N. Feilchenfeld

GlobalFoundries (United States)

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J. Dunn

IBM (United States)

L. Lanzerotti

GlobalFoundries (United States)

Alvin Joseph

Indian Institute of Science Education and Research Thiruvananthapuram

M. Zierak

IBM (United States)

S. St Onge

IBM (United States)

D.L. Harame

SUNY Polytechnic Institute

Douglas Coolbaugh

SUNY Polytechnic Institute

Steven H. Voldman

AdventHealth Lake Placid

Andy Stricker

GlobalFoundries (United States)

D. Hershberger

IBM (United States)

Cooperative Institutions

IBM (United States)

156

GlobalFoundries (United States)

IBM Research - Thomas J. Watson Research Center

Essex Westford School District

AMS (Austria)

Analog Devices (United States)

Georgia Institute of Technology

University of Illinois Urbana-Champaign

Institute of Electrical and Electronics Engineers

AMS (Slovenia)

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Electrostatic discharge (ESD) protection of giant magneto-resistive (GMR) recording heads with a silicon germanium technology

Electrical Overstress/Electrostatic Discharge Symposium (2004)

Steven H. Voldman Sam Luo Calvin Nomura Kevin Vannorsdel N. Feilchenfeld

Experimental studies on the ESD protection were completed on advanced magnetic recording giant magneto-resistive heads using a BiCMOS silicon germanium technology for the first time. SiGe-based active and passive elements, such as isolated MOSFETs, varactors and Schottky diodes were used to evaluate the influence of turn-on voltage on the protection levels.

Resistive touchscreen

Magneto

Silicon-germanium

BiCMOS

10.1109/eosesd.2004.5272583

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Citations (14)

Monolithic Silicon Photonic WDM Transceivers

Jessie Rosenberg Folkert Horst Marwan Khater Frederick G Anderson Robert Leidy

Monolithic silicon photonic technology provides high bandwidth and large volume for datacom applications, while maintaining the low-cost assembly and waferscale test readiness characteristic of CMOS. Monolithic integration and high-yield CMOS processing enables complex, high-performance WDM architectures for CWDM4 transceivers.

Transceiver

10.1109/ecoc.2017.8346134

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Citations (4)

SiGe BiCMOS Trends ¿Today and Tomorrow

J. Dunn D.L. Harame Alvin Joseph S. St Onge N. Feilchenfeld

High performance communications applications have made technology choices more important than ever. Silicon germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capability, compared to III-V solutions and, relative to RFCMOS, one can attain better time to market. BiCMOS integration approaches for high performance and cost performance NPN modules and state of the art passive elements are discussed as well as future technology directions

BiCMOS

Silicon-germanium

10.1109/cicc.2006.320882

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Citations (8)

Silicon photonics and challenges for fabrication

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2017)

N. Feilchenfeld Karen Nummy Tymon Barwicz D. M. Gill E. Kiewra

Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.

Waveguide

Hybrid silicon laser

10.1117/12.2263472

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Citations (18)

High Performance, Low Complexity Vertical PNP BJT Optimization for a 0.24 μm SiGe BiCMOS Technology

Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (2007)

B. Voegeli P. Gray M. Dahlstrǒm N. Feilchenfeld B.A. Rainey

An isolated vertical PNP BJT with f _T of 28 GHz and f _MAX of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors' knowledge, the highest f _T ever published for a homojunction PNP device, as well as for a modular PNP in a BiCMOS technology. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT

Homojunction

Heterojunction bipolar transistor

BiCMOS

Silicon-germanium

Complement

10.1109/smic.2007.322774

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Citations (0)

High performance, low complexity vertical PNP BJT integrated in a 0.18μm SiGe BiCMOS technology

B. Voegeli Peter Gray B.A. Rainey Andy Stricker N. Feilchenfeld

An isolated vertical PNP BJT with f/sub T/ and f/sub MAX/ of 20GHz available as a modular component in a 0.18/spl mu/m SiGe BiCMOS technology is described. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT.

Heterojunction bipolar transistor

BiCMOS

Silicon-germanium

Complement

10.1109/bipol.2005.1555218

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Citations (2)

The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness

Steven H. Voldman E. Gebreselasic L. Lanzerotti Thomas Kronborg N. Feilchenfeld

This paper demonstrates the effect of a new low-cost oxide filled trench isolation structure, and implanted sub-collectors, on the latchup robustness. With scaling and focus on low-cost wireless technology, new technologies are being developed utilizing a shallower oxide-filled trench structure and low-doped implanted sub-collectors. In this paper, the first latchup measurements and corresponding new discoveries are shown, utilizing this new isolation structure and its integration with implanted sub-collectors. This paper compares latchup measurements with the base CMOS technology (e.g. standard dual well p-substrate base technology) to quantify the net improvement. The results are shown with trench isolation only, sub-collector only, and the combined effect of the trench isolation and sub-collector.

Robustness

Shallow trench isolation

Isolation

Silicon dioxide

10.1109/relphy.2005.1493072

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Citations (18)

無線回路用の高性能で複雑さの少ない0.18μm SiGe BiCMOS技術

Bipolar/BiCMOS Circuits and Technology Meeting (2002)

N. Feilchenfeld L. Lanzerotti David Sheridan R. Wuthrich E. Eshun

BiCMOS

Silicon-germanium

Source

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Citations (0)

Applications Focused Trends In SiGe BiCMOS Technologies

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2006)

Stephen St.Onge Alvin Joseph L. Lanzerotti N. Feilchenfeld Douglas Coolbaugh

Abstract not Available.

BiCMOS

Silicon-germanium

10.1149/ma2005-01/15/702

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Citations (0)

Drift design impact on quasi-saturation & HCI for scalable N-LDMOS

Yun Shi N. Feilchenfeld Rick Phelps Max Levy M. Knaipp

In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f _T characteristics. The STI depth sensitivity in DC, ac and HCI characteristics is investigated. The results prove a very robust design, featuring <;10% I _dlin shift over 10 year lifetime for +/-10% STI depth variations.

LDMOS

Saturation (graph theory)

10.1109/ispsd.2011.5890829

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Citations (6)