Toshiki Mii

Nagoya Institute of Technology

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Masashi Kato

Nagoya Institute of Technology

Shunta Harada

Nagoya University

Hitoshi Sakane

K. Tsuzuki

National Institute of Technology, Toyota College

Takehiko Tsukamoto

National Institute of Technology, Toyota College

Hiromi Tanaka

National Institute of Technology, Yonago College

Hiroya Andoh

National Institute of Technology, Toyota College

Ohga Watanabe

Nagoya Institute of Technology

Dai Oikawa

National Institute of Technology, Toyota College

Toko Sugiura

National Institute of Technology, Toyota College

Cooperative Institutions

National Institute of Technology, Toyota College

Nagoya University

NTL Institute for Applied Behavioral Science

IBM (United States)

Nagoya Institute of Technology

Utsunomiya University

GlobalFoundries (United States)

Essex Westford School District

The University of Tokyo

Tokyo University of Science

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation

Materials Science in Semiconductor Processing (2022)

Toshiki Mii Hitoshi Sakane Shunta Harada Masashi Kato

Degradation

10.1016/j.mssp.2022.107126

Cite

Citations (10)

Flux effect of Grown Bi2212 Single Crystal by using Flux Melting Method

The Japan Society of Applied Physics (2020)

Dai Oikawa Hiromi Tanaka Toshiki Mii Yuki Mizutani K. Tsuzuki

Flux method

Source

Cite

Citations (0)

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Scientific Reports (2022)

Masashi Kato Ohga Watanabe Toshiki Mii Hitoshi Sakane Shunta Harada

4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking-faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current-voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

Stacking fault

PIN diode

Degradation

10.1038/s41598-022-23691-y

Cite

Citations (17)

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Scientific Reports (2022)

Shunta Harada Toshiki Mii Hitoshi Sakane Masashi Kato

SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 1011 cm-2 without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.

Stacking fault

Passivation

10.1038/s41598-022-17060-y

Cite

Citations (20)

Flux Effect of Grown Bi2212 Single Crystal using Self Flux Melting Method

The Japan Society of Applied Physics (2019)

Toshiki Mii Dai Oikawa Hiromi Tanaka K. Tsuzuki Hiroya Andoh

Flux method

Crystal (programming language)

Source

Cite

Citations (0)

First Experimental Verification of Collection Length Limited Gate Induced Drain Leakage

Toshiki Mii R. Kleinheiiz W. Noble J. Johnson A. Bryant

Leakage (economics)

Source

Cite

Citations (0)

Carrier lifetime of a drift layer for suppression of bipolar degradation in 4H-SiC

The Japan Society of Applied Physics (2021)

Toshiki Mii Masashi Kato

Degradation

Source

Cite

Citations (0)

Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation

Applied Physics Express (2023)

Shunta Harada Hitoshi Sakane Toshiki Mii Masashi Kato

Abstract Bipolar degradation in SiC bipolar devices, in which stacking faults (SFs) expand to accommodate the movement of partial dislocations during forward bias application, is one of the critical problems impeding the widespread implementation of SiC power devices. Here we clearly demonstrate that the movement of partial dislocations can be suppressed by proton implantation, which has good compatibility with semiconductor processing, through investigation of the contraction behavior of SFs in SiC epitaxial layers subjected to proton implantation.

Stacking fault

10.35848/1882-0786/acb585

Cite

Citations (9)

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Research Square (Research Square) (2022)

Masashi Kato Ohga Watanabe Toshiki Mii Hitoshi Sakane Shunta Harada

Abstract 4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

Stacking fault

PIN diode

Degradation

10.21203/rs.3.rs-1982635/v1

Cite

Citations (1)