Yonghai Chen

Chinese Academy of Sciences

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Zhanguo Wang

Chengdu University

Jinling Yu

Fuzhou University

Shuying Cheng

Fuzhou University

Yu Liu

University of Copenhagen

Yunfeng Lai

Fuzhou University

Laipan Zhu

Beijing Institute of Nanoenergy and Nanosystems

Xiaolin Zeng

Institute of Semiconductors

Ke He

Tsinghua University

Bo Xu

People's Liberation Army 401 Hospital

Caihong Jia

Henan University

Cooperative Institutions

Chinese Academy of Sciences

217

Institute of Semiconductors

137

University of Chinese Academy of Sciences

109

Peking University

Nanjing University

Fuzhou University

University of Science and Technology of China

Tsinghua University

Collaborative Innovation Center of Advanced Microstructures

Jilin University

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Chiral optical modulation of Si-Ge2Sb2Te5 composite metasurfaces driven by quasibound states in the continuum

Applied Optics (2024)

Can Chen Jinling Yu Chen Kang Yonghai Chen Yunfeng Lai

Modulation (music)

10.1364/ao.536880

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Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

Yonghai Chen Chenguang Tang Bo Xu Peng Jin Zhanguo Wang

The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540°C.

Wetting layer

Indium arsenide

10.1109/icsict.2008.4734643

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Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system

Applied Physics Letters (2011)

C. H. Jiang Hui Ma Jinling Yu Yu Liu Yonghai Chen

In this letter, we studied the polarization dependent current excited by near- and mid-infrared radiations in InAs nanowires patterned quasi two-dimensional structures. We observed a current with a predominated direction along the wires at normal incidence of mid-infrared radiation and attributed it to the ratchet effect. Photogalvanic effect induced by obliquely incident excitation is also observed. Under near-infrared excitation, however, the normal incident ratchet effect becomes insignificant and the linear photogalvanic effect at oblique incidence dominantly contributes to the electric current.

Ratchet effect

10.1063/1.3610966

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Citations (1)

Temperature dependence of circular photogalvanic effect in GaAs/Al_0.3Ga_0.7As two-dimensional electron system

Journal of Physics Conference Series (2012)

Hui Ma C. H. Jiang Yu Liu Jinling Yu Yonghai Chen

Structure inversion asymmetry (SIA) related circular photogalvanic effect (CPGE) has been investigated under near-infrared radiation at temperatures ranging from 80 K to 290 K in GaAs/Al0.3Ga0.7As heterostructures. The result shows nonmonotonic changes of CPGE with temperature variation; obviously larger signal at low temperature and sign inversions in the temperature range between 140 K and 170 K are observed. We suggest this result is not only related to the photoconductivity and Rashba spin splitting, but other factors superpose on them.

10.1088/1742-6596/400/4/042041

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Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence

Chinese Physics B (2014)

Jie Zhang Jinling Yu Shuying Cheng Yunfeng Lai Yonghai Chen

The mode splitting induced by electro-optic birefringence in a P—I—N InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser (VCSEL) has been studied by polarized electroluminescence (EL) at room temperature. The polarized EL spectra with E || [110] and E || [10] directions, are extracted for different injected currents. The mode splitting of the two orthogonal polarized modes for a VCSEL device is determined, and its value increases linearly with the increasing injected current due to electro-optic birefringence. This article demonstrates that the polarized EL is a powerful tool to study the mode splitting and polarization anisotropy of a VCSEL device.

Vertical-cavity surface-emitting laser

10.1088/1674-1056/23/2/027304

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Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells*

Chinese Physics Letters (2019)

Xiaodi Xue Yu Liu Laipan Zhu Wei Huang Yang Zhang

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices .

Photocurrent

10.1088/0256-307x/36/7/077201

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Infrared passbands from fractal slit patterns on a metal plate

Applied Physics Letters (2003)

Weijia Wen Z. Yang Gu Xu Yonghai Chen Lei Zhou

We show that a fractal pattern of submicron wide slits, etched on a 0.1-μm-thick gold film, exhibit multiple pass and stop bands in the wavelength regime of 2–200 μm. In the midinfrared regime, the passbands show ∼36% transmission (three orders of magnitude higher than the reference), and the stop bands exhibit ∼80% reflection. In the far infrared regime, the passband transmittances are 25%, 29%, and 14%, respectively, at wavelengths of 34, 62, and 111 μm. These transmittances are rather high in view of the fact that supporting substrate is itself only about 40% transmitting, and a control pattern of holes with similar void-to-metal ratio is 3000 times less transmitting in all frequencies. We attribute the high transmittance from subwavelength slits to geometric resonances.

Passband

Reflection

Slit

10.1063/1.1611271

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Citations (31)

Photorefractive effects in ZnO nanorod doped liquid crystal cell

Applied Optics (2011)

Yubing Guo Yonghai Chen Ying Xiang Shengchun Qu Zhanguo Wang

In a forced light scattering experiment, after the diffraction efficiency arrives to a stable state, both direct current (DC) voltage and two writing beams are turned off, and then by reapplication of the DC voltage we observed a peak. We provide an explanation based on periodically changed anchoring energy and also discuss the evolution of diffraction efficiency under different grating constants, laser polarization, and the direction of the optical axis of a liquid crystal cell. Experiment results show that photo-introduced charge density is nearly in proportion to the intensity of writing beams.

Diffraction efficiency

Nanorod

Light intensity

10.1364/ao.50.001101

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Observation of spin-polarized photoconductivity in (Ga,Mn)As/GaAs heterojunction without magnetic field

Scientific Reports (2017)

Qing Wu Yu Liu Hailong Wang Yuan Li Wei Huang

In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excite unequal spin polarized carriers in GaAs layer, and (iii) (Ga,Mn)As as the spin filter layer for spin transport from GaAs to (Ga,Mn)As. Different from the previous experiments, the influence coming from the Zeeman splitting induced by an external magnetic field can be avoided here. While temperature dependence experiment indicates that the SPD-PC is mixed with the magnetic uncorrelated signals, which may come from current induced spin polarization.

Photoconductivity

10.1038/srep40558

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Citations (2)

Growth of c-oriented ZnO films on (001) substrates by MOCVD

Journal of Crystal Growth (2008)

Caihong Jia Yonghai Chen Genhua Liu Xianglin Liu Shaoyan Yang

Blueshift

10.1016/j.jcrysgro.2008.10.017

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Citations (20)