Valerii V. Uzdovskii

National Research University of Electronic Technology

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Vladimir I. Khainovskii

National Research University of Electronic Technology

ЕА

Е. А. Денисова

Siberian Federal University

E. B. Volodin

Moscow State Institute of Electronics and Mathematics

ЕА

Е. А. Игнатьева

Far Eastern Scientific Centre of Physiology and Pathology of Respiration Russian Academy of Medical Sciences

V. P. Sondaevskii

Moscow State Institute of Electronics and Mathematics

ОН

О. Н. Сафронова

Ministry of Health of the Russian Federation

Elena A. Ignatjeva

Moscow State Institute of Electronics and Mathematics

A. A. Komarnitskii

Moscow State Institute of Electronics and Mathematics

V. N. Kukin

National Research University of Electronic Technology

АК

А. К. Звездин

Prokhorov General Physics Institute

Cooperative Institutions

Moscow State Institute of Electronics and Mathematics

National Research University of Electronic Technology

Russian Academy of Sciences

Far Eastern Scientific Centre of Physiology and Pathology of Respiration Russian Academy of Medical Sciences

Siberian Federal University

Krasnoyarsk Scientific Center

Institute of Physics

Dubna State University

Siberian State Technological University

Siberian Branch of the Russian Academy of Sciences

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Numerical simulation of photoelectrical characteristics of the spectrozonal three-channel bulk charge-coupled device

Optical Engineering (1997)

Valerii V. Uzdovskii

A one-dimensional physical model of a linear three-channel bulk charge-coupled device (BCCD) with a surface n channel and bulk channels of n- and p-type conductivity is considered. The system of three nonlinear differential equations describing the process of BCCD photorelaxation is obtained. On the basis of these equations, the numeri- cal simulation of the process of photorelaxation under the influence of the absorption of optical radiation with uniform spectral intensity charac- teristic (0.4

10.1117/1.601364

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Citations (7)

Study of photoelectric spectroselective multichannel photocells for photodetectors based on the bulk integrated p-n junctions

Е. А. Денисова Vladimir I. Khainovskii Valerii V. Uzdovskii

The study of the photoelectrical processes in the photosensitive structures based on multichannel bulk integrated p-n junctions is presented in this paper. The distribution of electrical potential and intensity of the electrical field, as well as absorption of the optical radiation in the spatial charge region (SCR) multichannel bulk integrated structure are considered. The processes of photorelaxation, charge accumulation and spectral characteristics of the photosensitivity in the bulk integrated n- and p- areas in photosensitive structures are studies. The design parameters of semiconductor layers and permissible values of control voltages have been obtained. Noise characteristics and circuit features of the photosensitive cell with bulk integrated p-n junctions are considered.

Photoelectric effect

Photoresistor

Photosensitivity

Photodiode

10.1109/edm.2010.5568750

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Citations (0)

Noise in Spectrozonal Multichannel Photocells for Image Converters with Color Separation and Vertically Integrated p−n Junctions

Semiconductors (2017)

Е. А. Денисова Valerii V. Uzdovskii Vladimir I. Khainovskii

Photoresistor

Photodiode

SIGNAL (programming language)

Image intensifier

Luminous flux

10.1134/s106378261713005x

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Effect of four-l ayer parameters on the rate of the current filament motion in a transverse magnetic field

physica status solidi (a) (1992)

А. К. Звездин V. P. Sondaevskii Valerii V. Uzdovskii

The rate of the current filament motion in view of recharging the capacities of the emitter and collector junctions is calculated. The dependence of motion rate on the material parameters and dimensions of the four-l ayer structure bases is obtained. Es wird die Geschwindigkeit der Stromfadenbewegung im Hinblick auf die Entladung der Kapazitäten der Emitter- und Kollektorübergange berechnet. Die Abhängigkeit der Bewegungsrate von den Materialparametern und -dimensionen der Vierschichtstruktur-B asis wird erhalten.

10.1002/pssa.2211300128

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Photoelectrical processes in spectroselective photocells for matrix photoreceivers based on five bulk integrated p-n-junctions

International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (2009)

Е. А. Денисова Vladimir I. Khainovskii Valerii V. Uzdovskii

Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.

Photoresistor

Matrix (chemical analysis)

Spectral Properties

Spectral composition

10.1109/edm.2009.5174022

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Experimental investigations of the electrical and photoelectrical characteristics of the two-channel bulk charge-coupled device

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1995)

Vladimir I. Khainovskii Valerii V. Uzdovskii

The electric characteristics of the linear two-channel bulk charge coupled device (BCCD) with an n-type surface channel and p-type bulk channel of conductivity, located one under another, have been investigated experimentally. The device has sixteen elements of decomposition. THe four-step diagram of control boltage pulses, providing synchronous contrary transfering of charge packages in the channels, has been used. The method of electron holding in the surface channel by the dc voltage of value approximately (- 10.5 divided by 11V) on the lateral electrodes has been proposed. The amplitude of negative control voltage pulses has varied in the interval 0 divided by - 20V with 99.76% of the efficiency of charge transferring at the frequency of 75 kHz in the both channels. In photoelectric measurements the essentially different spectral characteristics of BCCD channel photosensitivities have been found. The maximum of the n-channel photosensitivity falls on the approximately 0.75 micrometers wave length. In general, the principle possibility of a spectrozonal phototransformer creation based on the two-channel BCCD has been shown experimentally.

Photoelectric effect

Band diagram

10.1117/12.218629

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Citations (0)

Spectroselective photo cell for color separation image converters with vertically integrated p-n-junctions

Е. А. Денисова Vladimir I. Khainovskii Valerii V. Uzdovskii

Study of the photoelectrical processes in the photosensitive structures based on multichannel bulk integrated p-n junctions presented in this work. In this work were studying the distribution of the electrical potential and the tension of the electrical field and the absorption of the optical radiation in the space charge region (SCR) n-p-n-p structure also were made in this work. It were studying the processes of the charge accumulation and spectral characteristics of the photosensitivity's in the bulk integrated n- and p-type photosensitive structures and were received constructive parameters of the semiconductor layers and permitted values of the directed voltages and the values of the noise characteristics and schema-technical peculiarities of the photosensitive cell were under consideration.

Photosensitivity

10.1109/eiconrus.2017.7910825

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Simulation of Limited-Small Single-Contact Photodetector of Visible Range with Vertical Colour Division Integrated into Infrared Photodetector Cell Gap

International Siberian workshops and tutorials on electron devices and materials (2007)

E. B. Volodin Elena A. Ignatjeva Valerii V. Uzdovskii

This article represents the results of simulation of bulk integrated, minimized in size photosensitive cells with bulk colour division (R, G, B) of the visible spectral range, having one terminal displaced, due to the absence of the area, together with transistors of reading circuits (and partially under them) in gaps of infrared detector cells into CMOS structure. Single-contact three-color cell has an additional channel through which photodiodes may exchange current carriers due to the appropriate voltage applied to the surface contact and common for all the cells base and thus transfers accumulated charges to reading circuits.

Photodiode

Biasing

10.1109/sibedm.2007.4292930

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Citations (0)

Simulation and optimization of the CMOS structure with vertically integrated single-contact photodetectors with separation of colors in the visible spectral region

Semiconductors (2008)

E. B. Volodin Е. А. Игнатьева Valerii V. Uzdovskii

10.1134/s1063782608130162

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Citations (3)

Photoelectric processes in a five-diode vertically integrated spectrally selective photocell