Cheol-Min Lim

The University of Tokyo

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Kasidit Toprasertpong

The University of Tokyo

Mitsuru Takenaka

The University of Tokyo

Shinichi Takagi

The University of Tokyo

Kei Sumita

The University of Tokyo

Won-Ju Cho

Kwangwoon University

Ziqiang Zhao

The University of Tokyo

Chia-Tsong Chen

Tokyo University of Information Sciences

Xueyang Han

The University of Tokyo

Kwang-Won Jo

The University of Tokyo

Schin-ichi Takagi

The University of Tokyo

Cooperative Institutions

The University of Tokyo

Tokyo University of Information Sciences

Bunkyo University

Kwangwoon University

Takenaka (Japan)

Nikki-Universal (Japan)

Korea Research Institute of Bioscience and Biotechnology

National Institute of Advanced Industrial Science and Technology

Centre for Research in Engineering Surface Technology

Japan Science and Technology Agency

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Tensile strain GOI nMOSFET on GOI substrates fabricated by Ge condensation

The Japan Society of Applied Physics (2020)

Kwang-Won Jo Cheol-Min Lim Kasidit Toprasertpong Mitsuru Takenaka Schin-ichi Takagi

Strain (injury)

Tensile strain

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Study on physical origin of electron mobility enhancement of (001) GOI nMOSFET with thinning GOI thickness

The Japan Society of Applied Physics (2020)

Schin-ichi Takagi Kwangwon John Cheol-Min Lim Kasidit Toprasertpong Mitsuru Takenaka

Thinning

Electron Mobility

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High-Performance Microwave-Annealed Indium-Gallium-Zinc Oxide Thin-Film-Transistors with Buried Conductive Layers

Journal of Nanoscience and Nanotechnology (2017)

Cheol-Min Lim Won-Ju Cho

Gallium Oxide

10.1166/jnn.2017.14056

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Citations (5)

Effects of hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process

Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (2019)

Cheol-Min Lim Zhining Zhao Kei Sumita Kasidit Toprasertpong Mikihito Takenaka

2019 International Conference on Solid State Devices and Materials ,Effects of hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process

10.7567/ssdm.2019.n-4-03

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Field-Effect Transistor Biosensor Platform Fused with Drosophila Odorant-Binding Proteins for Instant Ethanol Detection

ACS Applied Materials & Interfaces (2017)

Cheol-Min Lim Jae Young Kwon Won-Ju Cho

Odorant-binding proteins (OBPs) have attracted considerable attention as sensing substrates for the development of olfactory biosensors. The Drosophila LUSH protein is an OBP and is known to bind to various alcohols. Technology that uses the LUSH protein has great potential to provide crucial information through odorant detection. In this work, the LUSH protein was used as a sensing substrate to detect the ethanol concentration. Furthermore, we fused the LUSH protein with a silicon-on-insulator (SOI)-based ion-sensitive field-effect transistor (ISFET) to measure the electrical signals that arise from molecular interactions between the LUSH and ethanol. A dual-gate sensing system for self-amplification of the signal resulting from the molecular interaction between the LUSH and ethanol was then used to achieve a much higher sensitivity than a conventional ISFET. In the end, we successfully detected ethanol at concentrations ranging between 0.001 and 1% using the LUSH OBP-fused ISFET olfactory sensor. The OBP-fused SOI-based olfactory ISFET sensor can lead to the development of handheld sensors for various purposes such as detecting toxic chemicals, narcotics control, testing for food freshness, and noninvasive diagnoses.

ISFET

10.1021/acsami.6b15539

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Citations (20)

Influence of hydrogen ion implantation dose on characteristics of Ge-on-insulator substrates fabricated by smart-cut technology

The Japan Society of Applied Physics (2019)

Cheol-Min Lim Ziqiang Zhao Kei Sumita Kasidit Toprasertpong Mitsuru Takenaka

Hydrogen ion

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Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process

IEEE Journal of the Electron Devices Society (2021)

Cheol-Min Lim Ziqiang Zhao Kei Sumita Kasidit Toprasertpong Mitsuru Takenaka

We have systematically examined electrical characteristics of ultra-thin body (UTB) (111) Ge-on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) fabricated by the smart-cut process and have compared their electrical properties with those of (100) ones. The (111) GOI thickness was varied from 29.4 to 7.3 nm. The normal MOSFET operation of a 7.3 nm-thick (111)-oriented GOI nMOSFET has been demonstrated with a reasonable ON/OFF ratio of 10 ⁴ . However, degradation in the effective electron mobility and subthreshold swing (SS) of the (111) GOI nMOSFETs with decreasing the GOI thickness ( T _GOI ) was observed. Raman analyses and electrical characteristics of GOI nMOSFET under back-gate operation has suggested that a high interface state density at (111) GOI/buried oxide interfaces as well as low GOI film quality near the back interfaces can be an origin of this degradation of the electrical properties with thin body channels.

10.1109/jeds.2021.3085981

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Citations (10)

Microwave annealing, a low-thermal-budget process for dopant activation in phosphorus-implanted MOSFET devices

Journal of the Korean Physical Society (2016)

Cheol-Min Lim Won-Ju Cho

Dopant Activation

10.3938/jkps.69.762

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Design and Implementation of Interference-Immune Architecture for Digital Transponder of Military Satellite

Journal of the Korean Society for Aeronautical & Space Sciences (2014)

Young-wook Sirl Jae-Sun Yoo Gun-Jin Jeong Dae-Il Lee Cheol-Min Lim

현대전에서는 적의 전자기파 공격에 대응하여 안전한 통신 채널을 확보하는 것이 매우 중요하다. 군통신위성 중계기는 차세대 군통신위성에 탑재를 위한 통신 탑재체로써 간섭환경 하에서 지상 터미널 간의 신호를 안전하게 중계하여 전시 통신망을 유지하도록 한다. 본 논문에서 소개하는 위성중계기는 온보드 상에서 부분적인 신호처리를 수행하는데 위성 통신 링크를 저비용으로 제어할 수 있다. 이의 핵심 기능으로써 전송 보안 제어 기능은 통신 링크를 위협하는 간섭 신호에 대한 면역성을 확보한다. 보다 구체적으로 본 논문에서는 전송 보안 제어 기능을 구현하기 위한 효율적인 설계 구조를 소개한다. 핵심 아이디어로써 시분할 형태의 채널 그룹별 제어 코드 생성 및 금지 대역 정보에 대한 소프트웨어 처리 방법으로 전체 하드웨어 복잡도를 현저하게 낮출 수 있음을 설명한다. 생성된 결과 코드가 균등 분포의 임의성을 가짐을 예시하였으며, 우주 인증 시험 결과를 간략히 소개한다. In modern warfare, securing communication channel by combatting opponents' electromagnetic attack is a crucial factor to win the war. Military satellite digital transponder is a communication payload of the next generation military satellite that maintains warfare networks operational in the presence of interfering signals by securely relaying signals between ground terminals. The transponder in this paper is classified as a partial processing transponder which performs cost effective secure relaying in satellite communication links. The control functions of transmission security achieve immunity to hostile interferences which may cause malicious effects on the link. In this paper, we present an efficient architecture for implementing the control mechanism. Two major ideas of pipelined processing in per-group control and software processing of blocked band information dramatically reduce the complexity of the hardware. A control code sequence showing its randomness with uniform distribution is exemplified and qualification test results are briefly presented.

Transponder (aeronautics)

Communications satellite

Payload (computing)

Command and Control

10.5139/jksas.2014.42.7.594

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Improvement of material quality of (100) and (111) Ge-on-insulator substrates fabricated by smart-cut technology

2019 Electron Devices Technology and Manufacturing Conference (EDTM) (2019)

Cheol-Min Lim Mitsuru Takenaka Shinichi Takagi

Physical and electrical characteristics of (111) Ge-on-insulator (GOI) substrates fabricated by the smart-cut technology and the dependence of annealing temperature are studied in comparison with those of (100) GOI. Annealing at 550 °C can minimize defects generated by the smart-cut process without causing thermal damages for both (111) and (100) GOI. (111) GOI pMOSFETs exhibit the high field-effect mobility of 425 cm ² /Vs under back gate operation, suggesting the high GOI material quality.

10.1109/edtm.2019.8731205

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Citations (1)