Maruthi Nagavalli Yogeesh

The University of Texas at Austin

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Deji Akinwande

The University of Texas at Austin

Sanjay K. Banerjee

The University of Texas at Austin

Saungeun Park

The University of Texas at Austin

Atresh Sanne

The University of Texas at Austin

Yuebing Zheng

The University of Texas at Austin

Rudresh Ghosh

The University of Texas at Austin

Weinan Zhu

The University of Texas at Austin

Amritesh Rai

The University of Texas at Austin

Hsiao‐Yu Chang

The University of Texas at Austin

R. A. Rao

Analog Devices (United States)

Cooperative Institutions

The University of Texas at Austin

Walker (United States)

Chinese Academy of Sciences

University of Massachusetts Amherst

University of Illinois Urbana-Champaign

Nanjing University

Zhejiang University

University of Science and Technology of China

University of Chinese Academy of Sciences

Shanghai Jiao Tong University

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Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

Nano Letters (2015)

Weinan Zhu Maruthi Nagavalli Yogeesh Shixuan Yang Sandra Hernandez-Aldave Joon‐Seok Kim

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

Ambipolar diffusion

Electron Mobility

10.1021/nl5047329

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Citations (411)

Laser-directed “bubble-pen” for nanoparticle patterning

Conference on Lasers and Electro-Optics (2016)

Linhan Lin Xiaolei Peng Zhangming Mao Wei Li Maruthi Nagavalli Yogeesh

Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text L. Lin, X. Peng, Z. Mao, W. Li, M. N. Yogeesh, B. B. Rajeeva, E. P. Perillo, A. K. Dunn, D. Akinwande, and Y. Zheng, "Laser-directed "bubble-pen" for nanoparticle patterning," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper ATu4K.3. Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article

10.1364/cleo_at.2016.atu4k.3

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Large area fabrication of graphene nanoribbons by wetting transparency-assisted block copolymer lithography

Polymer (2016)

Reika Katsumata Maruthi Nagavalli Yogeesh Helen Wong Sunshine X. Zhou Stephen M. Sirard

Nanosphere lithography

10.1016/j.polymer.2016.12.034

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Advancements in 2D flexible nanoelectronics: from material perspectives to RF applications

Flexible and Printed Electronics (2017)

Weinan Zhu Saungeun Park Maruthi Nagavalli Yogeesh Deji Akinwande

In the past decade, two-dimensional (2D) atomic crystals have stimulated great interest in the electronic device community for their interesting physics and diverse applications. With the rapid growing market of wearable electronics and the internet of things, flexible nanoelectronics with high operation speed and low power consumption has become one of the most researched topics. In this regard, 2D atomic van der Waals crystals have emerged as promising candidates for such applications owing to their compelling capabilities including ultimate thickness scalability, superior mechanical flexibility and highly tunable electronic performance. In this review, state-of-the-art advancements in 2D flextronics based on chemical vapor deposition (CVD) monolayer graphene, CVD monolayer molybdenum disulphide (MoS2) and exfoliated few layer black phosphorus are presented with specific emphasis on radio frequency applications.

Nanoelectronics

Flexible Electronics

Black Phosphorus

10.1088/2058-8585/aa84a4

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Characterization and sonochemical synthesis of black phosphorus from red phosphorus

2D Materials (2016)

Sandra Hernandez-Aldave Maruthi Nagavalli Yogeesh Weinan Zhu Joon‐Seok Kim Sushant Sonde

Phosphorene is a new two-dimensional material which is commonly prepared by exfoliation from black phosphorus bulk crystals that historically have been synthesized from white phosphorus under high-pressure conditions. The few layers of phosphorene have a direct band gap in the range of 0.3–2 eV and high mobility at room temperature comparable to epitaxial graphene. These characteristics can be used for the design of high speed digital circuits, radio frequency circuits, flexible and printed systems, and optoelectronic devices. In this work, we synthesized black phosphorus from red phosphorus, which is a safer solid precursor, using sonochemistry. Furthermore, via a variety of microscopy and spectroscopy techniques, we report characterization results of the sonochemically synthesized black phosphorus in addition to the commercial black phosphorus. Finally, we describe the air stability of black phosphors and the crystalline structure of the synthesized material. This is the first result of sonochemical or solution-based synthesis of black phosphorus based on readily available low-cost red phosphorus. This solution-based synthesis of black phosphorus is suitable for printable applications of nanomaterial.

Phosphorene

Exfoliation joint

Black Phosphorus

Nanomaterials

Characterization

10.1088/2053-1583/3/1/014007

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Citations (62)

Radio Frequency Transistors and Circuits Based on CVD MoS₂

Nano Letters (2015)

Atresh Sanne Rudresh Ghosh Amritesh Rai Maruthi Nagavalli Yogeesh S. H. Shin

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm2/(V s) was achieved. Radio frequency FETs were fabricated in the ground–signal–ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of −15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Transconductance

Cutoff frequency

10.1021/acs.nanolett.5b01080

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Citations (149)

A 70–95 GHz SiGe downconverter IC for large-N focal plane arrays

2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 (2014)

Joseph C. Bardin Maruthi Nagavalli Yogeesh N. R. Erickson Gopal Narayanan

The design, packaging, and characterization of a 70-95 GHz downconverter with 25 GHz of instantaneous bandwidth is presented. The circuit features a novel LO pass-through feature, making it suitable for integration in two-dimensional focal plane arrays with large-N. The chip has been packaged in a waveguide module and, in the packaged configuration, has a noise temperature below 2000 K (9 dB NF) and greater than 23 dB conversion gain, 8 dB input return loss, and 13 dB output return loss over the entire frequency range. The circuit operates with an LO power of just -5 dBm and has a DC power consumption of 170 mW.

Return loss

10.1109/mwsym.2014.6848508

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Flexible graphite antennas for plastic electronics

Maruthi Nagavalli Yogeesh Kristen N. Parrish Deji Akinwande

In this paper we report on the simulation, fabrication, and characterization of planar graphite antennas on flexible polyimide (kapton) substrate, operating in the ISM band. The patch antennas are constructed from pyrolytic graphite sheets adhered to the flexible substrate, and designed to resonate at 2.4 GHz. Simulation and measurements show that the antenna is relatively immune to changes in impedance match induced by bending, although the gain is adversely affected by several dB. For the first time, single-port convex bending measurement is performed on these graphite antennas, revealing only minimal change in resonant frequency as the antenna is bent, and little to no memory effect from the induced curvature. We conclude by showing the possibility of fabrication of an all carbon-based RF receiver.

Kapton

Pyrolytic carbon

10.1109/icemelec.2014.7151166

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State-of-the-art large area CVD MoS<inf>2</inf> based RF electronics

Maruthi Nagavalli Yogeesh Atresh Sanne Saungeun Park Hsiao‐Yu Chang Rudresh Ghosh

In this work we demonstrate state-of-the-art large area monolayer CVD M0S2 based RF transistors on both flexible and Si substrates. We report the highest RF performance (fT ~ 5.9GHz and fmax ~ 3.3GHz) among flexible MoS2 based thin film transistors. Our embedded gate CVD MoS2 transistors on CMOS compatible Si substrates shows record fT~ 20GHz, fmax ~ 11.4GHz, and saturation velocity vsat ~ 1.88-106 cm/s. We also present the design of MoS2 based RF circuits (GHz amplifier and flexible wireless AM receiver).

10.1109/icemelec.2016.8074593

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Flexible low-power RF nanoelectronics in the GHz regime using CVD MoS2

Bulletin of the American Physical Society (2016)

Maruthi Nagavalli Yogeesh

Nanoelectronics

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