A. Shah

Lurie Children's Hospital

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J. Meier

Philipps University of Marburg

N. Wyrsch

École Polytechnique Fédérale de Lausanne

U. Kroll

University of Kassel

H. Keppner

HES-SO University of Applied Sciences and Arts Western Switzerland

D. Fischer

Von Ardenne (Germany)

P. Torres

Instituto Geográfico Nacional

S. Dubail

AXON Neuroscience (Slovakia)

E. Vallat‐Sauvain

Oerlikon (Switzerland)

H. Curtins

Platit (Switzerland)

N. Beck

University of Louisville Hospital

Cooperative Institutions

University of Neuchâtel

100

École Polytechnique Fédérale de Lausanne

Swiss Center for Electronics and Microtechnology (Switzerland)

Centre National de la Recherche Scientifique

Czech Academy of Sciences, Institute of Physics

Indian Institute of Science Bangalore

Czech Academy of Sciences

École Normale Supérieure - PSL

Forschungszentrum Jülich

University of Konstanz

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Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD Technique

MRS Proceedings (1989)

Kshem Prasad F. Finger H. Curtins A. Shah James Bauman

Microcrystalline

Glow discharge

Characterization

Deposition

10.1557/proc-164-27

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Citations (27)

Depth profiles of mobility lifetime products and capture cross-sections in a-Si:H

Journal of Non-Crystalline Solids (1991)

N. Wyrsch A. Shah

10.1016/s0022-3093(05)80147-4

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Citations (16)

New stable microwave plasma passivated a-Si MIS cells with high open circuit voltage

Applied Physics A (1988)

J. Meier H. Keppner E. Bücher Peter Münz H. Curtins

Passivation

Open-circuit voltage

10.1007/bf00615134

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Citations (3)

All-digital synchronizers for DPSK demodulators

H. S. Jamadagni B.S. Sonde A. Shah

Maximum a posteriori (MAP) and data transition tracking loop (DTTL) synchronizers are developed for the differential phase shift keying (DPSK) scheme. In their original form, these synchronizers require substantial hardware for their realization. By some simplifications, hardware complexity can be considerably reduced. Simplified all-digital MAP and DTTL synchronizers are suggested. The hardware needed to realize these schemes is not significantly more than that required for the simple early-late scheme. Results of computer simulation studies on all-digital MAP and DTTL synchronizers are given. They not only indicate that the degradation in the bit error rate performance of the demodulator due to these synchronizers is about 0.2 dB, as compared to 1 to 2 dB for the simple early-late scheme, but also that the MAP and DTTL schemes have much lower jitter. Results of an experimental study on microprocessor-based hardware realizations of the synchronizers are given. The circuits developed are suitable for the realization of a digital IC for synchronization as well as in DPSK modems.< >

Realization (probability)

Microprocessor

10.1109/digcom.1990.129377

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Citations (0)

Temperature dependence of the optical absorption coefficient of microcrystalline silicon

Journal of Non-Crystalline Solids (2004)

A. Poruba J. Špringer Ludmila Müllerová Alena Beitlerová M. Vaněček

Microcrystalline

Nanocrystalline silicon

Photocurrent

10.1016/j.jnoncrysol.2004.02.058

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Citations (25)

Influence of substrate on the microstructure of microcrystalline silicon layers and cells

Journal of Non-Crystalline Solids (2002)

J. Bailat E. Vallat‐Sauvain L. Feitknecht C. Droz A. Shah

Microcrystalline

10.1016/s0022-3093(01)01142-5

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Citations (51)

The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon

D. Fischer S. Dubail J. A. Anna Selvan N. Pellaton Vaucher R. Platz

Progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (/spl mu/c-Si:H), as well as on combined a-Si:H//spl mu/c-Si:H stacked "micromorph" solar cells is reported. /spl mu/c-Si:H p-i-n cells with a thickness of 3.6 /spl mu/m, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mA/cm/sup 2/, and a stable efficiency of 7.7%. a-Si:H//spl mu/c-Si:H tandem cells with 13% initial, and with 10% degraded state efficiency are also demonstrated. In addition, methods to further increase the efficiency of combined a-Si:H//spl mu/c-Si:H solar cells are discussed. This includes the introduction of a ZnO reflector layer between a-Si:H and /spl mu/c-Si:H component cells, a new concept of which first experimental results are given.

Microcrystalline

10.1109/pvsc.1996.564311

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Citations (82)

Thin film silicon solar cells for space applications: Study of proton irradiation and thermal annealing effects on the characteristics of solar cells and individual layers

Solar Energy Materials and Solar Cells (2003)

J. Kuendig M. Goetz A. Shah L. Gerlach Emilio Fernández

Microcrystalline

10.1016/s0927-0248(02)00486-5

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Citations (41)

Thin-film silicon solar cells for space applications: radiation hardness and applications for an integrated Solant (solar cell-antenna) module

J. Kuendig M. Goetz X. Niquille A. Shah S. Vaccaro

A new device called "Solant" (for SOLar cell-ANTenna) is presented in this paper. It is a combination of thin-film amorphous silicon solar cells and flat printed antennas. A proton irradiation campaign has also been carried out on a series of n-i-p amorphous and p-i-n micromorph [microcrystalline (/spl mu/c-Si:H) and amorphous (a-Si:H)] silicon tandem solar cells. The effect of thermal annealing on solar cells degraded by proton irradiation is investigated.

Microcrystalline

Plasmonic solar cell

Radiation hardening

10.1109/pvsc.2000.916074

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Citations (6)

Diagnostics of thin-film silicon solar cells and solar panels/modules with variable intensity measurements (VIM)

Solar Energy Materials and Solar Cells (2010)

A. Shah Fanny Sculati‐Meillaud Z. Berényi Omid Madani Ghahfarokhi Rahul Kumar

Equivalent series resistance

Intensity

Value (mathematics)

Silicon solar cell

10.1016/j.solmat.2010.04.070

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Citations (30)