronic devices and systems for their use in satellite missions. Since 2013 the Group has participated in nine low-Earth orbit missions in collaboration with Satellogic. Its flagship payload, LabOSat-01, is a Source-Measurement-Unit instrument dedicated to the electrical characterization of electronic devices. In this brief communication, results of in-orbit operation of LabOSat-01 are presented. A summary of the Group activities in the period 2013–2022 is also presented. These results represent almost ten years of experience in nine missions hosting different technologies in orbit.

Payload (computing)

Orbit (dynamics)

Earth's orbit

Communications satellite

10.1109/les.2023.3249408

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Citations (2)

Shock Waves and Commutation Speed of Memristors

Physical Review X (2016)

Shao Tang Federico Tesler F. Gomez-Marlasca Pablo Levy V. Dobrosavljević

Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect—the commutation speed.5 MoreReceived 18 November 2014DOI:https://doi.org/10.1103/PhysRevX.6.011028This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasImpedanceShock wavesPhysical SystemsOxidesTransition metalsCondensed Matter, Materials & Applied PhysicsNonlinear Dynamics

Memristor

Commutation

Resistive touchscreen

10.1103/physrevx.6.011028

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Citations (32)

COTS MOS Dosimetry on the MeMOSat Board, Results After 2.5 Years in Orbit

arXiv (Cornell University) (2020)

J. Lipovetzky M. Garcia–Inza Macarena Rodríguez Cañete G. Redin S. Carbonetto

We present the results after 2.5 years in or-bit of Total Ionizing Dose (TID) measurements done using Metal Oxide Semiconductor (MOS) dosimeters on the MeMOSat board. The MeMOSat board was launched on July 19th 2014 at the BugSat-1 "Tita" microsatellite developed by Satellogic to stay at LEO. We used as dosimeters p-channel Commercial Off The Shelf (COTS) MOS transistors with gate oxides of 250~nm. Before launch, a subset of transistors with similar drain current to voltage (I-V)curves where selected from a group of 100 devices. The temperature dependence of the (I-V) curves was studied to find the minimum temperature coefficient biasing point. Then, a calibration subgroup of sensors was irradiated using a $^{60}$Co gamma source to study their response to TID, showing responsivities of $\sim$75~mV/krad when the sensors are irradiated without gate bias. Also, the post irradiation response of the sensors was monitored, in order to include a correction for low dose rate irradiations, yielding 30~mV/krad. A biasing and reading circuit was developed in order to allow the reading of up to 4 sensors.The threshold voltage was monitored during different periods of the mission. After 2.5 years in orbit,the threshold voltage of the sensor mounted on the MeMOSat Board had a V$_\mathrm{T}$ shift of approximately 35~mV corresponds to a dose of 1.2~krads.

Orbit (dynamics)

On board

10.48550/arxiv.2007.00143

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Citations (1)