Haoxin Huang

City University of Hong Kong

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Chaoliang Tan

City University of Hong Kong

Jiajia Zha

City University of Hong Kong

Yunpeng Xia

City University of Hong Kong

Ye Chen

Chinese University of Hong Kong

Peng Yang

Shenzhen University

Huide Wang

Shenzhen University

Ying Yan

Beihang University

Johnny C. Ho

City University of Hong Kong

Zhuomin Zhang

City University of Hong Kong

Huiping Zhang

Institute of Geology, China Earthquake Administration

Cooperative Institutions

Shenzhen University

City University of Hong Kong

Chinese Academy of Sciences

University of Hong Kong

South China University of Technology

University of Chinese Academy of Sciences

Zhejiang University

Soochow University

Southern University of Science and Technology

State Council of the People's Republic of China

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Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se_xTe_1–x Nanosheets for p-Type Transistors and Inverters

ACS Nano (2024)

Haoxin Huang Jiajia Zha Songcen Xu Peng Yang Yunpeng Xia

Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1–x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1–x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se–Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1–x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V–1·s–1, being eight times higher than thermally evaporated SexTe1–x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V.

Deposition

10.1021/acsnano.4c05323

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Citations (5)

A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Advanced Materials (2023)

Jiajia Zha Yunpeng Xia Shuhui Shi Haoxin Huang Siyuan Li

The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈10

Neuromorphic engineering

Reservoir computing

Non-Volatile Memory

10.1002/adma.202308502

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Citations (28)

Preparation of Dye Molecule‐Intercalated MoO₃ Organic/Inorganic Superlattice Nanoparticles for Fluorescence Imaging‐Guided Catalytic Therapy

Small (2022)

Tingting Hu Qian Liu Zhan Zhou Wei Zhao Haoxin Huang

Abstract Intercalation of organic molecules into the van der Waals gaps of layered materials allows for the preparation of organic/inorganic superlattices for varying promising applications. Herein, the preparation of a series of dye molecule/MoO 3 organic/inorganic superlattice nanoparticles by aqueous intercalation of several dye molecules into layered MoO 3 for fluorescence imaging‐guided catalytic therapy is reported. The long MoO 3 nanobelts are treated by ball milling and subsequent aqueous intercalation followed by a cation ion exchange to obtain the dye molecule‐intercalated MoO 3 organic/inorganic superlattices. Importantly, because of the activation induced by organic intercalation, the Nile blue (NB)‐intercalated MoO 3‐ x (NB‐MoO 3‐ x ) nanoparticles show excellent catalytic activity for the generation of reactive oxygen species, that is, hydroxyl radical (·OH) and superoxide anion (·O 2 − ), through catalyzing H 2 O 2 and O 2 , respectively. Moreover, the intense fluorescence of the intercalated NB molecules endows NB‐MoO 3‐ x with the in vivo fluorescence imaging capability. Thus, the polyvinylpyrrolidone‐modified NB‐MoO 3‐ x nanoparticles can be used for tumor‐specific catalytic therapy to realize efficient cancer cell elimination in vitro and fluorescence imaging‐guided tumor ablation in vivo.

10.1002/smll.202200595

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Citations (32)

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Nano-Micro Letters (2022)

Peng Yang Jiajia Zha Guoyun Gao Long Zheng Haoxin Huang

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V-1 s-1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility .

Dangling bond

Electron Mobility

Tellurium

10.1007/s40820-022-00852-2

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Citations (48)

Corrigendum to “Preparation of structured N-CNTs/PSSF composite catalyst to activate peroxymonosulfate for phenol degradation” [Sep. Purif. Technol. 290 (2022) 120903]

Separation and Purification Technology (2022)

Xiangyang Tian Haoxin Huang Huiping Zhang Ying Yan

Degradation

10.1016/j.seppur.2022.121499

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Citations (2)

Electronic/Optoelectronic Memory Device Enabled by Tellurium‐based 2D van der Waals Heterostructure for in‐Sensor Reservoir Computing at the Optical Communication Band

Advanced Materials (2023)

Jiajia Zha Shuhui Shi Apoorva Chaturvedi Haoxin Huang Peng Yang

Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.

10.1002/adma.202211598

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Citations (81)

CO₂ Hydrate Formation Promoted by a Natural Amino Acid l‐Methionine for Possible Application to CO₂ Capture and Storage

Energy Technology (2017)

Yuanhao Cai Yulong Chen Qijie Li Liang Li Haoxin Huang

Abstract We demonstrate that l ‐methionine, a natural amino acid, can be used to dramatically enhance CO 2 uptake kinetics in the formation of CO 2 hydrate without the use of energy‐intensive mixing technologies or environmentally harmful chemicals. To the best of our knowledge, l ‐methionine is the most effective promoter to enhance CO 2 hydrate formation (at a concentration of 0.2 wt %, the gravimetric capacity reached up to 356 mg g −1 in 1000 min, and t 90 (the time to achieve 90 % of this capacity) was only 15 min). We also present a tentative explanation for the promotion mechanism of l ‐methionine in the formation of CO 2 hydrate from the point of view of structure–property relationship that will help search for more effective promoters. Our results may offer the possibility of practical application of hydrate‐based CO 2 capture and storage technology.

Clathrate hydrate

Gravimetric analysis

10.1002/ente.201600731

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Citations (122)

Surfactant‐Free Ultrasonication‐Assisted Synthesis of 2d Tellurium Based on Metastable 1T'‐MoTe₂

Advanced Materials (2023)

Junlei Qi Yongping Dai Chen Ma Chengxuan Ke Wenbin Wang

Elemental 2D materials (E2DMs) have been attracting considerable attention owing to their chemical simplicity and excellent/exotic properties. However, the lack of robust chemical synthetic methods seriously limits their potential. Here, a surfactant-free liquid-phase synthesis of high-quality 2D tellurium is reported based on ultrasonication-assisted exfoliation of metastable 1T'-MoTe

Tellurium

Sonication

Metastability

10.1002/adma.202306962

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Citations (5)

Iron-loaded carbon nanotube-microfibrous composite for catalytic wet peroxide oxidation of m-cresol in a fixed bed reactor

Environmental Science and Pollution Research (2019)

Yi Yang Huiping Zhang Haoxin Huang Ying Yan Xinya Zhang

Cresol

Peroxide

Degradation