Yong Suk Park

Samsung (South Korea)

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Ca V. Phan

Ho Chi Minh City University of Technology and Education

Chan Hong

Lehigh University

Jeong Hyun Kim

LG (South Korea)

Eui Yeol Oh

LG (South Korea)

Jeong Geun Kim

Chonnam National University

Jung Kee Yoon

Vatech (South Korea)

Hyo Hyun Choi

Inha Technical College

Kyu Yeol Lee

Kyung Hee University

Cooperative Institutions

LG (South Korea)

Kyung Hee University

LG (United States)

Yonsei University

Ho Chi Minh City University of Technology and Education

Ho Chi Minh City University of Technology

Ho Chi Minh City University of Social Sciences and Humanities

Concordia University

Lehigh University

University of California, Irvine

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A Location-Aware Routing with Hole Detouring Technique for Wireless Sensor Networks

IEICE Transactions on Communications (2011)

Yong Suk Park Kyu Yeol Lee Ca V. Phan Hyo Hyun Choi Jeong Geun Kim

We propose a geographic forwarding protocol for wireless sensor networks (WSNs). Our proposed protocol, named Landmark-based Location-Aware Routing (LLAR), intelligently combines greedy forwarding and a hole detouring technique utilizing landmark information. Compared to existing approaches, our proposal utilizes the feedback message from the sink node for discovery of the optimal path. Simulations show that our proposed scheme can eliminate a significant number of overhead messages compared to its counterparts, thereby further achieving higher energy efficiency.

Landmark

Geographic routing

Sink (geography)

10.1587/transcom.e94.b.827

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Threshold voltage shift of amorphous silicon thin film transistors with atmospheric pressure chemical vapor deposition silicon dioxide

Applied Physics Letters (1994)

Jeong Hyun Kim Eui Yeol Oh Jung Kee Yoon Yong Suk Park Chan Hong

The threshold voltage (Vth) shift of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) have been investigated for the atmospheric pressure chemical vapor deposition (APCVD) silicon dioxide (SiO2) gate insulator. For both positive and negative gate bias stress, the threshold voltage was shifted in the positive direction and was dominated by the defect creation near the a-Si:H/SiO2 interface. There was little charge trapping into the APCVD SiO2 gate insulator under the gate bias stress. For the positive gate bias stress, the threshold voltage shifts of a-Si:H TFTs with the a-Si:H/SiO2 interface were smaller than those of the conventional a-Si:H TFTs with the a-Si:H/SiNx interface.

Silicon dioxide

10.1063/1.111615

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Citations (2)